BYT230Y-400 FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHHET MAIN PRODUCT CHARACTERISTICS IF(AV) A1 K 2 x 30 A VRRM 400 V Tj (max) 150°C VF (max) 1.3 V A2 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING A2 K A1 Max247 DESCRIPTION Dual 400V rectifiers suited for Switch Mode Power Supplies and other converters. Packaged in Max247, this device is also intended for use in welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) IF(AV) Unit 400 V 380 A 50 A Per diode 30 A Per device 60 tp=5 µs F=5kHz RMS forward current Average forward current IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Value Maximum operating junction temperature October 1999 - Ed: 3A Tc = 105°C δ = 0.5 tp = 10 ms Sinusoidal 300 A - 55 to + 150 °C 150 °C 1/5 BYT230Y-400 THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth(c) Per diode Total Value 0.95 0.55 Unit °C/W Coupling 0.15 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests Conditions Tj = 25°C Min. Typ. Max. 35 Unit µA 3 12 mA 1.5 V VR = VRRM Reverse leakage current Tj = 125°C Forward voltage drop Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A Tj = 25°C IF = 60 A Tj = 125°C IF = 60 A 0.9 1.3 1.7 1.1 1.6 Typ. Max. 50 Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.0 x IF(AV) + 0.01 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. IF = 0.5A IR = 1A Irr = 0.25A IF = 1A VR = 30V dIF/dt = - 15A/µs Unit ns 100 TURN-OFF SWITCHING CHARACTERISTICS (without serie inductance) Symbol tIRM Test Conditions dIF/dt = - 120A/µs dIF/dt = - 240A/µs IRM dIF/dt = - 120A/µs dIF/dt = - 240A/µs Min. VCC = 200 V IF = 30A Lp = 0.05µH Tj = 100°C Typ. Max. 75 Unit ns 9 A 50 12 TURN-OFF OVERVOLTAGE CORFFICIENT (with serie inductance) Symbol C= 2/5 VRP VCC Test Conditions Tj = 100°C VCC = 60V IF = IF (AV) dIF/dt = - 30A/µs Lp = 1µH Min. Typ. 3.3 Max. Unit / BYT230Y-400 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). 250 PF(av)(W) IM(A) T P=40W 60 δ = 0.2 δ = 0.1 50 δ = 0.5 200 δ = 0.05 δ=tp/T δ=1 tp 150 40 P=60W 100 30 20 δ=tp/T IF(av) (A) 0 5 10 15 20 25 30 0 0.0 tp 35 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 40 Fig. 3: Average forward current versus ambient temperature(δ=0.5, perdiode). Fig. 4: Non repetitive surge peak forward current versus overloadduration( per diode). IF(av)(A) 35 P=20W 50 T 10 0 P=80W 250 IM(A) Rth(j-a)=Rth(j-c) 30 200 25 150 20 Tc=50°C Rth(j-a)=5°C/W 15 100 Tc=75°C 10 T 50 5 0 IM Tc=110°C t δ=tp/T 0 25 δ=0.5 Tamb(°C) tp 50 75 100 125 150 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode). K=[Zth(j-c)/Rth(j-c)] 1E-2 1E-1 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). 200.0 100.0 1.0 t(s) 0 1E-3 IFM(A) Typical values Tj=125°C δ = 0.5 10.0 δ = 0.2 Tj=25°C δ = 0.1 Tj=125°C 1.0 T Single pulse δ=tp/T tp(s) 0.1 1E-3 1E-2 1E-1 tp 1E+0 0.1 0.0 VFM(V) 0.5 1.0 1.5 2.0 2.5 3/5 BYT230Y-400 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 100 Fig. 8: Recoverycharges versus dIF/dt (per diode). 1000 Qrr(nC) IF=IF(av) 90% confidence Tj=100°C F=1MHz Tj=25°C 50 100 20 dIF/dt(A/µs) VR(V) 10 1 10 100 10 10 200 Fig. 9: Recovery current versus dIF/dt (per diode). IRM(A) IF=IF(av) 90% confidence Tj=100°C 50 100 200 500 Fig. 10: Transient peak forward versus dIF/dt (per diode). 30 50 20 VFP(V) IF=IF(av) 90% confidence Tj=100°C 25 20 10 15 10 5 dIF/dt(A/µs) 1 10 20 50 100 200 500 Fig. 11: Forward recovery time versus dIF/dt (per diode). 0 dIF/dt(A/µs) 0 1.50 IF=IF(av) 90% confidence Tj=100°C 1.25 200 300 400 500 Fig. 12: Dynamic parameters versus junction temperature. tfr(µs) 1.50 100 Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] 1.25 1.00 1.00 0.75 0.75 IRM 0.50 Qrr 0.50 0.25 dIF/dt(A/µs) 0.00 4/5 0 100 200 300 400 500 0.25 Tj(°C) 0 25 50 75 100 125 150 BYT230Y-400 PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A D L1 Millimeters Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 A1 L b1 b2 e b c Ordering type Marking Package Weight Base qty Delivery mode BYT230Y-400 BYT230Y-400 Max247 5 g. 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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