STMICROELECTRONICS BUL1203E

BUL1203E
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
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DESCRIPTION
The BUL1203E is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h FE range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-BaseVoltage (I E = 0)
1200
V
1200
V
550
V
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
5
A
Collector Peak Current (t p < 5 ms)
8
A
IC
I CM
Base Current
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P tot
Total Dissipation at T c = 25 o C
100
IB
T stg
Tj
Storage Temperature
Max. Operating Junction Temperature
December 2003
W
-65 to 150
o
C
150
o
C
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BUL1203E
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.25
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1200 V
100
µA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 550 V
100
µA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
L = 25 mH
550
V
9
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
I B = 0.2 A
I B = 0.4 A
IB = 1 A
0.5
0.7
1.5
V
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 2 A
IC = 3 A
I B = 0.4 A
IB = 1 A
1.5
1.5
V
V
DC Current Gain
IC
IC
IC
IC
V CE = 5 V
V CE = 5 V
V CE = 3 V
V CE = 5 V
V EBO
h FE ∗
t on
ts
tf
E ar
=
=
=
=
1 mA
10 mA
0.8 A
2A
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
IC = 2 A
I B2 = -0.8 A
V CC = 150 V
I B1 = 0.4 A
tp = 30 µs
(see figure 2)
Repetitive Avalanche
Energy
L = 2 mH
V CC = 50 V
(see figure 3)
C = 1.8 nF
V BE = -5 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/7
Derating Curve
10
10
14
9
32
28
2.5
0.2
6
0.5
3.0
0.3
µs
µs
µs
mJ
BUL1203E
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Load Storage Time
Inductive Load Fall Time
3/7
BUL1203E
Reverse Biased Safe Operating Area
Figure 1: Inductive Load Switching Test Circuit
Figure 2: Resistive Load Switching Test Circuit
4/7
BUL1203E
Figure 3: Energy Rating Test Circuit
5/7
BUL1203E
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
6/7
BUL1203E
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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