M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM ■ 2.7 to 3.6V LOW VOLTAGE in READ OPERATION ■ READ ACCESS TIME: – 80ns at VCC = 3.0 to 3.6V – 100ns at VCC = 2.7 to 3.6V ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 4 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 40 40 1 1 FDIP40W (F) PDIP40 (B) – Active Current 20mA at 8MHz – Stand-by Current 15µA ■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V ■ PROGRAMMING TIME: 50µs/word ■ ELECTRONIC SIGNATURE PLCC44 (K) – Manufacturer Code: 20h – Device Code: B8h DESCRIPTION The M27W400 is a low voltage 4 Mbit EPROM offered in the two range UV (Ultra Violet Erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as either 512 Kwords of 8 bit or 256 Kwords of 16 bit. The pinout is compatible with the most common 4 Mbit Mask ROM. The M27W400 operates in the read mode with a supply voltage as low as 2.7V at –40 to 85°C temperature range. The decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. The FDIP40W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For application where the content is programmed only one time and erasure is not required, the M27W400 is offered in PDIP40 and PLCC44 packages. January 2000 Figure 1. Logic Diagram VCC 18 Q15A–1 A0-A17 15 Q0-Q14 E M27W400 G BYTEVPP VSS AI03096 1/15 M27W400 1 40 2 39 3 38 4 37 5 36 6 35 7 34 33 8 32 9 31 10 M27W400 30 11 29 12 28 13 27 14 26 15 25 16 17 24 18 23 19 22 20 21 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTEVPP VSS Q15A–1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC A5 A6 A7 A17 NC NC NC A8 A9 A10 A11 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS G Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 Figure 2B. LCC Connections 1 44 A4 A3 A2 A1 A0 E 12 M27W400 34 VSS G Q0 Q8 Q1 A12 A13 A14 A15 A16 BYTEVPP VSS Q15A–1 Q7 Q14 Q6 23 Q9 Q2 Q10 Q3 Q11 NC VCC Q4 Q12 Q5 Q13 Figure 2A. DIP Connections AI03604 AI03097 Table 1. Signal Names A0-A17 Address Inputs Q0-Q7 Data Outputs Q8-Q14 Data Outputs Q15A–1 Data Output / Address Input E Chip Enable G Output Enable BYTEVPP Byte Mode / Program Supply VCC Supply Voltage VSS Ground 2/15 DEVICE OPERATION The operating modes of the M27W400 are listed in the Operating Modes Table. A single power supply is required in the read mode. All inputs are TTL compatible except for V PP and 12V on A9 for the Electronic Signature. Read Mode The M27W400 has two organisations, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTEVPP pin. When BYTEVPP is at VIH the Word-wide organisation is selected and the Q15A–1 pin is used for Q15 Data Output. When the BYTEVPP pin is at V IL the Byte-wide organisation is selected and the Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide organisation, then with A–1 at VIL the lower 8 bits of the 16 bit data are selected and with A–1 at VIH the upper 8 bits of the 16 bit data are selected. M27W400 Table 2. Absolute Maximum Ratings (1) Symbol Value Unit Ambient Operating Temperature (3) –40 to 125 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V –2 to 13.5 V –2 to 14 V TA VCC VA9 (2) Parameter A9 Voltage VPP Program Supply Voltage Note: 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V CC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. 3. Depends on range. Table 3. Operating Modes E G BYTEVPP A9 Q7-Q0 Q14-Q8 Q15A–1 Read Word-wide VIL VIL VIH X Data Out Data Out Data Out Read Byte-wide Upper VIL VIL VIL X Data Out Hi-Z VIH Read Byte-wide Lower VIL VIL VIL X Data Out Hi-Z VIL Output Disable VIL VIH X X Hi-Z Hi-Z Hi-Z VIL Pulse VIH VPP X Data In Data In Data In Verify VIH VIL VPP X Data Out Data Out Data Out Program Inhibit VIH VIH VPP X Hi-Z Hi-Z Hi-Z Standby VIH X X X Hi-Z Hi-Z Hi-Z Electronic Signature VIL VIL VIH VID Codes Codes Code Mode Program Note: X = VIH or VIL, V ID = 12V ± 0.5V. Table 4. Electronic Signature A0 Q15 or Q7 Q14 or Q6 Q13 or Q5 Q12 or Q4 Q11 or Q3 Q10 or Q2 Q9 or Q1 Q8 or Q0 Hex Data Manufacturer’s Code VIL 0 0 1 0 0 0 0 0 20h Device Code VIH 1 0 1 1 1 0 0 0 B8h Identifier 3/15 M27W400 Table 5. AC Measurement Conditions High Speed Standard Input Rise and Fall