KST92/KST93 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • High Current, Wide SOA 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC TJ, TSTG Parameter Value Units : KST92 : KST93 -300 -200 V V : KST92 : KST93 -300 -200 V V -5 V Collector Current -500 mA Junction and Storage Temperature 150 °C Value Units Power Dissipation (TA=25°C) 250 mW Thermal Resistance, Junction to Ambient 500 °C/W Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Thermal Characteristics Symbol PD RθJA* Parameter * note) minimum land pattern size. © 2009 Fairchild Semiconductor Corporation KST92/KST93 Rev. C1 www.fairchildsemi.com 1 KST92/KST93 — PNP Epitaxial Silicon Transistor September 2009 Symbol BVCBO BVCEO BVEBO ICBO Parameter Test Condition Collector-Base Breakdown Voltage : KST92 : KST93 IC= -100μA, IE=0 * Collector-Emitter Breakdown Voltage : KST92 : KST93 IC= -1mA, IB=0 Emitter-Base Breakdown Voltage IE= -100μA, IC=0 hFE Max. Units -300 -200 V V -300 -200 V V -5 V Collector Cut-off Current : KST92 : KST93 IEBO Min. Emitter Cut-off Current VCB= -200V, IE=0 VCB= -160V, IE=0 -0.25 -0.25 μA μA VEB= -5V, IC=0 -0.1 μA 25 40 25 * DC Current Gain VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE (sat) * Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.5 V VBE (sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.9 V 6 8 pF pF Cob Output Capacitance VCB= -20V, IE=0 f=1MHz : KST92 : KST93 fT Current Gain Bandwidth Product VCE= -20V, IC= -10mA f=100MHz 50 MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking Code Type KST92 KST93 Mark 2D 2E Marking 2D © 2009 Fairchild Semiconductor Corporation KST92/KST93 Rev. C1 www.fairchildsemi.com 2 KST92/KST93 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted KST92/KST93 — PNP Epitaxial Silicon Transistor VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE Typical Performance Characteristics 1000 hFE, DC CURRENT GAIN VCE = -10V 100 10 1 -1 -10 -100 -1000 -10000 IC = 10 IB VBE(sat) -1000 VCE(sat) -100 -10 -1 IC[mA], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 2. Saturation Voltage Figure 1. DC current Gain 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Cib [pF], Cob [pF], CAPACITANCE -10 Cib 10 Cob 1 -0.1 -1 -10 VCE = -20V f = 100MHz 100 10 -1 -100 -10 -100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 4. Current Gain Bandwidth Product Figure 3. Capacitance FBSOA IC [mA], Collector Current 1000 100 DC 10 1 KST92 0.1 0.1 1 10 KST93 100 VCE [V], Collector-Emitter Voltage Figure 5. Active-Regio Safe Operating Area © 2009 Fairchild Semiconductor Corporation KST92/KST93 Rev. C1 www.fairchildsemi.com 3 KST92/KST93 — PNP Epitaxial Silicon Transistor Physical Dimension ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation KST92/KST93 Rev. C1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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