Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code AE XXX S Lot Traceability and Date Code N-Channel MOSFET Part # Code Bottom View Ordering Information: Si5404BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 7.5 5.4 5.4 3.9 IDM 20 2.1 1.1 2.5 1.3 1.3 0.7 TJ, Tstg −55 to 150 Soldering Recommendations (Peak Temperature)b, c Unit A W _C 260 THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 45 50 80 95 18 22 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73102 S-41826—Rev. A, 11-Oct-04 www.vishay.com 1 Si5404BDC New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.5 V VDS = 0 V, VGS = "12 V "100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 85_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 20 VDS w 5 V, VGS = 4.5 V rDS(on) mA A VGS = 4.5 V, ID = 5.4 A 0.022 0.028 VGS = 2.5 V, ID = 2.6 A 0.031 0.039 W gfs VDS = 10 V, ID = 5.4 A 26 S VSD IS = 1.1 A, VGS = 0 V 0.7 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 Rg 1.7 td(on) 12 20 12 20 25 40 10 20 20 40 Gate Resistance Turn-On Delay Time Rise Time 7 VDS = 10 V,, VGS = 4.5 V,, ID = 5.4 A tr Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr 1.7 VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) 11 IF = 1.1 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 3 V 2.5 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 8 2V 4 12 8 TC = 125_C 4 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 73102 S-41826—Rev. A, 11-Oct-04 Si5404BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 Ciss 1000 0.08 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.10 0.06 0.04 VGS = 2.5 V VGS = 4.5 V 0.02 800 600 400 Coss 200 Crss 0.00 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 5.4 A VGS = 4.5 V ID = 5.4 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.0 0.8 0 0 1 2 3 4 5 6 7 0.6 −50 8 −25 0 Qg − Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.06 ID = 5.4 A r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 20 I S − Source Current (A) 8 0.05 ID = 2.6 A 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 73102 S-41826—Rev. A, 11-Oct-04 1.2 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si5404BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 20 10 −0.4 −0.6 −50 −25 0 25 50 75 100 125 0 10−3 150 10−2 10−1 TJ − Temperature (_C) 10 100 600 Safe Operating Area 100 IDM Limited *rDS(on) Limited P(t) = 0.0001 10 I D − Drain Current (A) 1 Time (sec) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 73102 S-41826—Rev. A, 11-Oct-04 Si5404BDC New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73102. Document Number: 73102 S-41826—Rev. A, 11-Oct-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1