STD616A-1 HIGH VOLTAGE NPN POWER TRANSISTOR ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 3 2 1 APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A-1 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1000 V Collector-Emitter Voltage (IB = 0) 450 V Emitter-Base Voltage (IC = 0) 12 V Collector Current 1.6 A Collector Peak Current (tp < 5 ms) 2.4 A Base Current 0.8 A V CES Collector-Emitter Voltage (V BE = 0) V CEO V EBO IC I CM IB I BM Base Peak Current (tp < 5 ms) P t ot Total Dissipation at Tc = 25 C T stg St orage Temperature Tj April 1999 o Max. Operating Junction Temperature 1.2 A 20 W -65 to 150 o C 150 o C 1/5 STD616A-1 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 6.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Min. Typ . Max. Un it 50 0.5 µA mA Collector Cut-off Current (V BE = 0 V) V CE = 1000 V V CE = 1000 V V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA V BEO Collector-Base Sustaining Voltage I C = 1 mA V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 0.3 0.5 V V V BE(s at)∗ Base-Emitt er Saturation Voltage I C = 250 mA I C = 0.8 A I B = 65 mA I B = 250 mA 1.0 1.2 V V DC Current Gain IC IC IC IC t on ts tf RESISTIVE LO AD Turn O n Time Storage Time Fall Time V CC = 250 V I B1 = 65 mA I C = 250 mA IB2 = -130 mA 0.2 5 0.65 µs µs µs t on ts tf RESISTIVE LO AD Turn O n Time Storage Time Fall Time V CC = 250 V I B1 = 160 mA I C = 0.8 A I B2 = -0.4 A 1 2.5 0.35 µs µs µs ts tf INDUCTIVE LO AD Storage Time Fall Time V c l = 300 V I B1 = 65 mA L = 200 µH IC = 250 mA IB2 = -130 mA 5 0.5 µs µs INDUCTIVE LO AD Turn O n Time Storage Time Fall Time V c l = 300 V I B1 = 160 mA L = 200 µH IC = 0.8 A I B2 = -0.4 A 2.5 0.25 µs µs h F E∗ ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 = = = = 200 µA 300 mA 480 mA 1.6 A o T j = 125 C L = 25 mH V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V 450 V 12 V 17 25 12 4 STD616A-1 Safe Operating Area Derating Curve Reverse Biased SOA 3/5 STD616A-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.037 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 0.181 G 4.40 4.60 0.173 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 0.80 V1 10o 1.00 0.047 0.031 0.039 10o P032N_E 4/5 STD616A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5