PD55008 - PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD55008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies of up to 1GHz. PD55008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55008’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD55008 PD55008 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD55008S XPD55008S ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 40 V V GS Gate-Source Voltage ±20 V 4 A Power Dissipation (@ Tc = 70 C) 52.8 W Max. Operating Junction Temperature 165 OC -65 to 165 OC 1.8 OC/W ID PDISS Tj TSTG Drain Current 0 Storage Temperature THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1/10 PD55008 - PD55008S ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA V GS(Q) VDS = 10 V ID = 150 mA 5.0 V VDS(ON) VGS = 10 V ID = 1.5 A 1.0 V gFS VDS = 10 V ID = 1.5 A C ISS VGS = 0 V VDS = 12.5 V COSS VGS = 0 V C RSS VGS = 0 V 2.0 1.6 mho f = 1 MHz 58 pF VDS = 12.5 V f = 1 MHz 39 pF VDS = 12.5 V f = 1 MHz 2.6 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz VDD = 12.5 V IDQ = 150 mA GPS f = 500 MHz VDD = 12.5 V POUT = 8 W IDQ = 150 mA 17 dB ηD f = 500 MHz VDD = 12.5 V POUT = 8 W IDQ = 150 mA 55 % f = 500 MHz VDD = 15.5 V ALL PHASE ANGLES POUT = 8 W IDQ = 150 mA LOAD Mismatch 8 W 20:1 VSWR D PIN CONNECTION SOURCE ZDL GATE Typical Input Impedance DRAIN Typical Drain Load Impedance G Zin SC15200 IMPEDANCE DATA PD55008S PD55008 2/10 S SC13140 Frequency MHz Zin Zdl Ω Frequency MHz Zin Zdl 520 1.649 - j1.965 1.716 - j1.552 520 1.586 - j2.087 3.082 + j2.043 500 1.589 - j1.185 1.561 - j2.639 500 1.409 - j3.448 2.129 + j3.219 480 1.141 - j2.054 1.649 - j2.916 480 1.075 - j2.727 2.046 +j1.960 Ω Ω Ω PD55008 - PD55008S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage 8 1000 7 100 Id, DRAIN CURRENT (A) C, CAPACITANCES (pF) f=1MHz Ciss Coss 10 6 5 4 3 2 VDS =10V Crss 1 1 0 0 5 10 15 20 25 VDD, DRAIN VOLTAGE (V) 1 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V ) VGS, GATE-SOURCE VOLTAGE(NORMALIZED) Gate-Source vs. Case Temperature 1.06 1.04 1.02 1 ID =2A 0.98 ID = 1.5A ID =1A 0.96 VDS =10V ID =.5A 0.94 0.92 -25 ID = .25A 0 25 50 75 100 Tc, CASE TEMPERATURE (°C) 3/10 PD55008 - PD55008S TYPICAL PERFORMANCE PD55008 Output Power vs. Input Power Power Gain vs. Output Power 22 14 480MHz 12 20 520MHz Pg, POWER GAIN (dB) Pout, OUTPUT POWER (W) 500MHz 10 8 6 4 VDD =12.5V IDQ=150mA 2 480MHz 18 16 520MHz 500MHz 14 12 10 VDD =12.5V IDQ=150mA 8 6 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 0.9 2 4 6 8 10 12 Pout, OUTPUT POWER (W) Pin, INPUT POWER (W) Drain Efficiency vs. Output Power Input Return Loss vs. Output Power 80 0 520MHz 60 Rtl, INPUT RETURN LOSS (dB) Nd, DRAIN EFFICIENCY (%) 70 500MHz 50 480MHz 40 30 20 VDD =12.5V IDQ =150 mA 10 0 -10 500MHz -20 480MHz -30 VDD =12.5V IDQ =150mA 520MHz -40 0 2 4 6 8 10 12 0 Pout, OUTPUT POWER (W) Output Power vs. Bias Current 2 4 6 8 10 12 Pout, OUTPUT POWER (W) Drain Efficiency vs. Bias Current 70 12 480MHz 8 500MHz 520MHz 6 4 VDD=12.5V Pin=21.7dBm 2 60 520MHz 50 480MHz 40 30 VDD =12.5V Pin=21.7 dBm 20 10 0 0 100 200 300 400 500 600 700 800 IDQ, BIAS CURRENT (mA) 4/10 Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 500MHz 10 0 100 200 300 400 500 600 700 IDQ, BIAS CURRENT (mA) 800 PD55008 - PD55008S