ST83003 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST93003, its complementary PNP transistor. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage o (I C = 0, I B = 0.75 A, tp < 10µs, T j < 150 C) Collector Current IC I CM Collector Peak Current (t p < 5 ms) Unit 700 V 400 V V (BR)EBO V 1.5 A 3 A 0.75 A I BM Base Peak Current (t p < 5 ms) 1.5 A P tot Total Dissipation at T c = 25 o C 40 IB T stg Tj Base Current Value Storage Temperature Max. Operating Junction Temperature October 2002 W -65 to 150 o C 150 o C 1/7 ST83003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 89 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV V (BR)EBO Parameter Test Conditions Min. Collector Cut-off Current (V BE = -1.5V) V CE = 700V V CE = 700V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 mA 12 I C = 10 mA L = 25 mH 400 V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Typ. T j = 125 o C Max. Unit 1 5 mA mA 18 V V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 0.5 A I C = 0.35 A I B = 0.1 A I B = 50 mA 0.5 1 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 0.5 A I B = 0.1 A 1 V DC Current Gain I C = 10 mA I C = 0.35 A IC = 1 A V CE = 5 V V CE = 5 V V CE = 5 V 10 16 4 25 32 V CC = 125 V I B2 = -70 mA (see figure 2) 1.5 100 2.2 0.2 2.9 h FE ∗ tr ts tf RESISTIVE LOAD Rise Time Storage Time Fall Time I C = 0.35 A I B1 = 70 mA T p ≥ 25 µs ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 0.5 A V BE(off) = -5 V V clamp = 300 V ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/7 I B1 = 0.1 A L = 10 mH (see figure 1) 450 90 ns µs µs ns ns ST83003 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST83003 Resistive Load Fall Time Resistive Load Storage Time Inductive Load Fall Time Inductive Load Storage Time Reverse Biased SOA 4/7 ST83003 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 ST83003 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 6/7 ST83003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7