T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC 21642 and in APPLICATIONS DESCRIPTION • Emitter in photo interrupters T163VU is an infrared, 950 nm emitting diode chip in GaAs technology. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 1.2 - 950 800 T163VU Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T163VU-SF-F PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil without any frame MOQ: 25 000 pcs Chip Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Forward current TEST CONDITION IF 100 mA Reverse voltage VR 5 V IFSM 1.5 A Tj 125 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg1 - 40 to + 100 °C Storage temperature range on foil Tstg2 - 40 to + 50 °C Surge forward current tp = 100 µs Junction temperature Note Tamb = 25 °C, unless otherwise specified Document Number: 81133 Rev. 1.2, 29-Mar-10 For technical questions, contact: [email protected] www.vishay.com 1 T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms VF 1.3 IF = 1 A, tp = 100 µs VF 1.8 V IF = 100 mA TKVF - 1.3 mV/K VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 100 mA, TO-18 gold header assembly Ie 1.2 mW/sr IF = 100 mA φe 22 mW %/K Forward voltage Temperature coefficient of VF Junction capacitance Radiant intensity Radiant power (epoxy encapsulated) MIN. TYP. MAX. UNIT V Temperature coefficient of φe IF = 100 mA TKφe - 0.8 Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA λ0.5 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 20 mA tr, tf 800 ns IF = 1 A tr, tf 400 ns Rise time, fall time Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.6 10 3 1.2 Ie rel; Φe rel I F - Forward Current (mA) 10 4 10 2 10 1 0 1 2 3 0 - 10 0 10 4 V F - Forward Voltage (V) 94 7996 94 7993 Fig. 1 - Forward Current vs. Forward Voltage Φe rel - Relative Radiant Power IF = 10 mA 1.0 0.9 0.8 140 1.0 0.75 0.5 0.25 0.7 0 20 40 60 80 Tamb - Ambient Temperature (°C) IF = 100 mA 0 900 100 Fig. 2 - Relative Forward Voltage vs. Ambient Temperature www.vishay.com 2 100 1.25 1.1 94 7990 50 T amb - Ambient Temperature (°C) Fig. 3 - Relative Radiant Intensity/Power vs. Ambient Temperature 1.2 VF rel - Relative Forward Voltage (V) 0.8 0.4 10 0 10 -1 IF = 20 mA 94 7994 1000 950 λ - Wavelength (nm) Fig. 4 - Relative Radiant Power vs. Wavelength For technical questions, contact: [email protected] Document Number: 81133 Rev. 1.2, 29-Mar-10 T163VU Infrared Emitting Diode Chip, 950 nm, GaAs Vishay Semiconductors MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.37 Length of chip edge (y-direction) Ly 0.37 mm Emission area AE 0.34 x 0.34 mm2 Die height H 0.265 mm Diameter of bondpad d 0.14 mm ADDITIONAL INFORMATION mm (1) Frontside metallization, anode Aluminum Backside metallization, cathode Gold alloy Dicing Sawing Die bonding technology Epoxy bonding Note (1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Document Number: 81133 Rev. 1.2, 29-Mar-10 For technical questions, contact: [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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