BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value Unit 30 V Forward Continuous Current Ta = 25 °C 200 mA IFRM Repetitive Peak Fordware Current tp ≤ 1s δ ≤ 0.5 500 mA IFSM Surge non Repetitive Forward Current* tp = 10ms 4 A Ptot Power Dissipation* Tl = 65 °C 200 mW Tstg Tj Storage and Junction Temperature Range - 65 to +150 - 65 to +125 °C °C TL Maximum Temperature for Soldering during 10s at 4mm from Case 230 °C Value Unit 300 °C/W IF THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/4 BAT 42/BAT 43 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Tj = 25°C IR = 100µA V F* Tj = 25°C IF = 200mA All Types Tj = 25°C IF = 10mA BAT 42 Tj = 25°C IF = 50mA Tj = 25°C IF = 2mA Tj = 25°C IF = 15mA IR* Typ. Max. 30 V BR Unit V 1 V 0.4 0.65 BAT 43 0.26 0.33 0.45 VR = 25V Tj = 25°C 0.5 µA 100 Tj = 100°C DYNAMIC CHARACTERISTICS Symbol Test Conditions Typ. Max. 7 C Tj = 25°C VR = 1V f = 1MHz trr Tj = 25°C IF = 10mA IR = 10mA h Tj = 25°C RL = 15KΩ C L = 300pF f = 45MHz Vi = 2V * Pulse test: tp ≤ 300µs irr = 1mA RL = 100Ω pF 5 80 Unit ns % δ < 2%. Figure 1. Forward current versus forward voltage at different temperatures (typical values). 2/4 Min. Figure 2. Forward current versus forward voltage (typical values). BAT 42/BAT 43 Figure 3. Reverse current versus junction temperature (typical values). Figure 4. Reverse current versus continuous reverse voltage. Figure 5. Capacitance C versus reverse applied voltage VR (typical values). 3/4 BAT 42/BAT 43 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS B A note 1 E B O /C REF. O /D note 2 Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 B 1.53 2.00 0.060 0.079 E note 1 O /D Millimeters C 12.7 D 0.458 0.500 0.558 0.018 0.022 Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4