T1620W T1630W ® 16A SNUBBERLESS™ TRIAC A2 MAIN FEATURES Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600 and 800 V IGT 20 to 30 mA G A1 DESCRIPTION G Based on ST’ Snubberless technology providing high commutation performances, the T1620-600W/800W & T1630-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation performances, such as vacuum cleaners, heating regulation. They comply with UL standards (ref. E81734). A1 A2 ISOWATT220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM 2 I t dI/dt VDSM/VRSM IGM PG(AV) Tstg Tj Parameter Value Unit Tc= 80°C 16 A F = 50Hz t = 20ms 200 A F = 60Hz t = 16.7ms 218 RMS on-state current (Full sine wave) Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) 2 I t Value for fusing tp = 10 ms 220 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns F = 120 Hz Tj = 125°C 50 A/µs Non repetitive surge peak off-state voltage tp = 10ms Tj = 25°C VDRM/VRRM + 100 V Peak gate current tp = 20µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C Average gate power dissipation Storage junction temperature range Operating junction temperature range March 2004 - Ed: 2 1/5 T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) Test Conditions Quadrant VD=12V RL=30Ω VGT VGD IH (2) IL dV/dt VD=VDRM RL=3.3kΩ Tj = 125°C (dI/dt)c (2) T1630 Unit 20 30 mA I-II-III MAX. I-II-III MAX. 1.3 V I-II-III MIN. 0.2 V IT= 250mA MAX. 35 50 mA I - III MAX. 70 80 mA II MAX. 80 100 mA VD=67% VDRM Gate open Tj = 125°C MIN. 300 500 V/µs Without snubber Tj = 125°C MIN. 8.5 11 A/ms IG = 1.2IGT (2) T1620 STATIC CHARACTERISTICS Symbol VTM(2) Test Conditions MAX. 1.4 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd(2) Dynamic resistance Tj = 125°C MAX. 20 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 125°C MAX 5 1 µA mA VTO tp = 380µs Unit Tj = 25°C (2) ITM = 22.5 A Value Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 °C/W Rth(j-c) Junction to case (AC) 3.1 °C/W PRODUCT SELECTOR 2/5 Part Number Voltage Sensitivity Type Package T1620-600W 600V 20 mA Snubberless ISOWATT220AB T1620-800W 800V 20 mA Snubberless ISOWATT220AB T1630-600W 600V 30 mA Snubberless ISOWATT220AB T1630-800W 800V 30 mA Snubberless ISOWATT220AB T820W / T830W ORDERING INFORMATION T 16 xx - x00 W PACKAGE: W: ISOWATT220AB TRIAC SERIES CURRENT: 16A VOLTAGE: 600: 600V 800: 800V SENSITIVITY: 20: 20mA 30: 30mA OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode T1620-600W T1620600W 2.3 g 50 Tube T1620-800W T1620800W 2.3 g 50 Tube T1630-600W T1630600W 2.3 g 50 Tube T1630-800W T1630800W 2.3 g 50 Tube Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: RMS on-state current versus case temperature. P(W) IT(RMS)(A) 18 18 α=180° α=180° 16 16 14 14 12 12 10 10 8 8 6 6 180° 4 4 α α 2 2 Tc(°C) IT(RMS)(A) 0 0 0 2 4 6 8 10 12 14 16 Fig. 3: Relative variation of thermal impedance versus pulse duration. 0 25 50 75 100 125 Fig. 4: On-state characteristics (maximum values). ITM(A) K=[Zth/Rth] 100 1.E+00 Zth(j-c) 1.E-01 Tj=125°C Tj=25°C Zth(j-a) 10 1.E-02 tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 Tj max. : Vto = 0.85 V Rd = 20 mΩ VTM(V) 1.E+01 1.E+02 1.E+03 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3/5 T820W / T830W Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A) 2 2 ITSM(A), I t (A s) 220 10000 Tj initial=25°C 200 180 t=20ms Non repetitive Tj initial=25°C 160 dI/dt limitation: 50A/µs 140 120 1000 100 ITSM 80 Repetitive Tc=80°C 60 40 I²t 20 Number of cycles tp(ms) 0 100 1 10 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 0.01 0.10 1.00 10.00 Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c IGT, IH, IL[Tj] / IGT, IH, IL[Tj=25°C] 3.0 2.0 1.8 2.5 1.6 1.4 2.0 IGT 1.2 1.5 1.0 0.8 IH & IL 1.0 0.6 0.4 0.5 0.2 Tj(°C) 0.0 dV/dt (V/µs) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj=125°C] 8 7 6 5 4 3 2 1 Tj(°C) 0 0 4/5 25 50 75 100 125 0.1 1.0 10.0 100.0 T820W / T830W PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. ■ ■ Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 ■ Millimeters 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 Cooling method : C Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5