SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is intended for use in 50V dc large signal applications up to 200 MHz M244 epoxy sealed ORDER CODE BRANDING SD2922 SD2922 PIN CONNECTION 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Uni t Drain Source Voltage 125 V V DGR Drain-Gate Voltage (R GS = 1MΩ) 125 V V GS Gate-Source Voltage ±20 V Drain Current 40 A Power Dissipation 500 V (BR)DSS ID P DI SS Tj T STG Max. O perating Junction Temperature Storage T emperature W +200 o C -65 to 150 o C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case Heatsink Thermal Resistance ∗ 0.35 o C/W 0.12 o C/W ∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/13 SD2922 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Symb ol Parameter Min. V (BR)DSS V GS = 0 V IDS = 100 mA 125 I DSS V GS = 0 V VDS = 50 V 5 mA I GSS V GS = 20 V VDS = 0 V 5 µA V GS(Q) V DS = 10 V ID = 250 mA V DS(on) V GS = 10V I D = 10 A gfs V DS = 10V ID = 5 A C ISS V GS = 0V VDS = 50 V C OSS V GS = 0V C RSS V GS = 0V Typ . Max. Un it V 1 5 V 3 V 4 mho f = 1 MHz 411 pF VDS = 50 V f = 1 MHz 198 pF VDS = 50 V f = 1 MHz 27 pF REF. 1021306E DYNAMIC Symb ol Parameter Min. Typ . Max. Un it P OUT f = 175 MHz VDD = 50 V I DQ = 500 mA G PS f = 175 MHz VDD = 50 V P out = 300 W IDQ = 500 mA 12.5 15 dB ηD f = 175 MHz VDD = 50 V P out = 300 W IDQ = 500 mA 50 60 % Load f = 175 MHz VDD = 50 V Mismatch All Phase Angles P out = 300 W IDQ = 500 mA 5:1 300 IMPEDANCE DATA FREQ . Z IN (Ω) Z DL (Ω) 175 MHz 0.92 - j 0.14 3.17 + j 4.34 Measured Gate to Gate and Drain to Drain, respectively. 2/13 W VSW R SD2922 Maximum Thermal Resistance vs Case Temperature DC Safe Operating Area GC81900 100 GC83360 0. 42 50 Ids, DRAIN CURRENT (A) 30 Rth(j-c) (ºC/W) 0. 4 0. 38 20 (1) 10 5 0. 36 3 2 0. 34 25 45 65 85 1 1 Tc, Case Temperature (°C) 2 5 10 20 50 100 Vds, DRAIN S OURCE VO LTAGE (V) 200 500 1,000 (1) Current in this area may be limited by RDS(on) Two sides, each section equally loaded Drain Current vs Gate Voltage Capacitance vs Drain-Source Voltage GC81240 GC8125 0 12 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 10000 1000 Ciss Coss 100 Crss 10 VDS = 10V 8 Tc= 80 °C 6 Tc= 25 °C 4 Tc= -20° C 2 0 10 1 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 60 2 3 4 5 6 7 VGS GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (Normalized) Gate Voltage vs Case Temperature GC81260 1.15 1.1 Id = 5A Id = 2A 1.05 Id = 1A Id = 4A 1 0.95 0.9 0.85 -25 Id = 0.25A 0 25 50 Id = 0.1A 75 100 Tc, CASE TEMPERATURE (ºC) 3/13 SD2922 TYPICAL PERFORMANCE (175 MHz) Output Power vs Input Power Output Power vs Input Power GC81210 GC8120 0 400 Tc = -20°C Vdd = 50V Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 400 300 Vdd = 40V 200 100 f = 175 M Hz IDQ = 500 mA 0 300 Tc =25 °C Tc = 80 °C 200 VDD = 50V f = 175 MHz IDQ = 500 mA 100 0 1 3 5 7 9 11 13 1 3 Pin, INPUT POWER (W) Output Power vs Supply Voltage 7 9 11 GC812 30 GC81220 400 Pout, OUTPUTPOWER (W) Pin = 13W 300 ID Q = 500mA f = 175MHz Pin= 10W 200 Pin = 5W 100 0 25 4/13 13 Output Power vs Gate Voltage 400 Pout, OUTPUTPOWER (W) 5 Pin, INPUT POWER (W) 30 35 40 45 VDD, SUPPLY VOLTAGE (VOLTS) 50 Tc= 25° C Tc= -20° C 300 Tc= 80° C 