STMICROELECTRONICS MJB32B

MJB32B
®
PNP SILICON POWER TRANSISTOR
■
■
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICALLY SIMILAR TO TIP32B
APPLICATION
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■
3
DESCRIPTION
The
MJB32B
is
manufactured
using
Epitaxial-base Technology for use in medium
power linear and switching applications.
1
D2PAK
(TO-263)
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
-80
V
V CEO
Collector-Emitter Voltage (I B = 0)
-80
V
V EBO
Emitter-Base Voltage (I C = 0)
-5
V
Collector Current
-3
A
Collector Peak Current
-5
A
Base Current
-1
A
40
2
W
W
IC
I CM
IB
P tot
T stg
Tj
June 2001
Parameter
o
Total Dissipation at T case ≤ 25 C
T amb ≤ 25 o C
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
1/5
MJB32B
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
3.12
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CEO
Collector Cut-off
Current (I B = 0)
Parameter
V CE = -60 V
-50
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = -80 V
-20
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = -5 V
-0.1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) ∗
Test Conditions
I C = -30 mA
I C = -3 A
V BE ∗
Base-Emitter Voltage
I C = -3 A
V CE = -4 V
h FE ∗
DC Current Gain
I C = -1 A
I C = -3 A
V CE = -4 V
V CE = -4 V
Small Signall Current
Gain
I B = -375 mA
I C = -0.5 A V CE = -10 V
I C = -0.5 A V CE = -10 V
f = 1 KHz
f = 1 MHz
∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2%
Safe Operating Area
2/5
Typ.
-80
Collector-Emitter
Saturation Voltage
h fe
Min.
Derating Curves
25
10
20
3
V
-1.2
V
-1.8
V
50
MJB32B
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
3/5
MJB32B
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.036
B2
1.14
1.70
0.044
0.067
C
0.45
0.60
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
8.00
10.00
E1
0.368
0.315
10.40
0.393
8.50
0.409
0.334
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.40
1.75
0.055
0.068
M
2.40
3.2
0.094
0.126
8o
0o
R
V2
0.40
0o
- Weight : 1.38 g (typ.)
- The planaty of the slug must be within 30 µm
4/5
inch
MAX.
0.016
8o
P011P6/G
MJB32B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5