SD2921 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is intended for use in 50V dc large signal applications up to 200 MHz M174 epoxy sealed ORDER CODE BRANDING SD2921 SD2921 PIN CONNECTION 1. Drain 2. Source 3.Gate 4. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Uni t Drain Source Voltage 125 V V DGR Drain-Gate Voltage (R GS = 1MΩ) 125 V V GS Gate-Source Voltage ±20 V Drain Current 16 A Power Dissipation 292 W Max. O perating Junction Temperature 200 o C -65 to 150 o C V (BR)DSS ID P DI SS Tj T STG Storage Temperature THERMAL DATA R th (j-c) R th(c -s) Junction-Case T hermal Resistance Case-Heatsink T hermal Resistance ∗ 0.6 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/10 SD2921 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol Parameter Min. 125 Typ . Max. Un it V (BR)DSS V GS = 0V I DS = 100 mA I DSS V GS = 0V V DS = 50 V 5 mA I GSS V GS = 20V V DS = 0 V 5 µA V GS(Q) V DS = 10V I D = 250 mA 5.0 V V DS( ON) V GS = 10V ID = 10 A G FS V DS = 10V ID = 5 A C ISS V GS = 0V V DS = 50 V f = 1 MHz 411 pF C OSS V GS = 0V V DS = 50 V f = 1 MHz 198 pF C RSS V GS = 0V V DS = 50 V f = 1 MHz 27 pF V 1.0 3.0 4 V mho DYNAMIC Symb ol Parameter Min. P OUT f = 175 MHz V DD = 50 V I DQ = 250 mA G PS f = 175 MHz V DD = 50 V P ou t = 150 W IDQ = 250 mA ηD f = 175 MHz V DD = 50 V P ou t = 150 W Load f = 175 MHz V DD = 50 V Mismatch All Phase Angles P ou t = 150 W Typ . 150 Max. Un it W 12.5 14 IDQ = 250 mA 55 65 IDQ = 250 mA 10:1 dB % VSW R REF. 1021304K IMPEDANCE DATA 2/10 FREQ . Z IN (Ω) Z DL (Ω) 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 SD2921 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power 300 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 250 Vdd = 50V 200 Vdd = 40V 150 100 Tc = 25°C f = 175 MHz IDQ = 250mA 50 Tcase = -20°C 250 Tcase = 25°C 200 Tcase = 80°C 150 100 IDQ = 250 mA VDD = 50V f = 175MHz 50 0 0 1 4 7 10 13 16 19 1 3 5 Pin, INPUT POWER (W) 9 11 13 15 17 19 Output Power vs Gate Voltage 200 200 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (WATTS) Output Power vs Supply Voltage Pin = 9W 150 Pin = 6W 100 Pin = 3W 50 IDQ = 250mA f = 175MHz 24 28 32 36 40 44 VDD = 50V IDQ = 250mA f = 175MHz Pin = Constant 150 T = -20° C T = 25° C 100 T = 80° C 50 0 0 48 -3 VDD, SUPPLY VOLTAGE (VOLTS) -2 -1 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (VOLTS) Capacitance vs Drain-Source Voltage Drain Current vs Gate Voltage 10000 15 ID, DRAIN CURRENT (A) C, CAPACITANCE(pF) 7 Pin, INPUT POWER (W) 1000 Ciss Coss 100 Crss T = -20°C 10 T = 25°C T = 80°C 5 VDS = 10V 0 10 0 10 20 30 40 VDS,DRAIN-SOURCE VOLTAGE (VOLTS) 50 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS ) 3/10 SD2921 TYPICAL PERFORMANCE Output Power vs Gate Voltage 200 1.1 Tfl= 25°C Pout, OUTPUT POWER (W) VGS, GATE-SOURCE VOLTAGE (NORMALIZED Gate-Source Voltages vs Case Temperature 1.05 Id = 5A 1 Id = 4A Id = 2A Id = 1A Id = .25A 0.95 0.9 Id = .1A Tfl= -2 0°C 150 VDD= 50 V IDQ= 250 m A f = 30MHz FixedPin 100 Tfl= 80°C 50 VDS = 10V 0.85 -25 0 25 50 75 0 100 0 Tc, CASE TEMPERATURE (°C) 1 