BYT230PIV-400 BYT231PIV-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 30 A VRRM 400 V VF (max) 1.4 V trr (max) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-400 BYT230PIV-400 FEATURES AND BENEFITS n n n n VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance < 5 nH ISOTOPTM (Plastic) DESCRIPTION These rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) tp=5 µs F=1kHz RMS forward current Value Unit 400 V 900 A 50 A IF(AV) Average forward current Tc = 75°C δ = 0.5 30 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 350 A Tstg Storage temperature range - 40 to + 150 °C 150 °C Tj Maximum operating junction temperature TM: ISOTOP is a registered trademark of STMicroelectronics. May 2000 - Ed: 5D 1/6 BYT230PIV-400 / BYT231PIV-400 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Rth(c) Per diode Total Value 1.5 0.8 Coupling 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameter Test Conditions Forward voltage drop Tj = 25°C Min. Typ. IF = 30 A Reverse leakage current Tj = 25°C Unit V 1.4 Tj = 100°C IR ** Max. 1.5 VR = VRRM Tj = 100°C 35 µA 6 mA Max. 100 Unit ns Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.1 x IF(AV) + 0.0095 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. IF = 1A VR = 30V dI F/dt = - 15A/µs Typ. 50 IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS Symbol tIRM IRM C= 2/6 VRP VCC Parameter Test Conditions M ax i m um rev ers e rec ov ery t im e dIF/dt = - 120 A/µs M ax i m um rev ers e rec ov ery c urrent dIF/dt = - 120 A/µs Turn-off overvoltage coefficient Tj = 100°C VCC = 60V IF = IF(AV) dIF/dt = - 30A/µs Lp = 1µH (see fig. 14) dIF/dt = - 240 A/µs dIF/dt = - 240 A/µs VCC = 200 V IF = 30 A Lp 0.05 µH Tj = 100°C (see fig. 13) Min. Typ. Max. Unit 75 ns 50 9 A 12 3.3 / BYT230PIV-400 / BYT231PIV-400 Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Peak current versus form factor (per diode). PF(av)(W) IM(A) 250 60 δ = 0.2 50 δ = 0.5 T 200 δ = 0.1 40 δ=tp/T δ=1 δ = 0.05 150 tp P=40W 30 100 20 P=30W T 50 10 IF(av) (A) 0 P=50W 0 5 10 15 20 δ=tp/T 25 30 P=20W δ tp 35 40 Fig. 3: Average forward current versus ambient temperature (δ=0.5, per diode). 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 4: Non repetitive surge peak forward current versus overload duration (per diode). IF(av)(A) IM(A) 35 200 Rth(j-a)=Rth(j-c) 30 180 25 160 140 20 Tc=50°C 15 Tc=25°C 100 10 T 5 0 120 Rth(j-a)=5°C/W δ=tp/T 0 80 Tamb(°C) tp 25 50 75 100 125 150 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Tc=75°C t δ=0.5 t(s) 40 1E-3 1E-2 1E-1 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) K=[Zth(j-c)/Rth(j-c)] 200.0 100.0 1.0 0.5 IM 60 Typical values Tj=100°C δ = 0.5 10.0 Tj=25°C δ = 0.2 0.2 δ = 0.1 Single pulse δ=tp/T tp(s) 0.1 1E-3 1E-2 1E-1 Tj=100°C 1.0 T tp VFM(V) 1E+0 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3/6 BYT230PIV-400 / BYT231PIV-400 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Recovery charges versus dIF/dt (per diode). C(pF) Qrr(nC) 100 1000 F=1MHz Tj=25°C 90 IF=IF(av) 90% confidence Tj=100°C 80 70 60 100 50 40 30 20 dIF/dt(A/µs) VR(V) 1 10 100 200 Fig. 9: Recovery current versus dIF/dt (per diode). 10 10 20 50 100 200 500 Fig. 10: Transient peak forward voltage versus dIF/dt (per diode). IRM(A) VFP(V) 30 50 IF=IF(av) 90% confidence Tj=100°C IF=IF(av) 90% confidence Tj=100°C 25 20 10 15 10 5 dIF/dt(A/µs) 1 10 20 50 100 dIF/dt(A/µs) 200 500 Fig. 11: Forward recovery time versus dIF/dt (per diode). 0 0 100 200 300 400 500 Fig. 12: Dynamic parameters versus junction temperature. Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C] tfr(µs) 1.50 1.50 IF=IF(av) 90% confidence Tj=100°C 1.25 1.25 1.00 1.00 0.75 IRM 0.75 0.50 Qrr 0.50 0.25 dIF/dt(A/µs) 0.00 4/6 0 100 200 300 Tj(°C) 400 500 0.25 0 25 50 75 100 125 150 BYT230PIV-400 / BYT231PIV-400 Fig. 13: Turn-off switching characteristics (without serie inductance). Fig. 14: Turn-off switching characteristics (with serie inductance). IF IF DUT DUT VCC di F/ dt LC di F/ dt LC LP VF VCC VF VCC I RM VRP VCC tIRM 5/6 BYT230PIV-400 / BYT231PIV-400 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS n n n REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering type Marking Package Weight Base qty Delivery mode BYT230PIV-400 BYT230PIV-400 ISOTOP 28 g. (without screws) 10 Tube BYT231PIV-400 BYT231PIV-400 ISOTOP 28 g. (without screws) 10 Tube Cooling method: by conduction (C) Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. 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