STMICROELECTRONICS STTH1302CT

STTH1302CT/CG/CFP
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 6.5 A
VRRM
200 V
Tj (max)
175 °C
VF (max)
0.95 V
trr (max)
25 ns
A1
K
A2
K
K
A1
FEATURES AND BENEFITS
Suited for SMPS
Low losses
Low forward and reverse recovery times
High surge current capability
High junction temperature
Insulated package: TO-220FPAB:
Insulation voltage = 2000 VDC
Capacitance = 12 pF
■
A2
K
TO-220AB
STTH1302CT
■
A2
A1
■
D2PAK
STTH1302CG
■
■
■
A2
K
A1
DESCRIPTION
Dual center tap rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters.
This device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
TO-220FPAB
STTH1302CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS)
RMS forward current
20
A
A
IF(AV)
Average forward
current δ = 0.5
TO-220AB /
Tc = 155°C
Per diode
6.5
D PAK
Tc = 145°C
Per device
13
TO-220FPAB
Tc = 135°C
Per diode
6.5
Tc = 110°C
Per device
13
2
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Maximum operating junction temperature
October 2003 - Ed: 2A
tp = 10 ms sinusoïdal
A
70
A
- 65 to + 175
°C
175
°C
1/7
STTH1302CT/CG/CFP
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
2
Junction to case
TO-220AB / D PAK
Value
Unit
3
°C/W
Per diode
TO-220FPAB
5.5
2
TO-220AB / D PAK
Total
1.9
TO-220FPAB
Rth (c)
4.5
2
Coupling
°C/W
TO-220AB / D PAK
0.8
TO-220FPAB
3.5
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR *
Reverse leakage Current
Tests Conditions
Tj = 25°C
Min.
VR = VRRM
Tj = 125°C
VF**
Pulse test :
Forward Voltage drop
Typ.
3
Tj = 25°C
IF = 6.5 A
Tj = 125°C
IF = 6.5 A
Tj = 25°C
IF = 13 A
Tj = 125°C
IF = 13 A
Max.
Unit
6
µA
60
1.1
0.81
V
0.95
1.25
0.95
1.1
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.80 x IF(AV) + 0.023 x IF2(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
ns
trr
Reverse recovery time
Tj = 25°C
IF = 0.5 A
Irr = 0.25 A
IR = 1 A
16
tfr
Forward recovery time
Tj = 25°C
IF = 6.5 A
dIF/dt = 100 A/µs
VFR = 1.1 x VF max
70
ns
Forward recovery voltage
Tj = 25°C
IF = 6.5 A
dIF/dt = 100 A/µs
2.2
V
VFP
2/7
Parameter
STTH1302CT/CG/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Peak current versus factor (per diode).
IM(A)
PF(AV)(W)
60
8
δ = 0.2
δ = 0.1
7
δ = 0.5
T
IM
50
δ = 0.05
6
δ=tp/T
δ=1
tp
40
5
4
30
P=10W
3
P=5W
20
2
P=2W
T
1
10
IF(AV)(A)
δ=tp/T
0
0
1
2
3
4
5
tp
6
7
8
δ
0
0.0
Fig. 3: Forward voltage drop versus forward current (per diode).
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB /
D2PAK).
Zth(j-c) / Rth(j-c)
IFM(A)
100.0
1.0
Tj=125°C
Typical values
δ = 0.5
Tj=125°C
Maximum values
10.0
δ = 0.2
Tj=25°C
Maximum values
δ = 0.1
1.0
Single pulse
T
tp(s)
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Fig. 4-2: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0.1
1.E-03
1.E-02
δ=tp/T
1.E-01
tp
1.E+00
Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode
(TO-220AB / D2PAK).
