BUV46 BUV46A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTORS ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING ■ SWITCH MODE POWER SUPPLIES ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 3 ■ DESCRIPTION The devices are silicon Multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BUV46 Unit BUV46A V CES Collector-Emitter Voltage (V BE = 0) 850 1000 V V CEX Collector-Emitter Voltage (V BE = -2.5V) 850 1000 V V CEO Collector-Emitter Voltage (I B = 0) 400 450 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC Collector Current 5 A IB Base Current 3 A o P tot Total Dissipation at Tc = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature January 1999 70 W -65 to 150 o C 150 o C 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal Resistance Junction-Case Max o 1.76 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CER Collector Cut-off Current (R BE = 10Ω) V CE = V CEX V CE = V CEX T C = 125 o C 0.1 1 mA mA I CEX Collector Cut-off Current V CE = V CEX V BE = -2.5 V V CE = V CEX VBE = -2.5 V T C = 125 o C 0.3 2 mA I EBO Emitter Cut-off Current (I C = 0) V BE = 7 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V BE(sat) ∗ Collector-Emitter Saturation Voltage I C = 100 mA for BUV46 I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A for BUV46 for BUV46A 400 450 V V I B = 0.5 A I B = 0.7 A 1.5 5 V V I B = 0.4 A I B = 0.6 A 1.5 5 V V I B = 0.5 A 1.3 V Base-Emitter Saturation Voltage for BUV46 I C = 2.5 A for BUV46A IC = 2 A I B = 0.4 A 1.3 V t on ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time for BUV46 I C = 2.5 A I B1 = - I B2 = 0.5 A V CC = 150 V 1 3 0.8 µs µs µs t on ts tf RESISTIVE LOAD Turn-on Time Storage Time Fall Time for BUV46A IC = 2 A I B1 = - I B2 = 0.4 A V CC = 150 V 1 3 0.8 µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 Min. BUV46 / BUV46A TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BUV46 / BUV46A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4