BUY69A HIGH VOLTAGE NPN SILICON TRANSISTOR ■ ■ ■ ■ ■ ■ STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV ■ SWITCHING REGULATORS DESCRIPTION The BUY69A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case. It is intended for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CES Collector-Emitter Voltage (V BE = 0) 1000 V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 8 V Collector Current 10 A Collector Peak Current (tp ≤ 10 ms ) 15 A 3 A IC I CM IB Base Current o P t ot Total Dissipation at T c ≤ 25 C T stg St orage Temperature Tj June 1998 Max. Operating Junction Temperature 100 W -65 to 200 o C 200 o C 1/4 BUY69A THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 1.75 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off Current (V BE = 0) V CE = 1000 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 8 V 1 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 8 A IB = 2.5 A 3.3 V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 8 A IB = 2.5 A 2.2 V DC Current G ain I C = 2.5 A V CE = 10 V Transition F requency I C = 0.5 A V CE = 10 V Second Breakdown Collector Current V CE = 25 V Turn on Time IC = 5 A I B1 = 1 A V CE = 250 V hFE∗ fT I s/b** t on V 15 10 MHz 4 A µs 0.2 ts ts Storage Time Fall T ime IC = 5 A I B1 = - IB2 = 1 A VCE = 250 V Fall T ime IC = 8 A I B1 = - IB2 = 2.5 A VCE = 40 V tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ∗∗ Pulsed: 1s, non repetitive pulse. For characteristics curves see the BUW34/5/6 series. 2/4 1000 1.7 0.3 µs µs 1 µs BUY69A TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BUY69A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 4/4