L6567
HIGH VOLTAGE DRIVER FOR CFL
n
BCD-OFF LINE TECHNOLOGY
n
FLOATING SUPPLY VOLTAGE UP TO 570V
n
GND REFERRED SUPPLY VOLTAGE UP TO
18V
n
UNDER VOLTAGE LOCK OUT
n
CLAMPING ON Vs
n
DRIVER CURRENT CAPABILITY:
30mA SOURCE
70mA SINK
n
MULTIPOWER BCD TECHNOLOGY
SO14
PREHEAT AND FREQUENCY SHIFT TIMING
DESCRIPTION
The device is a monolithic high voltage integrated circuit designed to drive CFL and small TL lamps with a
minimum part count.
It provides all the necessary functions for proper preheat, ignition and steady state operation of the lamp:
♦ variable frequency oscillator;
DIP14
ORDERING NUMBERS:
L6567D
L6567
♦ settable preheating and ignition time;
♦ capacitive mode protection;
♦ lamp power independent from mains voltage variation.
Besides the control functions, the IC provides the level shift and drive function for two external power MOS
FETs in a half-bridge topology.
BLOCK DIAGRAM
Vhv
Rhv
Cp/Cav
RHV
CP
13
8
5
VS
PREHEATING
TIMING
FEED FORWARD
CS
Cf
CF
12
CI
14
LEVEL
SHIFTING
HIGH
SIDE
DRIVER
1
FS
2
G1
3
S1
6
G2
7
PGND
11
SGND
Vhv
Cboot
VS
T1
Chv
L
Lamp
VCO +
FREQ. SHIFTING
Ci
LOW
SIDE
DRIVER
LOGIC
BIAS
CURRENT
GENERATOR
VOLTAGE
REFERENCE
to
comp.
C
9
T2
CL
MAINS
Chv
Rshunt
RS
10
Ref
RREF
D96IN441B
January 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/15
L6567
PIN FUNCTION
N°
Pin
Description
1
FS
Floating Supply of high side driver
2
G1
Gate of high side switch
3
S1
Source of high side switch
4
NC
High Voltage Spacer. (Should be not connected)
5
VS
Supply Voltage for GND level control and drive
6
G2
Gate of low side switch
7
PGND
8
CP
First timing (TPRE TIGN), then averaging the ripple in the representation of the HVB (derived
through RHV).
9
RS
R SHUNT: current monitoring input
10
RREF
Reference resistor for current setting
11
SGND
Signal Ground. Internally Connected to PGND
12
CF
13
RHV
14
CI
Power Ground
Frequency setting capacitor
Start-up supply resistor, then supply voltage sensing.
Timing capacitor for frequency shift
PIN CONNECTION (Top view)
FS
1
14
CI
G1
2
13
RHV
S1
3
12
CF
N.C.
4
11
SGND
VS
5
10
RREF
G2
6
9
RS
PGND
7
8
CP
D96IN440
2/15
L6567
ABSOLUTE MAXIMUM RATINGS
Symbol
VS
Parameter
Low Voltage Supply
Value
Unit
18 (1)
V
VRHV
Mains Voltage Sensing
VCP
Preheat/Averaging
5
V
VCF
Oscillator Capacitor Voltage
5
V
VCI
Frequency Shift Capacitor Voltage
5
V
VRREF
Reference Resistor Voltage
5
V
VRS
Current Sense Input Voltage
-5 to 5
V
transient 50ns
-15
V
VG2
Low Side Switch Gate Output
18
V
V S1
High Side Switch Source Output: normal operation
-1 to 373
V
-1 to 550
V
-1 to 391
V
0.5sec mains transient
-1 to 568
V
with respect to pin S1
Vbe to V S
V
391
V
568
V
18
V
VS +2VBE (2)
0.5sec mains transient
VG1
VFS
High Side Switch Gate Output: normal operation
Floating Supply Voltage: normal operation
0.5sec mains transient
VFS/S1
Floating Supply vs S1 Voltage
∆VFS/∆T
VFS Slew Rate (Repetitive)
-4 to 4
V/ns
∆V S1/∆T
VS1 Slew Rate (Repetitive)
-4 to 4
V/ns
3 (3)
mA
200 (4)
mA
IRHV
Current Into RHV
IVs
Clamped Current into VS
Tstg
Storage Temperature
-40 to 150
°C
Tj
Junction Temperature
-40 to 150
°C
NOTES: (1) Do not exceed package thermal dissipation limi ts
(2) For VS ≤ VS high 1
(3) For VS > VS high 1
(4) Internally Limited
Note: ESD immunity for pins 1, 2 and 3 is guaranteed up to 900 V (Human Body Model)
3/15
L6567
ELECTRICAL CHARACTERISTCS
(VS = 12V; RREF = 30KΩ; CF = 100pF; Tj = 25°C; unless otherwise specified.)
