STMICROELECTRONICS ST83003

ST83003
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
■
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The ST83003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the ST93003, its
complementary PNP transistor.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage
o
(I C = 0, I B = 0.75 A, tp < 10µs, T j < 150 C)
Collector Current
IC
I CM
Collector Peak Current (t p < 5 ms)
Unit
700
V
400
V
V (BR)EBO
V
1.5
A
3
A
0.75
A
I BM
Base Peak Current (t p < 5 ms)
1.5
A
P tot
Total Dissipation at T c = 25 o C
40
IB
T stg
Tj
Base Current
Value
Storage Temperature
Max. Operating Junction Temperature
October 2002
W
-65 to 150
o
C
150
o
C
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ST83003
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
3.12
89
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CEV
V (BR)EBO
Parameter
Test Conditions
Min.
Collector Cut-off
Current (V BE = -1.5V)
V CE = 700V
V CE = 700V
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 mA
12
I C = 10 mA
L = 25 mH
400
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Typ.
T j = 125 o C
Max.
Unit
1
5
mA
mA
18
V
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.5 A
I C = 0.35 A
I B = 0.1 A
I B = 50 mA
0.5
1
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.5 A
I B = 0.1 A
1
V
DC Current Gain
I C = 10 mA
I C = 0.35 A
IC = 1 A
V CE = 5 V
V CE = 5 V
V CE = 5 V
10
16
4
25
32
V CC = 125 V
I B2 = -70 mA
(see figure 2)
1.5
100
2.2
0.2
2.9
h FE ∗
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I C = 0.35 A
I B1 = 70 mA
T p ≥ 25 µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 0.5 A
V BE(off) = -5 V
V clamp = 300 V
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
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I B1 = 0.1 A
L = 10 mH
(see figure 1)
450
90
ns
µs
µs
ns
ns
ST83003
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
ST83003
Resistive Load Fall Time
Resistive Load Storage Time
Inductive Load Fall Time
Inductive Load Storage Time
Reverse Biased SOA
4/7
ST83003
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
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ST83003
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.425
b
0.7
0.9
0.028
0.035
b1
0.40
0.65
0.015
0.025
C
2.4
2.7
0.094
0.106
c1
1.0
1.3
0.039
0.051
D
15.4
16.0
0.606
0.630
e
2.2
0.087
e3
4.4
0.173
F
G
3.8
3
0.150
3.2
H
0.118
0.126
2.54
0.100
H2
2.15
0.084
I
1.27
0.05
O
0.3
0.011
V
o
10
10o
1: Base
2: Collector
3: Emitter
0016114/B
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ST83003
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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