STMICROELECTRONICS ICC03

ICC03-400B2

Application Specific Discretes
A.S.D.TM
IGNITION CONTROL CIRCUIT
FEATURES AND BENEFITS
MONOLITHIC CIRCUIT FOR CAPACITANCE
DISCHARGE SYSTEM CONTROL.
DEDICATED THYRISTOR STRUCTURE FOR
IGNITION OPERATION.
APPLICATIONSPECIFIC DISCRETES (ASD).
SURFACE AREA REDUCTION.
DIL8 PACKAGE.
DIL8
(Plastic)
DESCRIPTION
The ICC03 is a high-performance planar-diffused
technology adapted to rugged environment
conditions.
It has been developed especially for small engines
using a capacitor discharge technique for ignition
operation.
The ICC03 assumes electronics control of the
ignition system.
- Pin 1
:
Motor stop
- Pin 3
:
Ground
- Pin 4
:
Sensor
- Pin 6/7
:
Ignition capacitor
- Pin 8
:
Charging, winding
- Pin 2/5
:
Not connected
FUNCTIONAL DIAGRAM
TOP VIEW
08
01
D2
D1
02
07
03
06
TH
04
05
See basic application and functionality page 4.
September 1998 Ed : 1A
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ICC03-400B2
ABSOLUTE MAXIMUM RATINGS : THYRISTOR TH
Symbol
Parameter
Value
Unit
ITRM
Repetitive peak on-state current (Note1)
Tl=110 °C
100
A
ITSM
Non repetitive surge peak on-state current
Tj initial = 25 °C
tp = 20 µs
150
A
tp = 10 ms
5
A
Tj = 125°C
400
V
VDRM
Repetitive peak off-state voltage
ABSOLUTE MAXIMUM RATINGS : DIODES
Symbol
Value
Parameter
Unit
D1
D2
IFRM
Repetitive peak forward current
(Note 1)
Tl= 110 °C
1
100
A
IFSM
Non repetitive surge forward current
Tj initial = 25 °C
tp = 20 µs
15
150
A
tp = 10 ms
2
5
A
Tj= 125 °C
25
400
V
VRRM
Repetitive peak off-state voltage
Note 1: Test current waveform
20 s
6ms
ABSOLUTE MAXIMUM RATINGS : FOR ALL DEVICE (ICC03)
Symbol
T stg
Tj
Tl
Parameter
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
Value
Unit
- 40 to + 150
- 40 to + 150
°C
260
°C
Value
Unit
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a)
Thermal resistance junction to ambient
100
°C/W
Rth(j-l)
Thermal resistance junction to lead
15
°C/W
2/7
ICC03-400B2
ELECTRICAL CHARACTERISTICS : THYRISTOR TH
Symbol
Test Conditions
Value
Unit
IGT
VD=12V (DC) RL=33Ω
Tj= 25°C
MAX
1
mA
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
MAX
1.5
V
VTM
ITM= 4A tp ≤ 1ms
Tj= 25°C
MAX
1.9
V
IDRM
VDRM rated
Tj= 25°C
MAX
50
µA
Tj= 125°C
MAX
1
mA
Value
Unit
ELECTRICAL CHARACTERISTICS : DIODE D1
Symbol
IR
VF
Test Conditions
VR = VRRM
IF = 100 mA tp ≤ 1ms
Tj= 25°C
MAX
50
µA
Tj= 125°C
MAX
1
mA
Tj= 25°C
MAX
1.2
V
Value
Unit
ELECTRICAL CHARACTERISTICS : DIODE D2
Symbol
IR
VF
Test Conditions
VR = VRRM
IF = 4 A tp ≤ 1ms
Tj= 25°C
MAX
50
µA
Tj= 125°C
MAX
1
mA
Tj= 25°C
MAX
1.9
V
ORDERING INFORMATION
ICC
03 - 400
B2
IGNITION CONTROL
CIRCUIT
CIRCUIT NUMBER
03 : SCR + 2 DIODES
PACKAGE :
B2 : DIL8
VOLTAGE = 400 V
3/7
ICC03-400B2
Fig.1 : Relative variation of gate trigger current versus junction temperature.
