STMICROELECTRONICS STX13005-AP

STX13005
STX13005-AP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code
STX13005
STX13005-AP
■
■
■
■
Marking
X13005
X13005
Shipment
Bulk
Ammopack
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
■
COMPACT FLUORESCENT LAMPS (CFLS)
SWITCH MODE POWER SUPPLIES (AC / DC
CONVERTERS)
TO-92
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
700
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0, IB < 1.5 A, tp < 10 ms)
IC
ICM
IB
V(BR)EBO
V
Collector Current
3
A
Collector Peak Current (tp < 5 ms)
6
A
1.5
A
3
A
Base Current
IBM
Base Peak Current (tp < 5 ms)
Ptot
Total Dissipation at Tc = 25 °C
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
November 2002
2.8
W
–65 to 150
°C
150
°C
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STX13005 / STX13005-AP
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
44.6
150
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1
5
mA
mA
1
mA
18
V
Collector Cut-off
Current (VBE = 0)
VCE = 700 V
VCE = 700 V
Collector Cut-off
Current (IB = 0)
VCE = 400 V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 mA
9
VCEO(sus)*
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
400
VCE(sat)*
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 3 A
IB = 200 mA
IB = 500 mA
IB = 750 mA
0.5
0.6
5
V
V
V
VBE(sat)*
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IB = 200 mA
IB = 500 mA
1.2
1.6
V
V
DC Current Gain
IC = 1 A
IC = 2 A
VCE = 5 V
VCE = 5 V
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = -IB2 = 400 mA
(See Figure 1)
VCC = 125 V
tp = 30 µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
IB1 = 200 mA
L = 50 mH
(See Figure 2)
Vclamp = 300 V
VBE(off) = -5 V
RBB = 0
ICES
ICEO
hFE*
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
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Tj = 100 °C
V
10
8
30
24
1.65
260
µs
ns
0.8
150
µs
ns
STX13005 / STX13005-AP
Safe Operating Area
Derating Curve
Output Characteristics
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
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STX13005 / STX13005-AP
Base-Emitter Saturation Voltage
Resistive Load Storage Time
Resistive Load Fall Time
Inductive Load Storage Time
Inductive Load Fall Time
Reverse Biased Safe Operating Area
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STX13005 / STX13005-AP
Figure 1: Resistive Load Switching Test Circuit
1) Fast Electronic Switch
2) Non-Inductive Resistor
Figure 2: Inductive Load Switching Test Circuit
1) Fast Electronic Switch
2) Non-Inductive Resistor
3) Fast Recovery Rectifier
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STX13005 / STX13005-AP
TO-92 BULK SHIPMENT MECHANICAL DATA
mm.
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.195
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.195
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.095
0.105
e1
1.14
1.40
0.045
0.055
L
12.70
15.49
0.500
0.610
R
2.16
2.41
0.085
0.095
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
0.022
V
6/8
TYP.
5°
5°
STX13005 / STX13005-AP
TO-92 AMMOPACK SHIPMENT (Suffix “-AP”) MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A1
4.80
0.189
T
3.80
0.150
T1
1.60
0.063
T2
2.30
0.091
d
0.48
0.019
P0
12.50
12.70
12.90
0.492
0.500
0.508
P2
5.65
6.35
7.05
0.222
0.250
0.278
F1, F2
2.44
2.54
2.94
0.096
0.100
0.116
delta H
-2.00
2.00
-0.079
0.079
W
17.50
18.00
19.00
0.689
0.709
0.748
W0
5.70
6.00
6.30
0.224
0.236
0.248
W1
8.50
9.00
9.25
0.335
0.354
W2
0.50
H
18.50
H0
15.50
16.00
H1
D0
20.50
0.728
16.50
0.610
0.807
0.630
25.00
3.80
4.00
4.20
0.364
0.020
0.650
0.984
0.150
0.157
0.165
t
0.90
0.035
L
11.00
0.433
l1
3.00
delta P
-1.00
0.118
1.00
-0.039
0.039
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STX13005 / STX13005-AP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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