BUL39D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 850 V V CEO Collector-Emitter Voltage (IB = 0) 450 V V EBO Emitter-Base Voltage (IC = 0) 9 V Collector Current 4 A IC I CM IB Collector Peak Current (t p <5 ms) 8 A Base Current 2 A 4 A I BM Base Peak Current (t p <5 ms) P tot o Total Dissipation at Tc = 25 C T stg Storage Temperature Tj June 1998 Max. Operating Junction Temperature 70 W -65 to 150 o C 150 o C 1/6 BUL39D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. I CES Collector Cut-off Current (V BE = 0) V CE = rated V CES V CE = rated V CES I EBO Emitter Cut-off Current (I C = 0) V EB = 9 V VCEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA L = 25 mH V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A I C = 2.5 A I B = 0.2 A I B = 0.5 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A I C = 2.5 A I B = 0.2 A I B = 0.5 A h FE ∗ DC Current Gain IC = 5 A I C = 10 mA V CE = 10 V V CE = 5 V 4 10 V CEW Maximum Collector Emitter Voltage Without Snubber IC = 6 A V BB = -2.5 V t p = 10 µs R BB = 0 Ω L = 50µH 450 ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 2.5 A V BE(off) = -5 V V CL = 300 V I Bon = 0.5 A R BB = 0 Ω L = 1 mH Vf Diode Forward Voltage IC = 2 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 Typ. T j = 125 o C Max. Unit 100 500 µA µA 100 µA 450 V 0.13 0.5 1.1 V V 1.1 1.3 V V V 0.7 50 1.5 100 µs ns 1.5 V BUL39D Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 BUL39D Inductive Fall Time Reverse Biased SOA 4/6 Inductive Storage Time BUL39D TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL39D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6