STMICROELECTRONICS BUW1015

BUW1015
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY (> 1500 V)
VERY HIGH SWITCHING SPEED
APPLICATIONS:
HORIZONTAL DEFLECTION FOR HIGH-END
COLOUR TV AND 19" MONITORS
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3
DESCRIPTION
The
BUW1015
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
1500
V
700
V
V CBO
Collector-Base Voltage (I E = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
10
V
Collector Current
14
A
Collector Peak Current (t p < 5 ms)
18
A
8
A
IC
I CM
IB
Base Current
IBM
Base Peak Current (t p < 5 ms)
11
A
Ptot
Total Dissipation at T c = 25 o C
160
W
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
February 2002
-65 to 150
o
C
150
o
C
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BUW1015
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
0.78
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
IEBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ.
T j = 125 o C
I C = 100 mA
Max.
Unit
0.2
2
mA
mA
100
µA
700
V
10
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
VCE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 10 A
IB = 2 A
1.5
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 10 A
IB = 2 A
1.5
V
DC Current Gain
I C = 10 A
I C = 10 A
V CE = 5 V
V CE = 5 V
V EBO
h FE ∗
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
V CC = 400 V
I B1 = 2 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 10 A
I B1 = 2 A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 6 A
f = 64 KHz
I B1 = 1 A
V beoff = - 2 V
π

V ceflyback = 1100 sin  106 t
5


V ceflyback
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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T j = 100 o C
IC = 10 A
I B2 = -6 A
f = 31250 Hz
I B2 = -6 A
π

= 1200 sin  106 t V
5


V
7
5
10
14
1.5
110
µs
ns
4
220
µs
ns
3.7
200
µs
ns
BUW1015
Safe Operating Area
Thermal Impedance
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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BUW1015
Power Losses at 64 KHz
Switching Time Inductive Load at 64KHz
(see figure 2)
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at Tj
= 100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistor to turn off (retrace phase). Most of the
dissipation,
especially
in
the
deflection
application, occurs at switch-off so it is essential
to determine the value of IB2 which minimizes
power losses, fall time tf and, consequently, Tj. A
new set of curves have been defined to give total
power losses, ts and tf as a function of IB1 at 64
KHz scanning frequencies for choosing the
4/7
optimum drive. The test circuit is illustrated in
figure 1.
The values of L and C are calculated from the
following equations:
1
1
L (IC)2 = C (VCEfly)2
2
2
1
ω = 2 πf =
L C

√
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUW1015
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Switching Waveforms in a Deflection Circuit
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BUW1015
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
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BUW1015
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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