SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2932 is intended for use in 50V dc large signal applications up to 250 MHz M244 epoxy sealed ORDER CODE BRANDING SD2932 TSD2932 PIN CONNECTION 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Value Uni t Drain Source Voltage 125 V Drain-Gate Voltage (R GS = 1MΩ) Gate-Source Voltage 125 V ±20 V Drain Current 40 A Power Dissipation 500 Max. O perating Junction Temperature +200 o C -65 to 150 o C Storage Temperature W THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case Heatsink Thermal Resistance ∗ 0.35 o C/W 0.12 o C/W ∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). March 2000 1/13 SD2932 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (per section) Parameter Min. V (BR)DSS Symb ol V GS = 0 V I DS = 100 mA 125 I DSS V GS = 0 V V DS = 50 V I GSS V GS = 20 V V DS = 0 V V GS(Q) V DS = 10 V I D = 250 mA V DS(on) V GS = 10V ID = 10 A Typ . Max. Un it V 2 5 mA 5 µA 5 V 3 V gfs V DS = 10V ID = 5 A C ISS V GS = 0V V DS = 50 V f = 1 MHz 480 pF C OSS V GS = 0V V DS = 50 V f = 1 MHz 190 pF C RSS V GS = 0V V DS = 50 V f = 1 MHz 18 pF 5 mho REF.7163911A DYNAMIC Symb ol Parameter Min. P OUT f = 175 MHz V DD = 50 V I DQ = 500 mA G PS f = 175 MHz V DD = 50 V P out = 300 W IDQ = 500 mA ηD f = 175 MHz V DD = 50 V P out = 300 W Load f = 175 MHz V DD = 50 V Mismatch All Phase Angles P out = 300 W Typ . 300 16 IDQ = 500 mA 50 60 IDQ = 500 mA 5:1 FREQ . Z IN (Ω) Z DL (Ω) 175 MHz 0.92 - j 0.14 3.17 + j 4.34 Measured Gate to Gate and Drain to Drain, respectively. 2/13 Un it W 15 IMPEDANCE DATA Max. dB % VSW R SD2932 Maximum Thermal Resistance vs Case Temperature DC Safe Operating Area 0.42 Ids, DRAIN CURRENT (A) 100 Rth(j-c) (ºC/W) 0.4 0.38 0.36 (1) 10 1 1 0.34 25 30 35 40 45 50 55 60 65 70 75 80 85 Tc, Case Temperature (°C) 10 100 1000 Vds, DRAIN SOURCE VOLTAGE (V) (1) Current in this area may be limited by RDS(on) Two sides, each section equally loaded Capacitance vs Drain-Source Voltage Drain Current vs Gate Voltage 20 ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) 10000 1000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Gate Voltage vs Case Temperature 1.15 1.1 Id=5 A Id=9 A Id=10 A Id=7 A 1.05 Id=11 A 1 0.95 Id=4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 -25 0 25 50 75 100 Tcase, CASE TEMPERATURE (°C) 3/13 SD2932 TYPICAL PERFORMANCE (175 MHz) Output Power vs Input Power Output Power vs Input Power 600 T=-20 °C Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 500 Vdd=50 V 400 300 Vdd=40 V 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 Pin, INPUT POWER (W) 10 12 14 16 18 20 22 Efficiency vs. Output Power 17 80 16 70 Nc, EFFICIENCY (%) Gp, POWER GAIN (dB) Power Gain vs. Output Power 15 14 13 12 Vdd=50V Idq=2 x 250mA F=175Mhz 11 8 Pin, INPUT POWER(W) 60 50 40 30 Vdd=50V Idq=2 x 250mA F=175Mhz 20 10 10 0 100 200 300 400 0 500 100 Pout, OUTPUT POWER (W) 200 300 400 500 Pout, OUTPUT POWER (W) Output Power vs Supply Voltage Output Power vs Gate Voltage 450 400 Pin=15.6 W 350 300 Pin=7.8 W 250 200 150 Pin=3.9 W 100 300 T=-20 °C T=+80 °C 200 100 Vdd=50V Idq=2 x 250mA F=175Mhz 0 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Vdd,DRAIN VOLTAGE (V) 4/13 Pout, OUTPUT