200 VDD = 50 V IDQ = 50 0mA f = 1 75MHz Pin = Constant 100 0 -4 -3 -2 -1 0 1 2 VGS GATE-SOURCE VOLTAGE (VOLTS) 3 4 SD2922 175 MHz Test Circuit Schematic (Production Test Circuit) REF. 1022256B 5/13 SD2922 175 MHz Test Circuit Component Part List Component Part Number Vendor Description R1/R2 R3/R4 R5/R6 R7/R8 CR2412-1W-471JB R9/R10 C1/C4 C2/C7/C8 C17/C19 C20/C21 C3 C5 C6 C9/C10 C11-C12 C13 C14-C15 C24-C25 C16-C18 C22-C23 C26 C27 C28 B1 534 - 1 -1 - 203 ATC130B681KP50X ATC200B103MW50X 470 Ohm 1 W, Surface Mount Chip Resistor 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equiv. 470 Ohm 1 W, Surface Mount Chip Resistor 560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor SPECTROL 20 KOhm 3.09 W, 10 Turn Wirewound Precision Potentiometer ATC 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor ATC200B122MW50X ATC100B750KP500X 406 ATC100B470KP500X ATC100B430KP500X ATC ATC ARCO ATC ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor ST40 25 pF -115pF Miniature Variable Trimmer 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor ATC700B122MW50X ATC 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor ATC700B471MP200X GRM43-4X7R104K500 C1812X7R501-103KNE GRM43-4X7R-104K500 SME63T10RM ATC MURATA VENKEL MURATA MARCON 83242 BELDEN T2 UT141-25 L1 83242 MICRO COAX BELDEN FB1 2643665802 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor 0.1 µF / 500V Surface Mount Ceramic Chip Capacitor 0.01 µF/ 500V Surface Mount Ceramic Chip Capacitor 0.01 µF / 500V Surface Mount Ceramic Chip Capacitor 10 µF / 63 V Aluminum Electrolytic Axial Lead Capacitor 50 Ohm RG316, O.D. 0.076[1.93] L=11.80[299.72] Flexible Coaxial Cable 4 Turns thru Fair-rite Bead 50 Ohm RG-142B O.D 0.165[4.19] L=11.80[299.72] Flexible Coaxial Cable R.F. Transformer 4:1, 25 Ohm RG316-25, O.D 0.080[2.03] L=5.90[149.86] Flexible Coaxial Cable 2 Turns Thru Fair-rite Multi-aperture Core R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L=5.90[149.86] Inductor λ 1/4 Wave 50 Ohm O.D. 0.165[4.19] L=11.80[299.72] Flexible Coaxial Cable 2 Turns Thru Fair-rite Bead Shield Bead FB2 2843009902 FB3 2518068007 FB4 2743021447 FB5 2643801002 FB6 2843010402 PCB G0600M1016QA B2 CR2512-1W-471JB RS 2B VENKEL DALE VENKEL DALE T1 6/13 FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP ROGERS CORP Multi-aperture Core Multilayer Ferrite Chip Bead (Surface Mount) Surface Mount Emi Shield Bead Shield Bead Multi-aperture Core Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1oz EDCu, Both sides, εr = 2.55 SD2922 175 MHz Test Circuit Photomaster 175 MHz Text Fixture 7/13 SD2922 TYPICAL BROADBAND DATA (175 - 230 MHz) Input Power vs Frequency Power Gain vs Frequency GC81920 16 Gp, POWER GAIN (dB) 10 Pin, INPUT POWER (W) GC81930 17 12 8 6 Vdd=50V I dq=600mA Pout=250W Vdd=50V Idq=600mA Pout=250W 15 14 13 4 2 170 180 190 200 210 220 12 170 230 180 190 FREQUENCY (MHz) 200 210 220 230 FREQUE NCY (MHz) Efficiency vs Frequency Return Loss vs Frequency GC81950 GC81940 -2 70 -4 RTL, RETURN LOSS (dB) EFFICIENCY (%) 67.5 Vdd=50V I dq=600mA Pout=250W 65 62.5 60 57.5 -6 -8 -10 -12 Vdd=50V Idq=600mA Pout=250W -14 -16 -18 55 170 180 190 200 210 220 -20 170 230 180 190 200 