L6220 L6220N QUAD DARLINGTON SWITCHES . .. .. . TWO NON INVERTING + TWO INVERTING INPUTS WITH INHIBIT OUTPUT VOLTAGE UP TO 50V OUTPUT CURRENT UP TO 1.8A VERY LOW SATURATION VOLTAGE TTL COMPATIBLE INPUTS INTEGRAL FAST RECIRCULATION DIODES DESCRIPTION The L6220 monolithic quad darlington switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common inhibit input. All inputs are TTL-compatible for direct connection to logic circuits. Each switch consists of an open-collector darlington transistor plus a fast diode for switching applications with inductive loads. The emitters of the four switches are commoned. Any number of inputs and outputs of the same device may be paralleled. Two versions are available : the L6220 mounted in a Powerdip 12 + 2 + 2 package and the L6220N mounted in a 15-lead Multiwatt package. Powerdip 12 + 2 + 2 (Plastic Package) ORDERING NUMBER : L6220 Multiwatt 15 (Plastic Package) ORDERING NUMBER : L6220N PIN CONNECTIONS (top views) L6220 (Powerdip) April 1993 L6220N (Multiwatt-15) 1/12 L6220 - L6220N PIN FUNCTIONS (see block diagram) Name IN 1 IN 2 Function Input to Driver 1 Input to Driver 2 OUT 1 Output of Driver 1 OUT 2 Output of Driver 2 CLAMP A IN 3 IN 4 Diode Clamp to Driver 1 and Driver 2 Input to Driver 3 Input to Driver 4 OUT 3 Output of Driver 3 OUT 4 Output of Driver 4 CLAMP B INHIBIT Vs GND Diode Clamp to Driver 3 and Driver 4 Inhibit Input to all Drivers Logic Supply Voltage Common Ground BLOCK DIAGRAM TRUTH TABLE Inhibit Input 1, 4 Power Out Inhibit Inputs 2, 3 Power Out L L H H L X ON OFF OFF L L H L H X ON OFF OFF For each input : H = High level L = Low level 2/12 L6220 - L6220N ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vo Ouput Voltage 50 V Vs Logic Supply Voltage 7 V Input Voltage, Inhibit Voltage Vs IC Continuous Collector Current (for each channel) 1.8 A IC Collector Peak Current (repetitive, duty cycle = 10 % ton = 5 ms) 2.5 A IC Collector Peak Current (non repetitive, t = 10 µs) 3.2 A °C VIN, VINH Top Operating Temperature Range (junction) – 40 to + 150 Tstg Storage Temperature Range – 55 to + 150 °C Isu b Output Substrate Current 350 mA Ptot Total Power Dissipation 4.3 20 1 2.3 W W W W at at at at Tpins Tcase Tamb Tamb = = = = 90oC o 90 C o 70 C o 70 C (Powerdip) (Multiwatt) (Powerdip) (Multiwatt) THERMAL DATA Symbol Parameter Powerdip Multiwatt–15 Unit R th j-pins Thermal Resistance Junction-pins Max. 14 - o Rth j-case Thermal Resistance Junction-case Max. - 3 o Rth j-amb Thermal Resistance Junction-ambient Max. 80 35 o C/W C/W C/W ELECTRICAL CHARACTERISTICS Refer to the test circuits Fig. 1 to Fig.9 (VS = 5V, Tamb = 25oC unless otherwise specified) Symbol Parameter Test Conditions VS Logic Supply Voltage Is Logic Supply Current All Outputs ON, IC = 0.7A All Outputs OFF Output Sustaining Voltage IC =100mA, VINH = VINHH Output Leakage Current VCE = 50V, VIN 1.4 = VINHH Collector Emitter Saturation Voltage (one output on ; all others off.) Vs = 4.5V, VIN 2.3 = VINL VINH = VINHL IC = 0.6A IC = 1A IC = 1.8A VCE (sus) ICEX VCE (sat ) VINL, VINHL Input Low Voltage IINL, IINHL Input Low Current VINH, VINHH Input High Voltage IINH, IINHH Min. 4.5 Typ. Max. Unit 5.5 V 20 20 mA MA 1 mA 46 V V 1 1.2 1.6 VIN = VINL, VINH = VINHL 0.8 V - 100 µA 2.0 V Input High Current VIN = VINH, VINH = VINHH ± 10 µA IR Clamp Diode Leakage Current VR = 50V, VINH = VINHH 100 µA VF Clamp Diode Forward Voltage IF = 1A IF = 1.8A 1.6 2.0 V V td (on) Turn on Delay Time Vp = 5V, R L = 10Ω 2 µs td (off) Turn off Delay Time Vp = 5V, R L = 10Ω ∆ Is Logic Supply Current Variation VIN = 5V, VEN = 5V Iout = – 300mA for each Channel 5 µs 120 mA 3/12 L6220 - L6220N TEST CIRCUITS (X) = Referred to Multiwatt package X = Referred to Powerdip package Figure 1 : Logic Supply Current. Set V 1 = 4.5V, V 2 = 0.8V, V INH = 4.5V or V 1 = 0.8V, V 2 = 4.5V, V INH = 0.8 for IS (all outputs off). Set V 1 = 2V, V 2 = 0.8V, V INH = 0.8V for IS (all outputs on). Figure 2 : Output Sustaining Voltage. 