STMICROELECTRONICS BUH515

BUH515

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■
SWITCH MODE POWER SUPPLIES
3
2
1
DESCRIPTION
The BUH515 is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (I E = 0)
1500
V
V CEO
Collector-Emitter Voltage (IB = 0)
700
V
V EBO
Emitter-Base Voltage (IC = 0)
10
V
8
A
IC
I CM
IB
Parameter
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
I BM
Base Peak Current (tp < 5 ms)
P t ot
Total Dissipation at Tc = 25 C
T stg
St orage Temperature
Tj
o
Max. Operating Junction Temperature
November 1999
12
A
5
A
8
A
50
W
-65 to 150
o
C
150
o
C
1/7
BUH515
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
2.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I EBO
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ .
o
Tj = 125 C
Max.
Un it
0.2
2
mA
mA
100
µA
I C = 100 mA
700
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
10
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 5 A
I B = 1.25 A
1.5
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
IC = 5 A
I B = 1.25 A
1.3
V
DC Current Gain
IC = 5 A
IC = 5 A
V CE = 5 V
V CE = 5 V
V EBO
h F E∗
T j = 100 oC
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
V CC = 400 V
I B1 = 1.25 A
IC = 5 A
IB2 = 2.5 A
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 5 A
I B1 = 1.25 A
f = 15625 Hz
IB2 = -1.5 A
π

V c eflybac k = 1050 sin  106 t V
5


ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
I C = 5A
I B1 = 1.25 A
f = 31250 Hz
IB2 = -1.5 A
 π 6
V c eflybac k = 1200 sin  10  t
5

2/7
12
2.7
190
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
6
4
Thermal Impedance
3.9
280
µs
ns
2.3
350
µs
ns
2.3
200
µs
ns
BUH515
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz
(see figure 2)
3/7
BUH515
Power Losses at 32 KHz
Switching Time Inductive Load at 32 KHz
(see figure 2)
Reverse Biased SOA
Switching Time Resistive Load
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB2 at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
4/7
figure 1.
Inductance L 1 serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
1
1
L (IC)2 = C (VCEfly)2
ω = 2 πf =
2
2

√
L C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUH515
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH515
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
3.7
0.138
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
6/7
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
BUH515
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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