Symbol
Parameter
Test Conditio n
Min.
Typ.
Max.
Unit
10.7
11.7
12.7
V
12
13
14
V
9
10
11
V
1.5
1.65
1.8
V
1
6
V
50
250
mA
1.2
mA
VS - SUPPLY VOLTAGE SECTION
VS high 1
VS Turn On Threshold
VS high2
VS Clamping Voltage
V S low 2
VS Turn Off Threshold
VS HYST
Supply Voltage Hysteresis
V S low 1
VS Voltage to Guarantee
VG1 =”0”and VG2 = ”1
VS = 20mA
ISSP
VS Supply Current at Start Up
VS = 10.6V Before turn on
ISOP
VS Supply Operative Current
VS = VShigh 1
OSCILLATOR SECTION
fosc min
Minimum Oscillator frequency
IRHV = 0mA; CI = 5V
41.7
43
44.29
kHz
fosc 600m
Feed Forward Frequency
IRHV = 600mA
47.88
50.4
52.92
kHz
fosc 1mA
Feed Forward Frequency
IRHV = 1mA
79.8
84
88.2
kHz
fosc max
Maximum Oscillator Frequency CI = 0V
96.75
107.5
118.25
KHz
∆ICF/∆VCI
Oscillator Transconductance
17.5
µA/V
1.12
sec
9
PREHEAT/IGNITION SECTION
P.H.T.
Preheat Time
Cp = 150nF
0.88
1
P.H.clocks
Number of Preheat Clocks
16
IGN.clocks
Number of Ignition Clocks
15
RATE OF FREQUENCY CHANGE SECTION
ICIP charge
CI Charging Current During
Preheat
106
118
130
mA
ICII charge
CI Charging Current During
Ignition
1
1.2
1.4
mA
CI Discharge Current
-52
-47
-42
mA
CI Low Voltage Threshold
10
100
mV
ICI disch
VTH CI
RS - THRESHOLD SECTION
VCMTH
VPH
Capacitive Mode Voltage
Threshold
Preheat Voltage Threshold
0
20
40
mV
-0.64
-0.6
-0.56
V
1.05
1.4
1.75
µs
G1 - G2 DELAY TIMES SECTION
G1DON
4/15
On Delay of G1 Output
L6567
ELECTRICAL CHARACTERISTCS (Continued)
Symbol
G2DON
Parameter
Test Conditio n
On Delay of G2 Output
IRHV = 1mA; Cl = 5V
G1 DON + G1ON Ratio between Delay Time +
------------------------------------------- Conduction Time of G1 and G2
Cl = 0V
G2 DON + G2ON
Min.
Typ.
Max.
Unit
1.05
1.4
1.75
µs
0.87
0.77
1.15
1.30
LOW SIDE DRIVER SECTION
Ron G2 so
G2 Source Output Resistance
VS = 12V, V = 3V
80
190
Ω
Ron G2 si
G2 Sink Output Resistance
VS = 12V, V = 3V
65
125
Ω
Ron G1 so
G1 Source Output Resistance
VS = 10V, V = 3V
80
190
Ω
Ron G1 si
G1 Sink Output Resistance
VS = 10V, V = 3V
65
125
Ω
HIGH SIDE DRIVER SECTION
IFSLK
Leakage Current of FS PIN to
GND
VFS = 568V; G1 = L
VFS = 568V; G1 = H
5
5
µA
µA
IS1 LK
Leakage Current of S1 PIN to
GND
VS1 = 568V; G1 = L
VS1 = 568V; G1 = H
5
5
µA
µA
BOOTSTRAP SECTION
Boot Th
BOOTSTRAP Threshold
VS = 10.6V before turn on
5 (*)
V
AVERAGE RESISTOR
R AVERAGE
Average Resistor
27
38.5
50
kΩ
(*) Before starting the first commutation; when switching 6V is guaranteed.