Times ≤ 10ns ≤ 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V 1.5V 0.8V and 2V Input and Output Timing Ref. Voltages Figure 3. Testing Input Output Waveform Figure 4. AC Testing Load Circuit 1.3V High Speed 1N914 3V 1.5V 3.3kΩ 0V DEVICE UNDER TEST Standard 2.4V OUT CL 2.0V 0.8V 0.4V AI01822 CL = 30pF for High Speed CL = 100pF for Standard CL includes JIG capacitance AI01823B Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz) Symbol CIN COUT Parameter Test Condition Min Max Unit Input Capacitance (except BYTEVPP) VIN = 0V 10 pF Input Capacitance (BYTEVPP) VIN = 0V 120 pF VOUT = 0V 12 pF Output Capacitance Note: 1. Sampled only, not 100% tested. The M27W400 has two control functions, both of which must be logically active in order to obtain data at the outputs. In addition the Word-wide or Byte- wide organisation must be selected. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins independent of device selection. Assuming that the addresses are stable, the address access time (tAVQV) is equal to the delay 4/15 from E to output (tELQV). Data is available at the output after a delay of t GLQV from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-tGLQV. Standby Mode The M27W400 has a standby mode which reduces the supply current from 20mA to 15µA. The M27W400 is placed in the standby mode by applying a CMOS high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the G input. M27W400 Table 7. Read Mode DC Characteristics (1) (TA = 0 to 70 °C or –40 to 85 °C; VCC = 2.7 to 3.6V; VPP = V CC) Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current ICC Test Condition Min Max Unit 0V ≤ VIN ≤ VCC ±1 µA 0V ≤ VOUT ≤ VCC ±10 µA E = VIL, G = VIL, IOUT = 0mA, f = 8MHz 20 mA E = VIL, G = VIL, IOUT = 0mA, f = 5MHz 15 mA E = VIH 1 mA E > VCC – 0.2V 15 µA VPP = VCC 10 µA Supply Current ICC1 Supply Current (Standby) TTL ICC2 Supply Current (Standby) CMOS IPP Program Current VIL Input Low Voltage –0.6 0.2 VCC V VIH (2) Input High Voltage 0.7 VCC VCC + 0.5 V VOL Output Low Voltage 0.4 V VOH Output High Voltage TTL IOL = 2.1mA IOH = –400µA 2.4 V Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Maximum DC voltage on Output is VCC +0.5V. Two Line Output Control Because EPROMs are usually used in larger memory arrays, this product features a 2-line control function which accommodates the use of multiple memory connection. The two-line control function allows: a. the lowest possible memory power dissipation b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the supplies to the devices. The supply current I CC has three segments of importance to the system designer: the standby current, the active current and the transient peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device outputs. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic capacitor is used on every device between V CC and VSS. This should be a high frequency type of low inherent inductance and should be placed as close as possible to the device. In addition, a 4.7µF electrolytic capacitor should be used between V CC and VSS for every eight devices. This capacitor should be mounted near the power supply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. 5/15 M27W400 Table 8. Read Mode AC Characteristics (1) (TA = 0 to 70 °C or –40 to 85 °C; VCC = 2.7 to 3.6V; VPP = V CC) M27W400 -100(3) Symbol Alt Parameter Test Condition -120 VCC = 3.0 to 3.6V VCC = 2.7 to 3.6V Min Min Max Max VCC = 2.7 to 3.6V Min Unit Max Address Valid to Output Valid E = VIL, G = VIL 80 100 120 ns tST BYTE High to Output Valid E = VIL, G = VIL 80 100 120 ns tELQV tCE Chip Enable Low to Output Valid G = VIL 80 100 120 ns tGLQV tOE Output Enable Low to Output Valid E = VIL 40 50 60 ns tBLQZ (2) tSTD BYTE Low to Output Hi-Z E = VIL, G = VIL 40 50 60 ns tEHQZ (2) tDF Chip Enable High to Output Hi-Z G = VIL 0 40 0 50 0 60 ns tGHQZ (2) tDF Output Enable High to Output Hi-Z E = VIL 0 40 0 50 0 60 ns tAXQX tOH Address Transition to Output Transition E = VIL, G = VIL 5 5 5 ns tBLQX tOH BYTE Low to Output Transition E = VIL, G = VIL 5 5 5 ns tAVQV tACC tBHQV Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed measurement conditions. 