BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of unlimited size. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. Features D Miniature T–¾ clear plastic package with lens D Narrow viewing angle ϕ = ± 12° D Insensitive against background light due to nar- 94 8639 row aperture D Suitable for 0.1” (2.54 mm) center to center spacing D Suitable for visible and near infrared radiation D Compatible with IR diode CQY37N Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81516 Rev. 2, 20-May-99 Test Conditions x tp/T = 0.5, tp 10 ms Tamb 55 °C x t x3s Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 32 5 50 100 100 100 –55...+100 260 450 Unit V V mA mA mW °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) BPW17N Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Test Conditions IC = 1 mA Symbol V(BR)CE Min 32 Typ Max Unit V 1 8 1.0 200 nA pF mA O VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm, VCE = 5 V Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 1 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA Turn–On Time VS = 5 V, IC = 5 mA, RL = 100 W Turn–Off Time VS = 5 V, IC = 5 mA, RL = 100 W Cut–Off Frequency VS = 5 V, IC = 5 mA, RL = 100 W ICEO CCEO Ica 0.5 ϕ ±12 825 620...960 lp l0.5 VCEsat 0.3 deg nm nm V ton 4.8 ms toff 5.0 ms fc 120 kHz Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I CEO – Collector Dark Current ( nA ) P tot – Total Power Dissipation ( mW ) 125 100 75 RthJA 50 25 VCE=20V 102 101 100 0 0 94 8308 103 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) 100 20 94 8235 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Collector Dark Current vs. Ambient Temperature Document Number 81516 Rev. 2, 20-May-99 BPW17N C CEO – Collector Emitter Capacitance ( pF ) Vishay Telefunken I ca rel – Relative Collector Current 2.0 1.8 VCE=5V Ee=1mW/cm2 l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 1 0.1 VCE=5V l=950nm 0 0.1 mW / cm2 ) 100 10 Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 VCE=5V RL=100W l=950nm 10 8 6 4 toff 2 ton Ee=1 mW/cm2 1 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 1 10 VCE – Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81516 Rev. 2, 20-May-99 4 8 16 12 IC – Collector Current ( mA ) Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel – Relative Spectral Sensitivity l=950nm 0 94 8238 10 94 8242 1 VCE – Collector Emitter Voltage ( V ) 10 1 Figure 4. Collector Light Current vs. Irradiance Ica – Collector Light Current ( mA ) 4 0 0.1 Ee – Irradiance ( 94 8313 8 t on / t off – Turn on / Turn off Time ( m s ) Ica – Collector Light Current ( mA ) 10 0.001 0.01 12 94 8240 Figure 3. Relative Collector Current vs. Ambient Temperature 0.01 f=1MHz 16 100 Tamb – Ambient Temperature ( °C ) 94 8239 20 1.0 0.8 0.6 0.4 0.2 0 400 100 94 8241 600 800 l – Wavelength ( nm ) 1000 Figure 8. Relative Spectral Sensitivity vs. Wavelength www.vishay.de • FaxBack +1-408-970-5600 3 (5) BPW17N Vishay Telefunken S rel – Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8243 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement 96 12187 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81516 Rev. 2, 20-May-99 BPW17N Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81516 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)