General operation
The L6567 uses a small amount of current from a supply resistor(s) to start the operation of the IC. Once start
up condition is achieved, the IC turns on the lower MOS transistor of the half bridge which allows the bootstrap
capacitor to charge. Once this is achieved, the oscillator begins to turn on the upper and lower MOS transistors
at high frequency, and immediately ramps down to a preheat frequency. During this stage, the IC preheats the
lamp and after a predetermined time ramps down again until it reaches the final operating frequency. The IC
monitors the current to determine if the circuit is operating in capacitive mode. If capacitive switching is detected,
the IC increases the output frequency until zero-voltage switching is resumed.
Startup and supply in normal operation
At start up the L6567 is powered via a resistor connected to the RHV pin (pin 13) from the rectified mains. The
current charges the CS capacitor connected to the VS pin (pin 5). When the VS voltage reaches the threshold
VS LOW1 (max 6V), the low side MOS transistor is turned on while the high side one is kept off. This condition
assures that the bootstrap capacitor is charged. When VS HIGH1 threshold is reached the oscillator starts, and
the RHV pin does not provide anymore the supply current for the IC (see fig.1).
5/15
L6567
Figure 1. Start up
VSHIGH1
VSLOW1
VS
TDT
0
VG
low side mosfet
0
VG-VS
high side mosfet
0
CF
0
TIME
Oscillator
The circuit starts oscillating when the voltage supply VS has reached the VS HIGH1 threshold. In steady state
condition the oscillator capacitor CF (at pin 12) is charged and discharged symmetrically with a current set mainly by the external resistor RREF connected to pin 10. The value of the frequency is determined by capacitor CF
and resistor RREF. This fixed value is called FMIN. A dead time TDT between the ON phases of the transistors
is provided for avoiding cross conduction, so the duty cycle for each is less than 50%. The dead time depends
on RREF value (fig. 7).
The IC oscillating frequency is between FMIN and FMAX = 2.5 · FMIN in all conditions.
Preheating mode
The oscillator starts switching at the maximum frequency FMAX. Then the frequency decreases at once to reach
the programmed preheating frequency (fig.2). The rate of decreasing (df/dt) is determined by the external capacitor CI (pin 14). The preheat time TPRE is adjustable with external components (RREF and CP). The preheat
current is adjusted by sense resistance RSHUNT. During the preheating time the load current is sensed with the
sense resistor RSHUNT (connected between pin 9-RS- and pin 7-PGND-). At pin 9 the voltage drop on RSHUNT
is sensed at the moment the low side MOS FET is turned off. There is an internal comparator with a fixed threshold VPH: if VRS > VPH the frequency is decreased and if VRS < VPH the frequency is increased. If the VPH threshold is reached, the frequency is held constant for the programmed preheating time TPRE.
TPRE is determined by the external capacitor CP (pin8) and by the resistor RREF: CP is charged 16 times with a
current that depends on RREF, and these 16 cycles determine the TPRE.
So the preheat mode is programmable with external components as far as TPRE is concerned (RREF &CP) and
as far as the preheating current is concerned (choosing properly RSHUNT and the resonant load components:
L and C L).
The circuit is held in the preheating mode when pin 8 (CP) is grounded.
In case FMIN is reached during preheat, the IC assumes an open load. Consequently the oscillation stops with
the low side MOS transistor gate on and the high side gate off. This condition is kept until V
S undershoots VS LOW1.
6/15
L6567
Figure 2. Preheating and ignition state.
FREQUENCY
F MAX
F MIN
preheating
state
ignition
state
burning state
TIME
Ignition mode
At the end of the preheat phase the frequency decreses to the minimum frequency (FMIN), causing an increased
coil current and a high voltage appearing across the lamp. That is because the circuit works near resonance.
This high voltage normally ignites the lamp. There is no protection to avoid high ignition currents through the
MOS transistors when the lamp doesn’t ignite. This only occurs in an end of lamp life situation in which the circuit
may break. Now the lowest frequency is the resonance frequency of L and CL (the capacitor across the lamp).