Zth(j-c) / Rth(j-c)
IM(A)
100
1.0
90
80
δ = 0.5
70
δ = 0.2
60
δ = 0.1
50
TC=25°C
TC=75°C
40
TC=125°C
30
Single pulse
T
20
tp(s)
0.1
1.E-02
1.E-01
δ=tp/T
1.E+00
tp
1.E+01
IM
10
t(s)
t
δ=0.5
0
1.E-03
1.E-02
1.E-01
1.E+00
3/7
STTH1302CT/CG/CFP
Fig. 5-2: Non repetitive surge peak forward current
versus
overload
duration
per
diode
(TO-220FPAB).
Fig. 6: Average forward current versus ambient temperature (δ=0.5, per diode).
IM(A)
IF(AV)(A)
70
8
60
7
50
6
40
TC=25°C
5
TC=75°C
4
TC=125°C
3
TO-220FPAB
30
20
TO-220AB/D²PAK
Rth(j-a)=Rth(j-c)
D²PAK (S=1cm²)
Rth(j-a)=50°C/W
2
IM
10
1
0
1.E-03
Tamb(°C)
t(s)
t
δ=0.5
0
1.E-02
1.E-01
1.E+00
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
25
50
75
100
125
150
175
Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).
C(nF)
QRR(nC)
100
240
F=1MHz
VOSC=30VRMS
Tj=25°C
IF=6.5A
VR=200V
220
200
180
160
140
120
Tj=125°C
100
80
Tj=25°C
60
40
VR(V)
20
10
dIF/dt(A/µs)
0
1
10
100
1000
Fig. 9: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
10
100
1000
Fig. 10: Reverse recovery current versus dIF/dt
(90% confidence, per diode).
IRM(A)
trr(ns)
12
80
IF=6.5A
VR=100V
IF=6.5A
VR=100V
70
10
60
Tj=125°C
8
Tj=125°C
50
40
6
Tj=25°C
30
4
Tj=25°C
20
2
10
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
10
4/7
100
1000
10
100
1000
STTH1302CT/CG/CFP
Fig. 11: Dynamic parameters versus junction temperature.
Fig. 12: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board
FR4, Cu = 35µm)(D2PAK).
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
Rth(j-a)(°C/W)
80
1.4
IF=6.5A
VR=100V
70
1.2
60
IRM
1.0
50
0.8
40
0.6
QRR
30
0.4
20
0.2
10
S(cm²)
Tj(°C)
0.0
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
20
PACKAGE MECHANICAL DATA
TO-220AB
REF.
DIMENSIONS
Millimeters
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
F
M
G1
E
G
Inches
L4
16.4 typ.
13
0.645 typ.
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
5/7
STTH1302CT/CG/CFP
PACKAGE MECHANICAL DATA
D2PAK
REF.
DIMENSIONS
Millimeters
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
FOOTPRINT
16.90
10.30
5.08
1.30
3.70
8.90
6/7
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
STTH1302CT/CG/CFP
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
A
B
H
Dia
L6
L2
L7
L3
L5
D
F1
L4
F2
F
E
G1
G
G1
4.95
2.4
H
L2
L3
L4
L5
10
10.4
16 Typ.
28.6
30.6
9.8
10.6
2.9
3.6
0.393
0.409
0.63 Typ.
1.126
1.205
0.386
0.417
0.114
0.142
15.9
9.00
3.00
0.626
0.354
0.118
L6
L7
Dia.
G
5.20
2.7
16.4
9.30
3.20
0.195
0.094
0.205
0.106
0.646
0.366
0.126
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH1302CT
STTH1302CT
TO-220AB
2.20 g
50
Tube
STTH1302CFP
STTH1302CFP
TO-220FPAB
STTH1302CG
STTH1302CG-TR
■
A
B
D
E
F
F1
F2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.70
0.018
0.027
0.75
1
0.030
0.039
1.15
1.70
0.045
0.067
1.15
1.70
0.045
0.067
STTH1302CG
STTH1302CG
2.0 g
50
Tube
2
1.48 g
50
Tube
2
1.48 g
1000
Tape & reel
D PAK
D PAK
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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