TYPICAL PERFORMANCE Output Power vs. Supply Voltage Drain Efficency vs. Supply Voltage 70 13 500MHz 480 MHz 11 Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 12 500 MHz 10 9 520MHz 8 7 6 5 Idq=150mA Pin=21.7 dBm 4 60 480MHz 50 520MHz 40 30 Idq=150mA Pin=21.7 dBm 20 3 9 10 11 12 13 14 9 15 10 Output Power vs. Gate-Source Voltage 13 14 15 PD55008S 14 500MHz 480MHz 12 10 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 12 Output Power vs. Input Power 12 8 500MHz 6 520MHz 4 2 VDD =12.5 V Pin=21.7 dBm 0 1 2 3 480MHz 520MHz 10 8 6 4 VDD=12.5V IDQ=150mA 2 0 0 4 0 0.1 VGS, GATE-SOURCE VOLTAGE (V) 0.2 0.3 0.4 0.5 Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 22 80 520MHz 20 70 480MHz Nd, DRAIN EFFICIENCY (%) Pg, POWER GAIN (dB) 11 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) 18 500MHz 16 14 12 10 VDD =12.5V IDQ=150mA 8 520 MHz 60 500MHz 50 480MHz 40 30 20 VDD= 12.5V IDQ= 150 mA 10 6 0 0 2 4 6 8 10 Pout, OUTPUT POWER (W) 12 14 0 2 4 6 8 10 12 Pout, OUTPUT POWER (W) 5/10 PD55008 - PD55008S TYPICAL PERFORMANCE Input Return Loss vs. Output Power Output Power vs. Bias Current 12 10 520MHz -10 500MHz Pout, OUTPUT POWER (W) Rtl, INPUT RETURN LOSS (dB) 0 480MHz -20 -30 VDD =12.5V IDQ=150mA 2 4 6 8 10 8 500MHz 6 520MHz 4 VDD=12.5V Pin=21 dBm 2 -40 0 480MHz 0 12 0 100 200 Pout, OUTPUT POWER (W) Drain Efficiency vs. Bias Current 600 700 800 10 520MHz Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY (%) 500 11 60 50 500MHz 40 480MHz 30 VDD=12.5V Pin=21dBm 20 9 480MHz 520MHz 8 500MHz 7 6 5 520MHz Idq=150mA Pin=21dBm 4 10 3 0 100 200 300 400 500 600 700 800 9 10 11 IDQ, BIAS CURRENT (mA) 12 13 14 15 VDD, SUPPLY VOLTAGE (V) Drain Efficency vs. Supply Voltage Output Power vs. Gate-Source Voltage 12 60 520MHz 10 Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY (%) 400 Output Power vs. Supply Voltage 70 50 500MHz 40 480 MHz 30 Idq=150 mA Pin= 21dBm 8 480MHz 6 500MHz 4 520MHz 2 20 VDD=12.5V Pin=21dBm 0 9 10 11 12 13 VDD, SUPPLY VOLTAGE (V) 6/10 300 IDQ, BIAS CURRENT (mA) 14 15 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) 4 PD55008 - PD55008S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 SHORT FERRITT BEAD, FAIR RITE PRODUCTS (2743021446) R4 33KΩ, 1/8 W RESISTOR C1,C12 240pF, 100 mil CHIP CAPACITOR Z1 0.451” X 0.080” MICROSTRIP C2,C3,C10,C11 0 to 20 pF TRIMMER CAPACITOR Z2 1.005” X 0.080” MICROSTRIP C4 82pF, 100 mil CHIP CAP Z3 0.020” X 0.080” MICROSTRIP C5,C16 120pF, 100 mil CHIP CAP Z4 0.155” X 0.080” MICROSTRIP C6,C13 10µF, 50V ELECTROLYTIC CAPACITOR Z5,Z6 0.260” X 0.223” MICROSTRIP C7,C14 1.200pF mil CHIP CAP Z7 0.065” X 0.080” MICROSTRIP C8,C15 0.1 F, 100 mil CHIP CAP Z8 0.266” X 0.080” MICROSTRIP C9 30pF, 100 mil CHIP CAP Z9 1.113” X 0.080” MICROSTRIP L1 55.5 nH, TURN, COILCRAFT Z10 0.433” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM 2000 R1 15 Ω, 0805 CHIP RESISTOR THK 0.030” εr = 2.55 R2 51 Ω, 1/2 W RESISTOR 2oz ED Cu 2 SIDES R3 10 Ω, 0805 CHIP RESISTOR 7/10 PD55008 - PD55008S TEST CIRCUIT 4 inches TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 PD55008 - PD55008S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD55008 - PD55008S Information furnished is believed to be accurate and reliable. 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