STX13005 STX13005-AP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STX13005 STX13005-AP ■ ■ ■ ■ Marking X13005 X13005 Shipment Bulk Ammopack HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ■ COMPACT FLUORESCENT LAMPS (CFLS) SWITCH MODE POWER SUPPLIES (AC / DC CONVERTERS) TO-92 DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0, IB < 1.5 A, tp < 10 ms) IC ICM IB V(BR)EBO V Collector Current 3 A Collector Peak Current (tp < 5 ms) 6 A 1.5 A 3 A Base Current IBM Base Peak Current (tp < 5 ms) Ptot Total Dissipation at Tc = 25 °C Tstg Storage Temperature Tj Max. Operating Junction Temperature November 2002 2.8 W –65 to 150 °C 150 °C 1/8 STX13005 / STX13005-AP THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 44.6 150 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 5 mA mA 1 mA 18 V Collector Cut-off Current (VBE = 0) VCE = 700 V VCE = 700 V Collector Cut-off Current (IB = 0) VCE = 400 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 mA 9 VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) IC = 10 mA 400 VCE(sat)* Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A IB = 200 mA IB = 500 mA IB = 750 mA 0.5 0.6 5 V V V VBE(sat)* Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IB = 200 mA IB = 500 mA 1.2 1.6 V V DC Current Gain IC = 1 A IC = 2 A VCE = 5 V VCE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time IC = 2 A IB1 = -IB2 = 400 mA (See Figure 1) VCC = 125 V tp = 30 µs ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 1 A IB1 = 200 mA L = 50 mH (See Figure 2) Vclamp = 300 V VBE(off) = -5 V RBB = 0 ICES ICEO hFE* * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %. 2/8 Tj = 100 °C V 10 8 30 24 1.65 260 µs ns 0.8 150 µs ns STX13005 / STX13005-AP Safe Operating Area Derating Curve Output Characteristics DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage 3/8 STX13005 / STX13005-AP Base-Emitter Saturation Voltage Resistive Load Storage Time Resistive Load Fall Time Inductive Load Storage Time Inductive Load Fall Time Reverse Biased Safe Operating Area 4/8 STX13005 / STX13005-AP Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 5/8 STX13005 / STX13005-AP TO-92 BULK SHIPMENT MECHANICAL DATA mm. inch DIM. MIN. MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.195 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.610 R 2.16 2.41 0.085 0.095 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V 6/8 TYP. 5° 5° STX13005 / STX13005-AP TO-92 AMMOPACK SHIPMENT (Suffix “-AP”) MECHANICAL DATA DIM. mm. MIN. TYP. inch MAX. MIN. TYP. MAX. A1 4.80 0.189 T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091 d 0.48 0.019 P0 12.50 12.70 12.90 0.492 0.500 0.508 P2 5.65 6.35 7.05 0.222 0.250 0.278 F1, F2 2.44 2.54 2.94 0.096 0.100 0.116 delta H -2.00 2.00 -0.079 0.079 W 17.50 18.00 19.00 0.689 0.709 0.748 W0 5.70 6.00 6.30 0.224 0.236 0.248 W1 8.50 9.00 9.25 0.335 0.354 W2 0.50 H 18.50 H0 15.50 16.00 H1 D0 20.50 0.728 16.50 0.610 0.807 0.630 25.00 3.80 4.00 4.20 0.364 0.020 0.650 0.984 0.150 0.157 0.165 t 0.90 0.035 L 11.00 0.433 l1 3.00 delta P -1.00 0.118 1.00 -0.039 0.039 7/8 STX13005 / STX13005-AP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8