BULB49D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BULB49DT4 ■ ■ ■ ■ ■ ■ Marking BULB49D Package / Shipment D2PAK / Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS SURFACE MOUNTING TO-263 (D 2PAK) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 TO-263 D2PAK (Suffix ”T4”) APPLICATIONS: ■ ■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BULB49D is designed for use in electronic transformers for halogen lamps. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 850 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms) V(BR)EBO V Collector Current 5 A Collector Peak Current (tp < 5 ms) 10 A Base Current 2 A IBM Base Peak Current (tp < 5 ms) 4 A Ptot Total Dissipation at Tc = 25 °C 80 W Tstg Storage Temperature –65 to 150 °C 150 °C IC ICM IB Tj Max. Operating Junction Temperature September 2003 1/7 BULB49D THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Collector Cut-off Current (VBE = 0) VCE = 850 V VCE = 850 V Emitter Cut-off Current (IC = 0) VEB = 9 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 mA 10 VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 10 mA 450 VCE(sat)* Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 4 A IB = 0.2 A IB = 0.4 A IB = 0.8 A VBE(sat)* Base-Emitter Saturation Voltage IC = 1 A IC = 4 A IB = 0.2 A IB = 0.8 A DC Current Gain IC = 10 mA IC = 500 mA IC = 7 A VCE = 5 V VCE = 5 V VCE = 10 V 10 Maximum CollectorEmitter Voltage Whithout Snubber IC = 8 A L = 50 µH tp = 10 µs VBB = -2.5 V RBB = 0 450 RESISTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = -IB2 = 400 mA (See Figure 1) VCC = 250 V ts tf ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4 A IB(on) = 800 mA VBE(off) = -5 V (See Figure 2) VCL = 300 V RBB(off) = 0 L = 1 mH Vf Diode Forward Voltage IC = 3 A ICES IEBO hFE* VCEW* * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/7 Typ. Tj = 125 °C Max. Unit 100 500 µA µA 100 µA 18 V V 0.1 0.3 0.6 1.2 V V V 1 1.3 V V 60 10 4 V 2 0.6 50 3 0.8 µs ns 1.3 100 µs ns 1.5 V BULB49D Safe Operating Area Derating Curve Output Characteristics Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain 3/7 BULB49D DC Current Gain Inductive Load Storage Time Inductive Load Fall Time Reverse Biased Safe Operating Area 4/7 BULB49D Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 5/7 BULB49D TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. TYP. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.036 B2 1.14 1.70 0.044 0.067 C 0.45 0.60 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8.00 10.00 E1 0.368 0.315 10.40 0.393 8.50 0.409 0.334 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.40 1.75 0.055 0.068 M 2.40 3.2 0.094 0.126 8o 0o R V2 0.40 0o - Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 µm 6/7 inch MAX. 0.016 8o P011P6/G BULB49D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 7/7