PD57045
PD57045S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 13 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57045 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045’s superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
BRANDING
PD57045
XPD57045
PowerSO-10RF
(Straight Lead)
ORDER CODE
BRANDING
PD57045S
XPD57045S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)
Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
V GS
Gate-Source Voltage
±20
V
5
A
Power Dissipation (@ Tc = 70 C)
73
W
Max. Operating Junction Temperature
165
0C
ID
PDISS
Tj
TSTG
Drain Current
0
Storage Temperature
0
-65 to 165
C
THERMAL DATA (TCASE = 70 0C)
R th(j-c)
May 2000
Junction-Case Thermal Resistance
1.3
0
C/W
1/8
PD57045 PD57045S
ELECTRICAL SPECIFICATION(TCASE = 25 0C)
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V
IDS = 1 mA
IDSS
VGS = 0 V
VDS = 28 V
1
µA
IGSS
VGS = 20 V
VDS = 0 V
1
µA
V GS(Q)
VDS = 28 V
ID = 250 mA
5.0
V
VDS(ON)
VGS = 10 V
ID = 3 A
0.9
V
gFS
VDS = 10 V
ID = 5 A
C ISS
VGS = 0 V
VDS = 28 V
COSS
VGS = 0 V
C RSS
VGS = 0 V
65
V
2.0
0.7
2.0
2.7
mho
f = 1 MHz
86
pF
VDS = 28 V
f = 1 MHz
47
pF
VDS = 28 V
f = 1 MHz
3.6
pF
DYNAMIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
POUT
VDD = 28 V
f = 945 MHz
IDQ = 250 mA
GPS
VDD = 28 V
f = 945 MHz
POUT = 45 W
IDQ = 250 mA
13
ηD
VDD = 28 V
f = 945 MHz
POUT = 45 W
IDQ = 250 mA
50
%
VDD = 28 V
f = 945 MHz
ALL PHASE ANGLES
POUT = 45 W
IDQ = 250 mA
10:1
VSWR
LOAD
Mismatch
45
W
14.5
dB
D
PIN CONNECTION
SOURCE
ZDL
Typical Input
Impedance
GATE
Typical Drain
Load Impedance
DRAIN
G
Zin
S
SC13140
SC15200
IMPEDANCE DATA
PD57045S
2/8
Frequency
MHz
Zin
Zdl
945
.80 + j 1.24
1.66 - j.44
Ω
Ω
PD57045 PD57045S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Drain Current vs. Gate Voltage
1000
4
3.5
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
f=1 MHz
Ciss
100
Coss
10
Crss
Vds=10V
3
2.5
2
1.5
1
0.5
1
0
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Gate-Source Voltage vs. Case Temperature
1.04
1.02
ID =3A
ID =2A
1
ID =1.5A
ID =1 A
0.98
VDS =10 V
ID =.25A
0.96
-25
0
25
50
75
Tc, CASE TEMPERATURE (°C)
3/8
PD57045 PD57045S
TYPICAL PERFORMANCE - PD57045S
Output Power and Power Gain vs. Input Power
60
17
16
Pout
Idq= 450mA
15
40
14
30
13
20
12
VDD =28 V
IDQ =250 mA
f= 945 MHz
10
0
16
Gp, POWER GAIN (dB)
50
Gp, POWER GAIN (dB)
Gp
Pout, OUTPUT POWER (W)
Power Gain vs. Output Power
0.5
1
1.5
2
2.5
3
Idq= 150mA
14
13
12
Idq= 75mA
11
10
3.5
0.1
1
Pin, INPUT POWER (W)
0
50
Rtl, RETURN LOSS (dB)
Nd, DRAIN EFFICIENCY (%)
100
Return Loss vs. Output Power
60
40
30
20
f= 945MHz
Vdd=28V
Idq=250mA
10
-10
-20
-30
f= 945 MHz
Vdd= 28V
Idq=250mA
0
-40
0
10
20
30
40
50
60
0
10
Pout, OUTPUT POWER (W)
20
30
40
50
60
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
60
70
Nd, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (W)
10
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
50
40
30
Pin=1.5W
Vdd= 28V
f= 945 MHz
20
60
50
40
Pin= 1.5W
Vdd= 28V
f=945 MHz
30
0
200
400
600
800
Idq, BIAS CURRENT (mA)
4/8
Vdd= 28V
f= 945Mhz
11
10
0
Idq= 250mA
15
1000
0
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
PD57045 PD57045S
TYPICAL PERFORMANCE PD57045S
Output Power vs. Drain Voltage
Output Power vs. Gate Bias Voltage
80
50
Pout, OUTPUT POWER (W)
f=945MHz
Vdd= 28V
Idq=250mA
60
Pout, OUTPUT POWER (W)
Pin=3W
70
Pin= 2W
Pin= 1.5W
50
40
Pin= 1W
30
40
30
20
Pin= 1.5W
Vdd= 28V
f=945MHz
10
20
10
0
16
18
20
22
24
26
28
30
32
34
0
VDS, DRAIN-SOURCE VOLTAGE (V)
0.5
1
1.5
2
2.5
3
3.5
4
VGS, GATE BIAS VOLTAGE (V)
4 inches
TEST CIRCUIT PHOTOMASTER
6.4 inches
5/8
PD57045 PD57045S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
L1
INDUCTOR, 5TURNS AIR WOUND #22AWG,
ID=0.059{1.49}, NYLON COATED MAGNET WIRE
C7
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
L2
INDUCTOR, 5TURNS AIR WOUND #22AWG,
ID=0.059{1.49}, NYLON COATED MAGNET WIRE
C8
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
FB1
SHIELD BEAD SURFACE MOUNT EMI
C9
0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR
FB2
SHIELD BEAD SURFACE MOUNT EMI
C10
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
R1
18K OHM, 1W SURFACE MOUNT CHIP RESISTOR
C11
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
R2
4.7M OHM, 1W SURFACE MOUNT CHIP RESISTOR
C12
1000pF ATC 700B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
R3
120 OHM,2W SURFACE MOUNT CHIP RESISTOR
C13
0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C1
3pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C14
10µF/50V ALUMINNUM ELECTROLYTIC RADIAL LEAD
CAPACITOR
C2
3pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C15
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C3
47pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C16
100pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C4
0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR
C17
0.1µF/500V SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C5
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
C18
220µF/63V ALUMINUM ELECTROLYTIC RADIAL LEAD
CAPACITOR
C6
7.5pF ATC 100B SURFACE MOUNT CERAMIC CHIP
CAPACITOR
Board
ROGER, ULTRA LAM 2000 THK 0.030”
Cu 2 SIDES
6/8
εr = 2.55 2oz ED
PD57045 PD57045S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
7/8
PD57045 PD57045S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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