2 3 4 VGS GATE-SOURCE VOLTAGE (V) 5 6 SC 13 21 0 Power Gain vs Output Power Output Power vs Input Power 250 Pout, OUTPUT POWER(W) PG, POWER GAIN (dB) 26.5 26 25.5 25 f =30 MHz VDD= 50 V IDQ= 250 mA 200 VDD= 50 V 150 VDD= 40 V 100 50 f = 30 MHz IDQ= 250 m A 24.5 0 50 100 Pout, OUTPUT POWER (W) 150 0 200 0.02 0.1 SC13170 Efficiency vs Output Power 0.18 0.26 0.34 0.42 Pi n, INPUT POWER (W) 0.5 0.58 0.66 SC13180 Output Power vs Voltage Supply 200 Pin= 0.6W Pout, OUTPUT POWER (W) Efficiency(%) 60 40 20 f= 30MHz VDD= 50 V IDQ= 250 mA Pin= 0.4W 150 100 Pin= 0.2W 50 f = 30 MHz IDQ= 250 mA 0 0 4/10 50 100 Pout, OUTPUTPOWER (W) 150 200 SC13190 0 24 28 32 36 40 44 VDD, SU PPLY VOLTAGE (V) 48 SC1 32 00 SD2921 Maximum Thermal Resistance vs Case Temperature DC Safe Operating Area 100 0.75 30 0.7 20 Ids(A) RTH(j-c) (ºC/W) 50 0.65 (1) 10 5 0.6 3 2 0.55 25 45 65 Tc, CASE TEMPERATURE (ºC) 85 1 1 2 5 10 20 50 100 200 Vds(V) (1) Current in this area may be limited by Rds(on) 5/10 SD2921 30 MHz Test Circuit Schematic (Engineering Test Circuit) VG + +50V 30 MHz Test Circuit Component Part List T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15” Long T2 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15” Long FB1 Toroid, 1.7” OD .30” ID 220u 4 Turns FB2 Surface Mount EMI Shield Bead FB3 Toroid, 1.7” OD .300” ID 220u 3 Turns RFC1 Toroid, 0.5” OD 0.30” ID, 125u 4 turns 12 awg wire PCB 0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 C1, C4, C6, C7, C8, 0.01 uF ATC Chip Cap C5 470 pF ATC Chip Cap C9, C11, C12, C13 0.01 uF ATC Chip Cap C10 10 uF 63V Electrolytic Capacitor C2, C3 750 pF ATC Chip Cap C14 100 uF 63V Electrolytic Capacitor R1, R3 1K ohm 1W Chip Resistor R2 680 ohm 3W Wirewound Resistor 6/10 SD2921 175 MHz Test Circuit Schematic (Production Test Circuit) VG Note : All dimensions in inches +50V REF. 1021579C 175 MHz Test Circuit Component Part List T1 T2 FB1 FB2, FB3 FB4 L1 PCB R1, R3 R2 C1, C11 C2 C3, C8, C9 C4 C5 C6 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6 ” Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6 ” Long Toroid X 2, 0.5” OD .312” ID 850u 2 Turns VK200 Shield Bead, 1” OD 0.5” ID 850u 3 Turns 1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 ” Long 0.062” Woven Fiberglass, 1 oz. Copper, 2 Sides, er = 2.55 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor 470 pF ATC Chip Cap C7 30 pF ATC Chip Cap 43 pF ATC Chip Cap C10 91 pF ATC Chip Cap Arco 404, 12-65 pF C12, C15 1200 pF ATC Chip Cap Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap 120 pF ATC Chip Cap C16, C17 0.01 uF / 500V Chip Cap 0.01 uF ATC Chip Cap C18 10 uF 63V Electrolytic Capacitor 7/10 SD2921 175 MHz Test Circuit Photomaster 175 MHz Test Circuit 8/10 SD2921 M174 (.500 DIA 4L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. A TYP. 5.56 B inch MAX. MIN. 5.84 0.219 3.18 TYP. MAX. 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 Controlling Dimension in Inches 1011000D 9/10 SD2921 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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