The ignition phase finishes when the frequency reaches FMIN or (at maximum) when the ignition time has
elapsed. The ignition time is related to TPRE: TIGN = (15/16) · TPRE. The CP capacitor is charged 15 times with
the same current used to charge it during TPRE.
The frequency shifting slope is determined by CI.
During the ignition time the VRS monitoring function changes in the capacitive mode protection.
Steady state operation: feed forward frequency
The lamp starts operating at FMIN, determined by RREF and CF directly after the ignition phase. To prevent too
high lamp power at high mains voltages, a feed forward correction is implemented. At the end of the preheat
phase the RHV pin is connected to an internal resistor to sense the High Voltage Bus. If the current in this resistor
increases and overcomes a value set by RREF , the current that charges the oscillator capacitor CF increases
too. The effect is an increase in frequency limiting the power in the lamp. In order to prevent feed forward of the
ripple of the VHV voltage, the ripple is filtered with capacitor CP on pin 8 and an integrated resistor RAVERAGE.
Figure 3. Burn state
FREQUENCY
feed forward mode
FMIN
Irhv
7/15
L6567
Capacitive mode protection
During ignition and steady state the operating frequency is higher than the resonance frequency of the load
(L,CL,RLAMP and RFILAMENT), so the transistors are turned on during the conduction time of the body diode in
order to maintain Zero Voltage Switching.
If the operating frequency undershoots the resonance frequency ZVS doesn’t occur and causes hard switching
of the MOS transistors. The L6567 detects this situation by measuring VRS when the low side MOS FET is turned
on. At pin 9 there is an internal comparator with threshold VCM TH (typ~20mV ): if VRS < VCM TH capacitive mode is
assumed and the frequency is increased as long as this situation is present. The shift is determined by CI.
Steady state frequency
At any time during steady state the frequency is determined by the maximum on the following three frequencies:
fSTEADY STATE= MAX {FMIN, fFEED FORWARD, fCAPACITIVE MODE PROTECTION}.
IC supply
At start up the IC is supplied with a current that flows through RHV and an internal diode to the VS pin whichcharges the external capacitor CS. In steady state condition RHV is used as a mains voltage sensor, so it doesn’t
provide anymore the supply current. The easiest way to charge the CS capacitor (and to supply the IC) is to use
a charge pump from the middle point of the half bridge.
To guarantee a minimum gate power MOS drive, the IC stops oscillating when VS is lower than VS HIGH2. It will
restart once the VS will become higher than VS HIGH1. A minimum voltage hysteresis is guaranteed. The IC restarts operating at f = FMAX ,then the frequency shifts towards FMIN. The timing of this frequency shifting is TIGN
(that is: CP capacitor is charged and discharged 15 times).Now the oscillator frequency is controlled as in standard burning condition (feed forward and capacitive mode control). Excess charge on CS is drained by an internal clamp that turns on at voltage VS CL .
Ground pins
Pin 7(PGND) is the ground reference of the IC with respect to the application. Pin 11( SGND) provides a local
signal ground reference for the components connected to the pins CP, CI, RREF and CF.
Relationship between external components and sistem working condition
L6567 is designed to drive CFL and TL lamps with a minimum part count topology. This feature implies that each
external component is related to one or more circuit operating state.
This table is a short summary of these relationships:
FMIN ---> RREF & CF
FFEED FORWARD ---> CF & IRHV
TPRE & TIGN ---> CP & RREF
FPRE ---> RSHUNT, L, CL, LAMP
TDT ---> RREF
df/dt ---> CI
Some useful formulas can well approximate the values:
1
F MI N ≅ --------------------------------8 ⋅ RR E F ⋅ CF
15
If IRHV is greater than: I R HV ≥ -------------- , the feed forward frequency is settled and the frequency value is fitted by the
R R EF
followi ng expression:
IR H V
F F E ED FOR W AR D ≅ --------------------121 ⋅ CF
8/15
L6567
Other easy formulas fit rather well:
TDT ≅ 46.75 · 10^-12 · RREF
TPRE ≅ 224 · CP · RREF
As far as df/dt is concerned, there are no easy formulas that fit the relation between CF, RF, and CI. CI is charged
and discharged by three different currents that are derived from different mirroring ratios by the current flowing
on RREF. The voltage variations on CI are proportional to the current that charges CF, that is to say they are
proportional to df/dt.