210 220 1 dB Compression 1 dB Compression GC81960 GC81970 15.5 Vdd=50V Idq=600mA Freq=175MHz Gp, POWER GAIN (dB) Gp, POWER GAIN (dB) 15.5 14.5 13.5 12.5 14.5 Vdd=50V Idq=600mA Freq=230MHz 13.5 12.5 0 100 200 Pout, OUTPUT POWER (W) 8/13 230 FREQUENCY (MHz) FREQUENCY (MHz) 300 400 0 100 200 Pout, OUTPUT POWER (W) 300 400 SD2922 175 - 230 MHz Circuit Layout (Engineering Fixture) 175 -230 MHz Circuit Layout Component Part List PCB 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er =4.8 T1 50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE T2 / T3 9:1 Transformer, 16.5 Ohm Flexible Coax Cable OD 0.1”, 3” Long T4 / T5 4:1Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long C1 8.2 pF Ceramic Cap C2/C3 100 pF Chip Cap C4 2-18 pF Variable Cap C5 47 pF Ceramic Cap C6 / C11 47 nF Ceramic Cap C7 56 pF ATC Chip Cap C8 / C9 / C13 470 pF ATC Chip Cap C10 100 nF Ceramic Cap C12 2x330 nF / 500 V Cap C14 10 nF / 63 V Electrolytic Cap R1 / R3 47 Ohm Resistor R2 6.8K Ohm Chip Resistor R4 4.7K Ohm MultiTurns Trim Resistor R5 8.2K Ohm Resistor R6 3.3K Ohm / 5 W Resistor D1 6.8 V Zener Diode L1 20 nH Inductor L2 70 nH Inductor L3 30 nH Inductor L4 10 nH Inductor L5 15 nH Inductor 9/13 SD2922 TYPICAL BROADBAND DATA (88 - 108 MHz) Input Power vs Frequency Power Gain vs Frequency GC81980 GC81990 22 21 6 Gp, POWER GAIN (dB) Pin, INPUT POWER (W) 7 Vdd=50V Idq=400mA Pout=300W 5 4 3 2 20 19 18 17 16 Vdd=50V Idq=400mA Pout=300W 15 14 13 1 12 85 90 95 100 105 110 85 90 FREQUENCY (MHz) 95 100 105 110 FREQUENCY (MHz) Efficiency vs Frequency Return Loss vs Frequency GC82000 70 GC82010 -2 -4 RTL, RETURN LOSS (dB) EFFICIENCY (%) 67 64 61 Vdd=50V Idq=400mA Pout=300W 58 -6 Vdd=50V I dq=400mA Pout=300W -8 -10 -12 -14 -16 -18 -20 85 55 85 90 95 100 FREQUENCY (MHz) 10/13 105 110 90 95 100 FREQUENCY (MHz) 105 110 SD2922 88 - 108 MHz Circuit Layout (Engineering Fixture) 88 -108 MHz Circuit Layout Component Part List PCB 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er =4.8 T1 50 Ohm Flexible Coax Cable OD 0.06”, 5” Long T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE T4 / T5 4:1Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long T6 50 Ohm Flexible Coax Cable OD 0.1”, 5” Long FB1 VK200 C1 10 pF Ceramic Cap C2 / C3 / C4 / C7 / C8 1 nF Chip Cap C5 / C6 1 nF ATC chip Cap C9 470 pF ATC Chip Cap C10 100 nF Chip Cap C11 100 uF / 63 V Electrolytic Cap R1 56 Ohm Resistor R2/R4 10 Ohm Chip Resistor R3 10K Ohm Resistor R5 5.6K Ohm Resistor R6 10K Ohm, 10 Turn Trim Resistor R7 3.3K Ohm / 5 W Resistor R8 15 Ohm / 1 W Resistor D1 6.8 V Zener Diode L1 10 nH Inductor L2 40 nH Inductor L3 70 nH Inductor 11/13 SD2922 M244 (.400 x .860 4/L BAL N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. A TYP. 5.59 B inch MAX. MIN. 5.84 0.220 5.33 MAX. 0.230 0.210 C 3.05 3.30 0.120 0.130 D 9.65 9.91 0.380 0.390 E 19.81 20.83 0.780 0.820 F 11.05 0.435 G 27.94 1.100 H 33.91 34.16 1.335 1.345 I 0.08 0.18 0.003 0.007 J 1.52 1.78 0.060 0.070 K 2.54 2.92 0.100 0.115 L 5.84 0.230 M 10.03 10.34 0.395 0.407 N 21.59 22.10 0.850 0.870 Note: Controlling dimension in Inches 12/13 TYP. 1020876A SD2922 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 13/13