SPICE Device Model Si5404BDC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73127 08-Sep-04 www.vishay.com 1 SPICE Device Model Si5404BDC Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data VGS(th) VDS = VGS, ID = 250 µA 1.1 ID(on) VDS ≥ 5 V, VGS = 4.5 V 100 VGS = 4.5 V, ID = 5.4 A 0.022 0.022 VGS = 2.5 V, ID = 2.6 A 0.030 0.031 Unit Static Gate Threshold Voltage On-State Drain Current a Drain-Source On-State Resistancea rDS(on) V A Ω Forward Transconductancea gfs VDS = 10 V, ID = 5.4 A 45 26 S Forward Voltagea VSD IS = 1.1 A, VGS = 0 V 0.78 0.70 V 6.8 7 VDS = 10 V, VGS = 4.5 V, ID = 5.4 A 1.7 1.7 2 2 Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 73127 08-Sep-04 SPICE Device Model Si5404BDC Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 73127 08-Sep-04 www.vishay.com 3