The values obtained in the testing conditions (CI = 100nF) are:
during preheating and working conditions the typical frequency increase is ~ 20KHz/ms, the typical decrease is
~-10Khz/ms;
During ignition the frequency variation is ~ -200Hz/ms.
If slower variations are needed, CI has to be increased.
Due to these tight relationships, it is recommended to follow a precise procedure: first RHV has to be chosen
looking at startup current needs and dissipation problems. Then the feed forward frequency range has to be
determined, and so CF is set.
Given a certain CF, RREF is set in order to fix FMIN. Now CP can be chosed to set the desired TPRE and TIGN.
The other external parameters (RSHUNT and CI) can be chosen at the end because they are just related to a
single circuit parameters.
9/15
L6567
Figure 4. IC Operation
START
VS>VSLOW1
N
Y
NO OSCILLATION
LOW SIDE MOS ON
HIGH SIDE MOS OFF
VS>VSHIGH1
N
Y
START OSCILLATION
F=FMAX
T=T0
VS>VSHIGH2
N
Y
N
VS>VSHIGH2
T>T0+TPRE+TIGN
Y
Y
T=T 0+TPRE
N
Y
VRS<VCMTH
N
PREHEATING MODE
N
N
IGNITION MODE
F>FMIN
INCREA SE
FREQUENCY
F>FMIN
N
Y
Y
DECREA SE
FREQUE NCY
DECR EASE
FREQUENCY
FEED FORWARD MODE
ACTIVATED
OPEN LOAD DETECT ION: STOP
LOW SIDE MOS ON
AND HIGH SIDE MOS OFF
N
VS>VSHIGH2
Y
STOP OSCILLATION
LOW SIDE MOS ON
HIGH SIDE MOS OFF
N
Y
RESTART WITH
F=FMAX
FREQUENCY SHIFTS IN T=T IGN
TOWARDS BURNING STATE CONDITION
(F=MAX{FMAX,FFEEDFORWARD,FCAPACITIVEMODE })
10/15
Y
VRS<V CMTH
BURNING MODE
VS>VSHIGH1
Y
Y
VRS>V PH
N
N
Y
F>F MIN
Y
DECREA SE
FREQUE NCY
F>F FEEDFORWARD
N
INCR EASE
FREQUENCY
INCREASE
FREQUE NCY
L6567
Figure 8. Frequency vs IRHV @ CF = 82pF
Figure 5. Working frequency vs IRHV
@ RREF = 30Kohm
120.00
1 6 0 .0 0
15 0 .0 0
C f= 47pF
R re f= 30Ko hm
14 0 .0 0
1 2 0 .0 0
C f= 82pF
10 0 .0 0
Cf= 100 pF
9 0 .0 0
8 0 .0 0
Cf= 120 pF
7 0 .0 0
fr e q u e n c y [k H z ]
Cf= 6 8p F
11 0 .0 0
fr eq u e n cy [kH z]
100.00
Cf= 56p F
13 0 .0 0
R r ef= 20 K
R r ef= 22 K
R re f= 24K
Cf=15 0pF
6 0 .0 0
80.00
60.00
R re f=2 7K
Cf=1 80 pF
5 0 .0 0
R re f= 30 K
Cf=22 0pF
4 0 .0 0
R re f= 33K
3 0 .0 0
Rr ef= 36 K
40.00
2 0 .0 0
R re f= 39 K , 4 3 K, 4 7K , 5 1K
1 0 .0 0
0 .0 0
0.2 0
0.20
0.4 0
0 .6 0
0 .8 0
1 .00
0.40
1 .20
0 .60
0.80
Irh v [m A ]
1.00
1.20
Irh v [m A ]
Figure 6. Frequency vs CF @ RREF=30Kohm
Figure 9. Frequency vs IRHV @ CF=100pF
10 0.0 0
1 60 .0 0
150.00
140.00
R ref= 30K ohm
130.00
8 0.0 0
1 20 .0 0
fr e q u e n c y [k H z ]
110.00
fre q u e n c y [k H z ]
100.00
90.00
80 .0 0
70.00
R re f= 2 0 K
R r ef = 2 2 K
6 0.0 0