6/15 M27W400 Figure 5. Word-Wide Read Mode AC Waveforms A0-A17 VALID tAVQV VALID tAXQX E tEHQZ tGLQV G tGHQZ tELQV Hi-Z Q0-Q15 AI01636 Note: BYTEVPP = VIH. Figure 6. Byte-Wide Read Mode AC Waveforms A–1,A0-A17 VALID tAVQV VALID tAXQX E tGLQV tEHQZ G tELQV Q0-Q7 tGHQZ Hi-Z AI01637 Note: BYTEVPP = VIL. 7/15 M27W400 Figure 7. BYTE Transition AC Waveforms A0-A17 VALID A–1 VALID tAVQV tAXQX BYTEVPP tBHQV DATA OUT Q0-Q7 tBLQX Hi-Z Q8-Q15 DATA OUT tBLQZ AI01638B Note: Chip Enable (E) and Output Enable (G) = VIL. Table 9. Programming Mode DC Characteristics (1) (TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.5V ± 0.25V) Symbol Parameter Test Condition Min 0 ≤ VIN ≤ VCC Max Unit ±1 µA 50 mA 50 mA ILI Input Leakage Current ICC Supply Current IPP Program Current VIL Input Low Voltage –0.3 0.8 V VIH Input High Voltage 2.4 VCC + 0.5 V VOL Output Low Voltage 0.4 V VOH Output High Voltage TTL VID A9 Voltage E = VIL IOL = 2.1mA IOH = –2.5mA 3.5 11.5 V 12.5 V Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. Programming When delivered (and after each erasure for UV EPROM), all bits of the M27W400 are in the ’1’ state. Data is introduced by selectively programming ’0’s into the desired bit locations. Although only ’0’s will be programmed, both ’1’s and ’0’s can be present in the data word. The only way to 8/15 change a ’0’ to a ’1’ is by die exposition to ultraviolet light (UV EPROM). The M27W400 is in the programming mode when V PP input is at 12.5V, G is at VIH and E is pulsed to V IL. The data to be programmed is applied to 16 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. V CC is specified to be 6.25V ± 0.25V. M27W400 Table 10. Programming Mode AC Characteristics (1) (TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.5V ± 0.25V) Symbol Alt Parameter Test Condition Min Max tAVEL tAS Address Valid to Chip Enable Low 2 µs tQVEL tDS Input Valid to Chip Enable Low 2 µs tVPHAV tVPS VPP High to Address Valid 2 µs tVCHAV tVCS VCC High to Address Valid 2 µs tELEH tPW Chip Enable Program Pulse Width 45 tEHQX tDH Chip Enable High to Input Transition 2 µs tQXGL tOES Input Transition to Output Enable Low 2 µs tGLQV tOE Output Enable Low to Output Valid tGHQZ (2) tDFP Output Enable High to Output Hi-Z 0 tGHAX tAH Output Enable High to Address Transition 0 55 Unit µs 120 ns 130 ns ns Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested. Figure 8. Programming and Verify Modes AC Waveforms A0-A17 VALID tAVEL DATA IN Q0-Q15 tQVEL DATA OUT tEHQX BYTEVPP tVPHAV tGLQV tGHQZ VCC tVCHAV tGHAX E tELEH tQXGL G PROGRAM VERIFY AI01639 9/15 M27W400 Figure 9. Programming Flowchart VCC = 6.25V, VPP = 12.5V n=0 E = 50µs Pulse NO ++n = 25 YES FAIL NO ++ Addr VERIFY YES Last Addr NO YES CHECK ALL WORDS BYTEVPP =VIH 1st: VCC = 5V 2nd: VCC = 2.7V AI03600 PRESTO III Programming Algorithm The PRESTO III Programming Algorithm allows the whole array to be programed with a guaranteed margin in a typical time of 26 seconds. Programming with PRESTO III consists of applying a sequence of 50µs program pulses to each word until a correct verify occurs (see Figure 9). During programing and verify operation a MARGIN MODE circuit is automatically activated to guarantee that each cell is programed with enough margin. No overpromise pulse is applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell. Program Inhibit Programming of multiple M27W400s in parallel with different data is also easily accomplished. Except for E, all like inputs including G of the parallel M27W400 may be common. A TTL low level pulse applied to a M27W400's E input and VPP at 12.5V, will program that M27W400. A high level E input inhibits the other M27W400s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with E at V IH and G at VIL, V PP at 12.5V and VCC at 6.25V. 10/15 On-Board Programming The M27W400 can be directly programmed in the application circuit. See the relevant Application Note AN620. Electronic Signature The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The ES mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the M27W400. To activate the ES mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27W400, with V PP = VCC = 5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during Electronic Signature mode. Byte 0 (A0 = V IL) represents the manufacturer code and byte 1 (A0 = V IH) the device identifier code. For the STMicroelectronics M27W400, these two identifier bytes are given in Table 4 and can be read-out on outputs Q7 to Q0. ERASURE OPERATION (applies to UV EPROM) The erasure characteristics of the M27W400 is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27W400 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27W400 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27W400 window to prevent unintentional erasure. The recommended erasure procedure for M27W400 is exposure to short wave ultraviolet light which has a wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 30 W-sec/cm 2. The erasure time with this dosage is approximately 30 to 40 minutes using an ultraviolet lamp with 12000 µW/cm 2 power rating. The M27W400 should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure. M27W400 Table 11. Ordering Information Scheme Example: M27W400 -100 X F 6 TR Device Type M27 Supply Voltage W = 2.7 to 3.6V Device Function 400 = 4 Mbit (512Kb x8 or 256Kb x16) Speed -100(1,2) = 100 ns -120 = 120ns VCC Tolerance blank = ± 10% X = ± 5% Package F = FDIP40W (3) B = PDIP40 K = PLCC44 Temperature Range 6 = –40 to 85 °C Options TR = Tape & Reel Packing Note: 1. High Speed, see AC Characteristics section for further information. 2. This speed also guarantees 80ns access time at V CC = 3.0 to 3.6V. 3. For Ceramic Package please contact our Sales Office. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Table 1. Revision History Date Revision Details November 1999 First Issue 01/19/00 From TARGET SPECIFICATION to DATA SHEET 120ns speed class added Temperature Range 1 removed Note 3 added (Table 11) 11/15 M27W400 Table 12. FDIP40W - 40 lead Ceramic Frit-seal DIP with window, Package Mechanical Data Symb mm Typ inches Min Max A Typ Min 5.72 Max 0.225 A1 0.51 1.40 0.020 0.055 A2 3.91 4.57 0.154 0.180 A3 3.89 4.50 0.153 0.177 0.41 0.56 0.016 0.022 – – – – 0.23 0.30 0.009 0.012 51.79 52.60 2.039 2.071 – – 1.900 – – 0.600 B B1 1.45 C D D2 48.26 E 15.24 E1 e 2.54 ea. 14.99 0.057 – – 13.06 13.36 – – 0.100 0.590 – – 0.514 0.526 – – – – – – be 16.18 18.03 0.637 0.710 L 3.18 – 0.125 – S 1.52 2.49 0.060 0.098 ∅ – – α 8.13 4° 11° N 40 0.320 – – 4° 11° 40 Figure 10. FDIP40W - 40 lead Ceramic Frit-seal DIP with window, Package Outline A2 A3 A1 B1 B A L e α eA D2 C eB D S N ∅ E1 E 1 FDIPW-a Drawing is not to scale. 12/15 M27W400 Table 13. PDIP40 - 40 pin Plastic DIP, 600 mils width, Package Mechanical Data mm inches Symb Typ Min Max Typ Min Max A 4.45 – – 0.175 – – A1 0.64 0.38 – 0.025 0.015 – A2 3.56 3.91 0.140 0.154 B 0.38 0.53 0.015 0.021 B1 1.14 1.78 0.045 0.070 C 0.20 0.31 0.008 0.012 D 51.78 52.58 2.039 2.070 – – – – E 14.80 16.26 0.583 0.640 E1 13.46 13.99 0.530 0.551 – D2 48.26 1.900 e1 2.54 – – 0.100 – ea. 15.24 – – 0.600 – be 15.24 17.78 0.600 0.700 L 3.05 3.81 0.120 0.150 S 1.52 2.29 0.060 0.090 α 0° 15° 0° 15° N 40 40 Figure 11. PDIP40 - 40 lead Plastic DIP, 600 mils width, Package Outline A2 A1 B1 B A L e1 α eA D2 C eB D S N E1 E 1 PDIP Drawing is not to scale. 13/15 M27W400 Table 14. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Mechanical Data mm inches Symb Typ Min Max A 4.20 A1 Min Max 4.70 0.165 0.185 2.29 3.04 0.090 0.120 A2 – 0.51 – 0.020 B 0.33 0.53 0.013 0.021 B1 0.66 0.81 0.026 0.032 D 17.40 17.65 0.685 0.695 D1 16.51 16.66 0.650 0.656 D2 14.99 16.00 0.590 0.630 E 17.40 17.65 0.685 0.695 E1 16.51 16.66 0.650 0.656 E2 14.99 16.00 0.590 0.630 – – – – 0.00 0.25 0.000 0.010 – – – – e 1.27 F R 0.89 N Typ 0.050 0.035 44 44 CP 0.10 0.004 Figure 12. PLCC44 - 44 lead Plastic Leaded Chip Carrier, Package Outline D D1 A1 A2 1 N B1 E1 E Ne e D2/E2 F B 0.51 (.020) 1.14 (.045) A Nd R PLCC Drawing is not to scale. 14/15 CP M27W400 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 15/15