STMICROELECTRONICS BUV46

BUV46
BUV46A
®
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
FAST SWITCHING SPEED
APPLICATIONS
GENERAL PURPOSE SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
3
■
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BUV46
Unit
BUV46A
V CES
Collector-Emitter Voltage (V BE = 0)
850
1000
V
V CEX
Collector-Emitter Voltage (V BE = -2.5V)
850
1000
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
450
V
V EBO
Emitter-Base Voltage (I C = 0)
7
V
IC
Collector Current
5
A
IB
Base Current
3
A
o
P tot
Total Dissipation at Tc = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
January 1999
70
W
-65 to 150
o
C
150
o
C
1/4
BUV46 / BUV46A
THERMAL DATA
R thj-case
Thermal Resistance Junction-Case
Max
o
1.76
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I CER
Collector Cut-off
Current (R BE = 10Ω)
V CE = V CEX
V CE = V CEX
T C = 125 o C
0.1
1
mA
mA
I CEX
Collector Cut-off
Current
V CE = V CEX
V BE = -2.5 V
V CE = V CEX VBE = -2.5 V T C = 125 o C
0.3
2
mA
I EBO
Emitter Cut-off
Current (I C = 0)
V BE = 7 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
V CE(sat) ∗
V BE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 100 mA
for BUV46
I C = 2.5 A
I C = 3.5 A
for BUV46A
IC = 2 A
IC = 3 A
for BUV46
for BUV46A
400
450
V
V
I B = 0.5 A
I B = 0.7 A
1.5
5
V
V
I B = 0.4 A
I B = 0.6 A
1.5
5
V
V
I B = 0.5 A
1.3
V
Base-Emitter
Saturation Voltage
for BUV46
I C = 2.5 A
for BUV46A
IC = 2 A
I B = 0.4 A
1.3
V
t on
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
for BUV46
I C = 2.5 A
I B1 = - I B2 = 0.5 A
V CC = 150 V
1
3
0.8
µs
µs
µs
t on
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
for BUV46A
IC = 2 A
I B1 = - I B2 = 0.4 A
V CC = 150 V
1
3
0.8
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
Min.
BUV46 / BUV46A
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
3/4
BUV46 / BUV46A
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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