BUV20 ® HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ SWITCHING REGULATORS ■ DESCRIPTION The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 (version "S") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 160 V V CER Collector-Emitter Voltage (R BE = 100Ω) 150 V V CEX Collector-Emitter Voltage (V BE = -1.5V) 160 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V IC I CM IB P tot T stg Tj Collector Current 50 A Collector Peak Current 60 A Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Junction Temperature January 2000 10 A 250 W -65 to 200 o C 200 o C 1/4 BUV20 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 3 12 mA mA I CEX Collector Cut-off Current (V BE = -1.5V) V CE = 160 V V CE = 160 V I CEO Collector Cut-off Current (I B = 0) V CE = 100 V 3 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA T case = 125 o C V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 200 mA V (BR)EB0 ∗ Emitter-base Breakdown Voltage (I C = 0) I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 25 A I C = 50 A IB = 2.5 A IB = 5 A 0.3 0.7 0.6 1.2 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 50 A IB = 5 A 1.4 2 V DC Current Gain V CE = 2 V V CE = 4 V I C = 25 A I C = 50 A fT Transition frequency V CE = 15 V IC = 2 A t on tf ts RESISTIVE LOAD Turn-on Time Fall Time Storage Time I C = 50 A IB1 = -I B2 = 5 A h FE ∗ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %. 2/4 L = 25 mH 125 V 7 V 20 10 f = 100 MHz 60 8 MHz 1.5 0.3 1.2 µs µs µs BUV20 TO-3 (version S) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 1.47 1.60 0.058 0.063 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003O 3/4 BUV20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4