POWER (W) Pout,OUTPUT POWER (W) T=+25 °C 400 Idq=2 x 250mA F=175Mhz -3 -2 -1 0 1 2 VGS, GATE_SOURCE VOLTAG E (V) 3 SD2932 175 MHz Test Circuit Schematic (Production Test Circuit) REF. 1022256B 5/13 SD2932 175 MHz Test Circuit Component Part List Component Part Number Vendor Description R1/R2 R3/R4 R5/R6 R7/R8 CR2412-1W-471JB R9/R10 C1/C4 C2/C7/C8 C17/C19 C20/C21 C3 C5 C6 C9/C10 C11-C12 C13 C14-C15 C24-C25 C16-C18 C22-C23 C26 C27 C28 B1 534 - 1 -1 - 203 ATC130B681KP50X ATC200B103MW50X 470 Ohm 1 W, Surface Mount Chip Resistor 360 Ohm 0.5 W, Carbon Comp. Axial Lead Resistor or Equiv. 470 Ohm 1 W, Surface Mount Chip Resistor 560 Ohm 2 W, Resistor Two Turn Wire Air-Wound Axial Lead Resistor SPECTROL 20 KOhm 3.09 W, 10 Turn Wirewound Precision Potentiometer ATC 680 pF ATC 130B Surface Mount Ceramic Chip Capacitor ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor ATC200B122MW50X ATC100B750KP500X 406 ATC100B470KP500X ATC100B430KP500X ATC ATC ARCO ATC ATC 10000 pF ATC 200B Surface Mount Ceramic Chip Capacitor 75 pF ATC 100B Surface Mount Ceramic Chip Capacitor ST40 25 pF -115pF Miniature Variable Trimmer 47 pF ATC 100B Surface Mount Ceramic Chip Capacitor 43 pF ATC 100B Surface Mount Ceramic Chip Capacitor ATC700B122MW50X ATC 1200 pF ATC 700B Surface Mount Ceramic Chip Capacitor ATC700B471MP200X GRM43-4X7R104K500 C1812X7R501-103KNE GRM43-4X7R-104K500 SME63T10RM ATC MURATA VENKEL MURATA MARCON 83242 BELDEN T2 UT141-25 L1 83242 MICRO COAX BELDEN FB1 2643665802 470 pF ATC 700B Surface Mount Ceramic Chip Capacitor 0.1 µF / 500V Surface Mount Ceramic Chip Capacitor 0.01 µF/ 500V Surface Mount Ceramic Chip Capacitor 0.01 µF / 500V Surface Mount Ceramic Chip Capacitor 10 µF / 63 V Aluminum Electrolytic Axial Lead Capacitor 50 Ohm RG316, O.D. 0.076[1.93] L=11.80[299.72] Flexible Coaxial Cable 4 Turns thru Fair-rite Bead 50 Ohm RG-142B O.D 0.165[4.19] L=11.80[299.72] Flexible Coaxial Cable R.F. Transformer 4:1, 25 Ohm RG316-25, O.D 0.080[2.03] L=5.90[149.86] Flexible Coaxial Cable 2 Turns Thru Fair-rite Multi-aperture Core R.F. Transformer 1:4, 25 Ohm Semi-rigid Coaxial Cable O.D. 0.141[3.58] L=5.90[149.86] Inductor λ 1/4 Wave 50 Ohm O.D. 0.165[4.19] L=11.80[299.72] Flexible Coaxial Cable 2 Turns Thru Fair-rite Bead Shield Bead FB2 2843009902 FB3 2518068007 FB4 2743021447 FB5 2643801002 FB6 2843010402 PCB G0600M1016QA B2 CR2512-1W-471JB RS 2B VENKEL DALE VENKEL DALE T1 6/13 FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP FAIR-RITE CORP ROGERS CORP Multi-aperture Core Multilayer Ferrite Chip Bead (Surface Mount) Surface Mount Emi Shield Bead Shield Bead Multi-aperture Core Woven Glass Reinforced PTFE Microwave Laminate 0.06”, 1oz EDCu, Both sides, εr = 2.55 SD2932 175 MHz Test Circuit Photomaster 175 MHz Text Fixture 7/13 SD2932 TYPICAL BROADBAND DATA (175 - 230 MHz) Input Power vs Frequency Power Gain vs Frequency 18 Gp , POWER GAIN (dB) Pin , INPUT POWER (W) 12 10 8 6 Vdd = 50V Idq = 300 mA Pout = 250W 4 2 160 170 180 190 200 210 220 230 17 16 15 14 13 12 160 240 Vdd = 50V Idq = 300 m A Pout = 25 0W 170 FREQUENCY (MHz) RTL , RETURN LOSS (dB) Nd , DRAIN EFFICIENCY (%) 75 70 65 60 55 50 170 180 190 200 210 220 230 240 220 350 Vdd = 50V Idq = 300 mA 325 300 275 170 