4/12 Figure 3 : Output Leakage Current. L6220 - L6220N Figure 4 : Collector-emitter Saturation Figure 5 : Logic Input Characteristics. Set Set Set Set Figure 6 : Clamp Diode Leakage Current. S 1, S 2 open, V IN, V INH = 0.8V for I IN L, I INH L S 1, S 2 open, V IN, V INH = 2V for I IN H, I INH H S 1, S 2 close, V IN, V INH = 0.8V for V IN L, V INH L S 1, S 2 close, V IN, V INH = 2V for V IN H, V INH H. Figure 7 : Clamp Diode Forward Voltage. 5/12 L6220 - L6220N Figure 8 : Switching Times Test Circuit. Figure 9 : Switching Times Waveforms. Figure 10 : Collector Saturation Voltage versus Collector Current Figure 11 : Free- wheeling Diode ForwardVoltage versus Diode Current 6/12 L6220 - L6220N Figure 12 : Collector Saturation Voltage versus Junction Temperature at IC = 1A Figure 13 : Free-wheeling Diode Forward Voltage versus Junction Temperature at If = 1A Figure 14 : Collector Saturation Voltage versus Junction Temperature at IC = 1.8A Figure 15 : Free-wheeling Diode Forward Voltage versus Junction Temperature at IF = 1.8A Figure 16. Figure 17 : Unipolar Stepper Motor Driver. 7/12 L6220 - L6220N APPLICATION INFORMATION When inductive loads are driven by L6220/N, a zener diode in series with the integral free-wheeling diodes increases the voltage across which energy stored in the load is discharged and therefore speeds the current decay (Fig. 16). For reliability it is suggested that the zener is chosen so that Vp + Vz < 35 V. The reasons for this are two fold : 1) The zener voltage changes in temperature and current. Figure 18 : Allowed Peak Collector-current versus Duty Cycle for 1, 2, 3 or 4 Contemporary Working Outputs (L6220). MOUNTING INSTRUCTION The Rth j-amb of the L6220 can be reduced by soldering the GND pins to a suitable copper area of the printed circuit board (Fig. 20) or to an external heatsink (Fig. 21). The diagram of figure 22 shows the maximum dissipable power Ptot and the Rth j-amb as a function of the side ” α” of two equal square copper areas hav- 8/12 2) The instantaneouspower must be limited to avoid the reverse second breakdown. The particular internal logic allows an easier full step driving using only two input signals. Figure 19 : Allowed Peak Collector Cur-rent versus Duty Cycle for 1, 2, 3 or 4 Contemporary Working Outputs (L6220N). ing a thickness of 35µ (1.4 mils). During soldering the pins temperature must not exceed 260 °C and the soldering time must not be longer than 12 seconds. The external heatsink or printed circuit copper area must be connected to electrical ground. L6220 - L6220N Figure 20 : Example of P.C. Board Copperarea which is used as Heatsink Figure 21 : External Heatsink Mounting Example Figure 22 : Maximum Dissipable Power and Junction to Ambient Thermal Resistance versus Side ”α” Figure 23 : Maximum Allowable Power Dissipation versus Ambient Temperature 9/12 L6220 - L6220N MULTIWATT15 PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. MIN. TYP. MAX. A 5 0.197 B 2.65 0.104 C 1.6 D 0.063 1 0.039 E 0.49 0.55 0.019 0.022 F 0.66 0.75 0.026 0.030 G 1.14 1.27 1.4 0.045 0.050 0.055 G1 17.57 17.78 17.91 0.692 0.700 0.705 H1 19.6 0.772 H2 L 10/12 inch MAX. 20.2 22.1 22.6 0.795 0.870 0.890 L1 22 22.5 0.866 0.886 L2 17.65 18.1 0.695 0.713 L3 17.25 17.5 17.75 0.679 0.689 0.699 L4 10.3 10.7 10.9 0.406 0.421 0.429 L7 2.65 2.9 0.104 M 4.2 4.3 4.6 0.165 0.169 M1 4.5 5.08 5.3 0.177 0.200 S 1.9 2.6 0.075 0.114 0.181 0.209 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 L6220 - L6220N POWERDIP16 PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.020 0.50 D 0.055 0.015 0.020 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L Z 3.30 0.130 1.27 0.050 11/12 L6220 - L6220N Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT is a Registered Trademark SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 12/12