BYW81G-200 BYW81P-200 / BYW81PI-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES K FEATURES ■ ■ ■ ■ ■ ■ A SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS Capacitance = 7 pF NC D2PAK (Plastic) BYW81G-200 DESCRIPTION A A Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC and D²PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. K K TO-220AC (Plastic) BYW81P-200 TO-220AC Ins. (Plastic) BYW81PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) Parameter RMS forward current Average forward current δ = 0.5 A A 15 BYW81PI/G Tc=90°C 15 tp=10ms sinusoidal 200 A - 40 to + 150 - 40 to + 150 °C °C Value Unit 200 V Tstg Tj Storage and junction temperature range Parameter Repetitive peak reverse voltage July 2002 - Ed: 3E 35 Tc=115°C Surge non repetitive forward current VRRM Unit BYW81P IFSM Symbol Value 1/6 BYW81P-200 / BYW81PI-200 / BYW81G-200 THERMAL RESISTANCE Symbol Rth (j-c) Parameter Junction to case Value Unit BYW81P 2.0 °C/W BYW81PI / G 3.5 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 20 µA 1.5 mA V Tj = 125°C IF = 12 A 0.85 Tj = 125°C IF = 25 A 1.05 Tj = 25°C IF = 25 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. Unit ns IF = 0.5A IR = 1A Irr = 0.25A 25 IF = 1A VR = 30V dIF/dt = -50A/µs 40 tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj = 25°C IF = 1A tr = 10 ns 2 V 2/6 BYW81P-200 / BYW81PI-200 / BYW81G-200 Fig. 1: Average forward power dissipation versus average forward current. 20.0 P F(av)(W) 350 =0.05 17.5 Fig. 2: Peak current versus form factor. =0.1 =0.2 =0.5 IM(A) =1 T 300 15.0 I 250 12.5 M =tp/T 200 tp 10.0 P=10W 150 T 7.5 P=20W 100 5.0 P=30W 2.5 50 I F(av)(A) =tp/T tp 20 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Forward voltage drop versus forward current (maximum values). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 0.0 0 2.5 5 7.5 10 12.5 15 17.5 1.0 VFM(V) 1.8 1.6 K Zth(j-c) (tp. K = Rth(j-c) ) Tj=125 oC 1.4 =0.5 0.5 1.2 =0.2 1.0 =0.1 0.8 T 0.6 0.2 Single pulse 0.4 0.2 IFM(A) 0.0 0.1 1 10 100 200 Fig. 5: Non repetitive surge peak forward current versus overload duration. (BYW81P) IM(A) 160 150 140 130 120 110 100 90 80 70 60 50 40 IM 30 20 10 0 0.001 =tp/T tp(s) 0.1 1.0E-03 1.0E-02 1.0E-01 tp 1.0E+00 Fig. 6: Non repetitive surge peak forward current versus overload duration. (BYW81PI / BYW81G) IM(A) Tc=25 oC Tc=75 o C Tc=115 o C t =0.5 t(s) 0.01 0.1 1 120 110 100 90 80 70 60 50 40 30 IM 20 10 0 0.001 Tc=25 oC Tc=60 o C Tc=90 o C t =0.5 t(s) 0.01 0.1 1 3/6 BYW81P-200 / BYW81PI-200 / BYW81G-200 Fig. 7: Average current temperature. (duty cycle : 0.5) (BYW81P) versus ambient I F(av)(A) 16 15 14 Rth(j-a)=Rth(j-c) 13 12 11 10 Rth(j-a)=15 o C/W 9 8 7 =0.5 T 6 5 4 3 2 =tp/T tp 1 Tamb( o C) 0 0 20 40 60 80 100 120 140 160 Fig. 9: Junction capacitance versus reverse voltage applied (Typical values). Fig. 8: Average current versus ambient temperature. (duty cycle : 0.5) (BYW81PI / BYW81G) I F(av)(A) 16 15 Rth(j-a)=Rth(j-c) 14 13 12 11 10 Rth(j-a)=15 o C/W 9 8 7 =0.5 T 6 5 4 3 2 =tp/T tp Tamb( o C) 1 0 0 20 40 60 80 100 120 140 Fig. 10: Recovery charges versus dIF/dt. C(pF) 60 120 160 QRR(nC) F=1Mhz Tj=25 oC 90%CONFIDENCE 115 50 IF=IF(av) 110 Tj=100 OC 40 105 30 100 Tj=25 O C 95 20 90 10 85 dIF/dt(A/us) VR(V) 80 1 10 30 50 70 Fig. 11: Peak reverse current versus dIF/dt. 3.0 0 1 20 40 60 80 Fig. 12: Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125 oC] IRM(A) 1.50 90%CONFIDENCE IF=IF(av) 2.5 10 1.25 Tj=100 OC 2.0 1.00 IRM 1.5 0.75 1.0 0.50 QRR Tj=25 O C 0.5 dIF/dt(A/us) 0.0 1 4/6 10 20 40 60 80 0.25 0.00 0 Tj( oC) 25 50 75 100 125 150 BYW81P-200 / BYW81PI-200 / BYW81G-200 PACKAGE MECHANICAL DATA TO-220AC (JEDEC outline) DIMENSIONS A H2 C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G ■ ■ ■ ■ ■ REF. Millimeters Inches A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Marking : Type number Cooling method : C Weight : 1.9 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA TO-220AC (isolated) DIMENSIONS C B b2 I REF. Millimeters Inches L F A a1 l2 a2 b1 c1 e ■ ■ ■ ■ ■ c2 A a1 a2 B b1 b2 C c1 c2 e F I L l2 Min. 14.23 12.70 10.20 0.64 1.15 4.48 0.35 2.10 4.58 5.85 3.55 2.54 1.45 Max. 15.87 4.50 14.70 10.45 0.96 1.39 4.82 0.65 2.70 5.58 6.85 4.00 3.00 1.75 Min. 0.560 0.500 0.402 0.025 0.045 0.176 0.020 0.083 0.180 0.230 0.140 0.100 0.057 Max. 0.625 0.177 0.579 0.411 0.038 0.055 0.190 0.026 0.106 0.220 0.270 0.157 0.118 0.069 Marking : Type number Cooling method : C Weight : 2.2 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYW81P-200 / BYW81PI-200 / BYW81G-200 PACKAGE MECHANICAL DATA D2PAK (Plastic) DIMENSIONS A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm ■ REF. Millimeters Inches A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° Cooling method: by conduction (method C) FOOT PRINT DIMENSIONS (in millimeters) D²PAK 16.90 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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