Rr ef = 2 4 K
R re f = 2 7 K
60.00
R re f = 3 0 K
50.00
R re f = 3 3 K
4 0.0 0
R re f = 3 6 K
I=1m A
40 .0 0
R re f = 3 9K ,4 3 K
I= 0 .7 5 m A )
30.00
20.00
I=0.5m A
10.00
0 .0 0
40 .0 0
2 0.0 0
0 .2 0
60 .0 0
0 .4 0
0 .6 0
0 .8 0
1 .0 0
1 .2 0
Ir h v [m A ]
80 .0 0 1 00 .0 0 1 2 0.00 14 0 .0 0 16 0.0 0 1 80 .0 0 20 0.0 0 2 20 .0 0 2 4 0.00
C f [p F ]
Figure 10. Frequency vs IRHV @ CF=120pF
Figure 7. TDT vs RREF @ CF = 100pF
80 .0 0
T d t [ca lc u late d da ta]
2.40
Td t [m e as u re d d a ta]
2.00
fre q u e n c y [k H z ]
T d t [u s ]
60 .0 0
1.60
R r ef = 20 K
R re f = 2 2 K
R r e f = 24 K
40 .0 0
R re f = 2 7 K
R re f= 3 0 K
1.20
R r e f = 33 K
R re f = 3 6 K
R re f = 3 9 K
R r e f= 43 K , 4 7 K , 5 1 K
0.80
20 .00
30 .00
4 0.0 0
R re f [ K o h m ]
50.00
6 0.0 0
20 .0 0
0 .20
0 .40
0.60
0.80
1.00
1.20
Ir h v [m A ]
11/15
L6567
Figure 11. Frequency vs IRHV @ CF= 150pF
Figure 13. FFEED FORWARD: measurements and
calculations
80.00
120000.00
c a lc u latio ns ( 1/12 1 )*Ir hv /C f
110000.00
Cf= 8 2pF
m eas u re m en ts
100000.00
Cf= 1 00p F
90000.00
F req . fe ed for wa rd [H z]
fre q u e n c y [k H z ]
60.00
R ref= 20 K
40.00
R ref= 22 K
Rr ef= 24 K
R re f= 27K
80000.00
C f= 12 0 pF
70000.00
Cf= 1 50p F
60000.00
50000.00
40000.00
30000.00
R re f= 30K
R r ef= 33K
Rr ef= 36 K
R r ef= 39K
20000.00
10000.00
20.00
Rr ef=4 3 K, 47K , 51 K
0.00
0. 4 0
0 .6 0
0 .8 0
Irh v [ m A ]
0.20
0.40
0.60
0.80
Ir h v [m A ]
1.00
1.20
Figure 12. FMIN: measurements and calculations
1 00 .0 0
m eas ura m ents
Fm in= 1/(8 *C f*R ref)
F m in [KH z ]
80 .0 0
60 .0 0
40 .0 0
C f= 82pF
C f=100p F
C f=120pF
20 .0 0
C f=15 0pF
0 .0 0
20 .0 0
30 .0 0
R re f [K o hm ]
12/15
4 0 .0 0
50 .0 0
1 . 00
1 .2 0
L6567
mm
DIM.
MIN.
a1
0.51
B
1.39
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.055
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
15.24
0.600
F
7.1
0.280
I
5.1
0.201
L
OUTLINE AND
MECHANICAL DATA
3.3
0.130
DIP14
Z
1.27
2.54
0.050
0.100
13/15
L6567
mm
DIM.
MIN..
TYP.
A
a1
inch
MAX.. MIN..
TYP.. MAX..
1.75
0.1
0.25
b
0.35
b1
0.19
a2
0.069
0.004
0.009
0.46
0.014
0.018
0.25
0.007
0.010
1.6
C
0.063
0.5
c1
0.020
45° (typ.)
D (1)
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
e3
0.050
7.62
0.300
F (1)
3.8
4
0.150
0.157
G
4.6
5.3
0.181
0.209
L
0.4
1.27
0.016
0.050
M
S
0.68
0.027
8° (max.)
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
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OUTLINE AND
MECHANICAL DATA
SO14
L6567
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