BUL38D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC HIGH RUGGEDNESS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 1 2 TO-220 APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 800 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC I CM IB Parameter Collector Current Collector Peak Current (t p <5 ms) 5 V 10 A Base Current 2 A I BM Base Peak Current (t p <5 ms) 4 A P tot o Total Dissipation at Tc = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature February 2003 80 W -65 to 150 o C 150 o C 1/7 BUL38D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V I CEO Collector Cut-off Current (I B = 0) V CE = 450 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA Min. Typ. T c = 125 o C L = 25 mH Max. Unit 100 500 µA µA 250 µA 450 V 9 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.75 A 0.5 0.7 1.1 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A I B = 0.2 A I B = 0.4 A 1.1 1.2 V V DC Current Gain I C = 10 mA I C = 0.5 A IC = 2 A Group A Group B V CE = 5 V V CE = 5 V V CE = 5 V V CC = 150 V t p = 30 µs V EBO h FE ∗ ts tf RESISTIVE LOAD Storage Time Fall Time I C = 2.5 A I B1 = -IB2 = 0.5 A (see figure 2) ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V (see figure 1) I B1 = 0.4 A R BB = 0 Ω L = 200 µH ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V T c = 125 o C I B1 = 0.4 A R BB = 0 Ω L = 200 µH (see figure 1) Vf Diode Forward Voltage IC = 2 A 10 60 13 22 23 32 1.0 2.2 0.8 µs µs 1.8 100 µs ns 1 55 µs ns 1.3 100 1.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/7 V BUL38D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 BUL38D Inductive Load Storage Time Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/7 Inductive Load Fall Time BUL38D Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL38D TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 6/7 BUL38D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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