BUL1203EFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING (277 V HALF BRIDGE AND 120 V PUSH-PULL TOPOLOGIES) 3 ■ DESCRIPTION The BUL1203EFP is a new device manufactured using Diffused Collector technology to enhance switching speeds and tight h FE range while maintaining a wide RBSOA. Thanks to his structure it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during Breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-BaseVoltage (I E = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature November 2003 Value 1200 1200 550 9 5 8 2 4 36 1500 -65 to 150 150 Unit V V V V A A A A W V o o C C 1/7 BUL1203EFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.47 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 1200 V 100 µA I CEO Collector Cut-off Current (I B = 0) V CE = 550 V 100 µA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 100 mA L = 25 mH Min. Typ. 550 V 9 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A IB = 1 A 0.5 0.7 1.5 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 3 A I B = 0.4 A IB = 1 A 1.5 1.5 V V DC Current Gain IC IC IC IC V CE = 5 V V CE = 5 V V CE = 3 V V CE = 5 V V EBO h FE ∗ t on ts tf E ar = = = = 1 mA 10 mA 0.8 A 2A RESISTIVE LOAD Turn-on Time Storage Time Fall Time IC = 2 A I B2 = -0.8 A V CC = 150 V I B1 = 0.4 A tp = 30 µs (see figure 2) Repetitive Avalanche Energy L = 2 mH V CC = 50 V (see figure 3) C = 1.8 nF V BE = -5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/7 Derating Curve 10 10 14 9 32 28 2.5 0.2 6 0.5 3.0 0.3 µs µs µs mJ BUL1203EFP DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Inductive Load Storage Time Inductive Load Fall Time 3/7 BUL1203EFP Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit Figure 2: Resistive Load Switching Test Circuit 4/7 BUL1203EFP Figure 3: Energy Rating Test Circuit 5/7 BUL1203EFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 6/7 L4 BUL1203EFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7