Igt [Tj] / Igt [Tj=25 o C]
4
3.5
3
2.5
2
1.5
1
0.5
Tj ( o C)
0
-40
-30 -20
-10
0
10
20
30
40
50
60
70
80
90 100
Fig.2 : Safety limitation curve of the capacitor voltage variation versus RPM @ tp=20µs.
Vcapa (V)
450
Tamb=70 o C
400
350
Tj=150 oC Limitation
VD R M limitation
300
Ip
0.6 Ip
250
0.4 Ip
200
20 µs
150
0
2000
4000
6000
RPM
4/7
8000
10000
12000
ICC03-400B2
BASIC APPLICATION
Ic
STOP BUTTON
t
1
D1
SUPPLY
COIL
ICC03
D2
IGNITION
COIL
C1
8
6
7
L1
D3
4
N
D4
SPARK
Ic
TH
Ig
PLUG
3
PR
R
P
SE
Vs
+
Vs
C2
_
t
FLY-WHEEL
SENSOR
COIL
see functional diagram page 1
The applications using the capacitive ignition
system (CDI) operate in 3 phases.
PHASE 1
Storage of the energy in the capacitor C1
PHASE 2
Discharge of the capacitor C1 and spark
generationto the ignition coil.
PHASE 3
Engine stop.
1) ENERGY STORAGE IN C1
The coil L1 generates an alternative voltage. Its
positive part charges the capacitor C1 through the
diode D2.
The negative waves are clamped by the diode D3.
The negative sinewave generated is clamped by
D4 while the positive sinewave initiates a current
IG through the thyristor gate (Th)
The firing of the SCR causes an alternating
discharge current Ic through the capacitor C1.
The positive parts of this current flow in the loop
C1, Th and the primary of the ignition coil PR.
The negative parts flow through C1, PR and both
diodes D3 and D2.
3) ENGINE STOP
The engine stop is obtained by short circuiting the
supply coil L1 (stop button). The diode D1 avoids
the accidental connection of battery voltage.
2) SPARK GENERATION
For each fly-wheel revolution the sensor coil
produces a bidirectional pulse Vs and triggers the
ignition coil.
5/7
ICC03-400B2
ALTERNATIVE APPLICATION
SUPPLY
COIL
D
C1
IGNITION
COIL
6/7
SPARK
STOP
R1
N
ICC03
4
PR
1
D1
R
P
Vs
3
C2
FLY-WHEEL
SENSOR
COIL
see functional diagram page 1
With this type of alternative application, the
operationphases will be the same but the topology
of component integrationis different. This topology
is adapted to applications using the diode D2 in
anti-parallel with the thyristor.
In this case the rectifier diode D must withstand a
reversed voltage up to 1500V following the value of
R1.
With this configurationthe current Ic oscillates, and
its positive part flows through thyristor TH, while
diode D2 assumes the conduction of the negative
parts.
6/7
PLUG
D2
TH
8
SE
ICC03-400B2
R RESISTOR CALCULATION
PROTECTION AGAINST PARASITIC SPIKES
The purpose of the resistor R is to limit the current
IG through the thyristor gate. Its maximum value
can be calculated as follow :
R max = (Vs min - VGT max) / 2 IGT max
The capacitor C2 in relation with R acts as a filter
and avoids the unexpected firing of the thyristor
due to parasitic spikes. Good results have been
obtained with 10nF capacitance.
POWER LOSSES (For 20µs - see note 1)
The following equations can be used to evaluate
power losses :
For TH VTO = 2.65V Rt = 0.110 Ω
For D2 VFO = 1.73V Rd = 0.075 Ω
PACKAGE MECHANICAL DATA
DIL8 (Plastic)
DIMENSIONS
REF.
I
a1
B1
B
b
b1
L
F
e
Z
E
e3
D
8
5
1
4
Millimetres
Inches
Min. Typ. Max. Min. Typ. Max.
a1
0.70
0.027
B
B1
1.39
0.91
1.65 0.055
1.04 0.036
b
b1
0.5
0.38
D
0.065
0.041
0.020
0.50 0.015
0.020
9.80
0.385
E
e
8.8
2.54
0.346
0.100
e3
7.62
0.300
F
I
7.1
4.8
L
Z
3.3
0.44
0.280
0.189
0.130
1.60 0.017
0.063
Marking : ICC3-400
Weight : 0.59 g
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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