180 190 200 210 -2 230 240 Vdd = 50V Idq = 300 m A Pout = 25 0W -4 -6 -8 -10 -12 -14 -16 160 170 180 190 200 210 220 FREQUENCY (MHz) 1 dB Compression Point vs Frequency P1dB , 1dB COMPRESSION (W) 210 0 Vdd = 50V Idq = 300 m A Pout = 25 0W FREQUENCY (MHz) 220 FREQUENCY (MHz) 8/13 200 Return Loss vs Frequency 80 250 160 190 FREQUENCY (MHz) Efficiency vs Frequency 45 160 180 230 240 230 240 SD2932 175 - 230 MHz Circuit Layout (Engineering Fixture) 175 -230 MHz Circuit Layout Component Part List PCB T1 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8 50 Ohm Flexible Coax Cable OD 0.06”, 3” Long. Ferrite Core NEOSIDE T2 / T3 9:1 Transformer, 16.5 Ohm Flexible Coax Cable 0.1”, 3 Long T4 / T5 C1 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.06”, 5” Long 8.2 pF Ceramic Cap C2 / C3 C4 100 pF Chip Cap 2 - 18 pF Chip Cap C5 47 pF Ceramic Cap C6 / C11 C7 47 nF Ceramic Cap 56 pF ATC Chip Cap C8 / C9 / C13 C10 470 pF ATC Chip Cap 100 nF Ceramic Cap C12 2x330 nF / 500 V Cap C14 R1 / R3 10 nF / 63 V Electrolityc Cap 47 Ohm Resistor R2 R4 6.8K Ohm Chip Resistor 4.7K Ohm MultiTurns Trim Resistor R5 8.2K Ohm Resistor R6 D1 3.3K Ohm / 5 W Resistor 6.8 V Zener Diode L1 L2 20 nH Inductor 70 nH Inductor L3 30 nH Inductor L4 L5 10 nH Inductor 15 nH Inductor 9/13 SD2932 TYPICAL BROADBAND DATA (88 - 108 MHz) Input Power vs Frequency Power Gain vs Frequency 22 Gp , POWER GAIN (dB) Pin , INPUT POWER (W) 4 Vdd = 50V Idq = 200 mA Pout = 30 0W 3.5 3 2.5 21 20 19 V dd = 50V I dq = 200 m A P out = 30 0W 18 17 16 85 90 95 100 105 110 85 90 FREQUENCY (MHz) Efficiency vs Frequency RTL , RETURN LOSS (dB) Nd , EFFICIENCY (%) 105 110 0 78 76 74 72 70 68 Vdd = 50V Idq = 200 mA Pout = 30 0W 66 64 62 60 -2 Vd d = 50V Id q = 200 m A Po ut = 30 0W -4 -6 -8 -10 -12 -14 -16 -18 -20 85 90 95 100 105 110 85 90 FREQUENCY (MHz) Vdd = 50V Idq = 200 m A Pout = 30 0W 90 95 100 FREQUENCY (MHz) 100 105 110 105 3rd Harmonic vs Frequency (88 - 108) H3 , 3rd HARMONIC (dBc) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 85 95 FREQUENCY (MHz) 2nd Harmonic vs Frequency (88 - 108 MHz) H2 , 2nd HARMONIC (dBc) 100 Return Loss vs Frequency 80 10/13 95 FREQUENCY (MHz) 110 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 Vdd = 50V Idq = 200 mA Pout = 30 0W 85 90 95 100 FREQUENCY (MHz) 105 110 SD2932 88 - 108 MHz Circuit Layout (Engineering Fixture) 88 -108 MHz Circuit Layout Component Part List PCB T1 1/32” Woven Fiberglass 0.030 Cu, 2 sides, er = 4.8 50 Ohm Flexible Coax Cable OD 0.06”, 5”” Long T2 / T3 9:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 3.9”. Ferrite Core NEOSIDE T4 / T5 T6 4:1 Transformer, 25 Ohm Flexible Coax Cable OD 0.1”, 5” Long 50 Ohm Flexible Coax Cable OD 0.1”, 5” Long FB1 C1 vk200 10 pF Ceramic Cap C2 / C3 / C4 / C7 / C8 1 nF Chip Cap C5 / C6 C9 1 nF ATC chip Cap 470 pF ATC Chip Cap C10 C11 100 nF Chip Cap 100 uF / 63 V Electrolytic Cap R1 56 Ohm Resistor R2 / R4 R3 10 Ohm Chip Resistor 10K Ohm Resistor R5 R6 5.6 Ohm Resistor 10K Ohm, 10 Turn Trim Resistor R7 3.3K Ohm / 5 W Resistor R8 D1 15 Ohm / 1 W Resistor 6.6 V Zener Diode L1 L2 10 nH Inductor 40 nH Inductor L3 70 nH Inductor 11/13 SD2932 12/13 SD2932 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 13/13