ST2009DHI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TVS 1 ISOWATT218 DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM RBE =35 Ω Typ. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB 1500 V 600 V 7 V 10 A Collector Peak Current (t p < 5 ms) 20 A 7 A 55 W 2500 V Base Current Total Dissipation at T c = 25 o C V isol Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Tj Unit Collector Current P tot T stg Value Max. Operating Junction Temperature December 2002 -65 to 150 o C 150 o C 1/6 ST2009DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 2 mA mA 210 mA I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A I B = 1.25 A 1.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A I B = 1.25 A 1.2 V DC Current Gain IC = 1 A IC = 5 A I C = 5.5 A V CE = 5 V V CE = 1 V V CE = 5 V h FE ∗ VF Diode Forward Voltage IF = 5 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A L BB(off ) = 2 µH f = 32 KHz TC = 125 o C 70 I Bon(END) = 1 A V BE(off) = -2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 Thermal Impedance 20 5 9 5 1.5 2 V 2.6 0.28 3.2 0.55 µs µs ST2009DHI Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain DC Current Gain 3/6 ST2009DHI Power Losses RBSOA Figure 1: Inductive Load Switching Test Circuit. 4/6 Switching Time Inductive Load ST2009DHI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 mm TYP. 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 0.425 0.622 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/B 5/6 ST2009DHI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6