L9222 QUAD INVERTING TRANSISTOR SWITCH .. .. . OUTPUT VOLTAGE TO 50V OUTPUT CURRENT TO 1.2A VERY LOW SATURATION VOLTAGE TTL COMPATIBLE INPUTS INTEGRAL SUPPRESSION DIODE DESCRIPTION The L9222 monolithic quad transistor switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common enable input. All inputs are TTL-compatible for direct connection to logic circuits. Each switch consists of an open-collector transistor plus a clamp diode for applications with inductive loads. Powerdip (12+2+2) ORDERING NUMBER : L9222 The emitters of the four switches are connected together to GND. The switches of the same device may be paralled. The device is intended to drive coilssuch as relays, solenoids,unipolar steppermotors, LED etc. BLOCK DIAGRAM October 1990 1/5 L9222 ABSOLUTE MAXIMUM RATINGS Symbol Parameter VOUT Output Voltage VCC Logic Supply Voltage Input Voltage Vi Tj, TST Junction and Storage Temperature Range Value Unit – 0.7 to 50 V 7 V – 0.7 to VCC + 0.3 V – 55 to 150 °C PIN CONNECTION (top view) TRUTH TABLE Enable Inpu t Power Out H H L L H X ON OFF OFF F or each input : H= H igh level L= Low level X = Don’t care THERMAL DATA Symbol Rth j-amb R th-J-case 2/5 Parameter Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max Value Unit 90 14 °C/W °C/W L9222 ELECTRICAL CHARACTERISTICS (VCC = 5Vdc ± 5% VEN = 5V – 40 ≤ Tj ≤ 125°C unless otherwise specified) Symbol VCE(sus) ICEX VCE(sat) Test Conditions Min. Output Sustaining Voltage Parameter VIN = 2V VEN = 2V, IOUT = 100mA 46 Output Leakage Current VCE = 50V VIN = 2V, VEN = 0.8V Collector Emitter Saturation VIN ≥ 0.8V IOUT = 0.1A IOUT = 0.3A IOUT = 0.6A; – 40 + 105°C VIL Input Low Voltage IIL Input Low Current VIH Input High Voltage IIH Typ. Max. Unit 1 mA 0.3 0.5 0.8 V V V V 0.8 V µA VIN = 0.4V – 15 2.0 V Input High Current VIN ≥ 2.0V – 15 µA IS Logic Supply Current All Outputs ON IOUT = 06A 50 All Outputs OFF 10 IR Clamp Diode Leakage Current VR = 50V Diode Reverse Voltage VF Clamp Diode Forward Voltage IF = 0.6A 1.8 V IF = 1.2A 2.0 mA 20 mA 100 µA Output Current VIN = 0.4V, R = 10Ω, VS = 13V TPHL Propagation Delay Time (high to low transition) Tj = 25°C IL = 600mA 20 µs TPHL Propagation Delay Time (low to high transition) IL = 600mA Tj = 25°C 20 µs VENL Low Enable Voltage 0.8 V IENL Low Enable Current High Enable Voltage IENH High Enable Voltage VEN = 0.4V 1.2 V IOUT VENH 0.9 90 A µA – 15 2.0 VEN ≥ 2.0V – 15 V 15 µA 3/5 L9222 POWERDIP16 PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.055 0.020 0.50 D 0.015 0.020 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L Z 4/5 inch 3.30 0.130 1.27 0.050 L9222 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 5/5