STMICROELECTRONICS SMA540B

SMA540B
Active Biased RF Transistor
PRELIMINARY DATA
• HIGH GAIN LOW NOISE AMPLIFIERS
Gms = 19 dB at 1.8 GHz
• CURRENT EASY ADJUSTABLE BY AN
EXTERNAL RESISTOR
• OPEN COLLECTOR OUTPUT
• TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V
• TRANSITION FREQUENCY 42 GHz
• ULTRA MINIATURE SOT323-4L PACKAGE
(LEAD FREE)
SOT323-4L (SC70)
ORDER CODE
SMA540BTR
BRANDING
TBD
APPLICATIONS
• WIDEBAND APPLICATIONS
• CELLULAR AND CORDLESS TELEPHONES
Bias, 4
C, 3
• HIGH FREQUENCY OSCILLATORS
Bias
DESCRIPTION
The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector
current) can be controlled setting the current at Bias
pin according to IC = 10 * IBIAS. The IBIAS current
is easy adjustable using an external resistor.
SMA540B is housed in ultra miniature SOT323-4L
package(LEAD FREE), the relative dimensions are
1.15mmx1.8mm with 0.8mm thickness.
B, 1
E, 2
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Vceo
Collector emitter voltage
4.5
V
Vebo
Emitter base voltage
1.5
V
Ic
Collector current
40
mA
Ib
Base current
4
mA
IBIAS
BIAS Current
4
mA
Ptot
Total dissipation, Ts = 107
120
mW
Top
Operating temperature
-40 to +85
oC
Tstg
Storage temperature
-65 to +150
oC
Tj
Parameter
oC
Max. operating junction temperature
150
o
C
THERMAL RESISTANCE
Rthjs
January, 15 2003
Thermal Resistance Junction soldering point
< 270
oC/W
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SMA540B
ELECTRICAL CHARACTERISTICS
(TA=25 oC,ZL/S = 50Ω, tested in circuit shown in fig.1, unless otherwise specified )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
(1)
Maximum stable gain
Vd = 2V, Ic = 20mA
f = 1.8GHz
19
dB
2
Insertion power gain
Vd = 2V, Ic = 20mA
f = 1.8GHz
17.5
dB
F50Ω
Noise Figure
Vd = 2V, Ic = 5mA,
Zs = 50Ω
f = 1.8GHz
1.3
dB
P-1dB
Output Power at 1dB
Compression Point
Vd = 2V, Ic = 20mA,
f = 1.8GHz
9
dBm
OIP3
Ouput third order intercept point
Vd = 2V, Ic = 20mA
f = 1.8GHz
19
dBm
CCB
Collector-base capacitance
Vcb = 2V, f = 1MHz
0.13
pF
CR
Current Ratio (Ic/IBias)
IBias = 0.5mA, Vd = 2V
10
Gms
|S21|
Note(1): Gms = | S21 / S12 |
PIN CONNECTION
Pin No.
3
4
Top view
1
2
Description
1
BASE
2
EMITTER
3
COLLECTOR
4
BIAS
SOT343
SOT343
Typical configuration (Fig. 1)
VD
ID
RF Out
RBias
Bias-T
IBias
IC
Bias, 4
C, 3
Bias
B, 1
RF In
N.C.
Bias-T
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E, 2
SMA540B
PACKAGE DIMENSIONS SOT323-4L (SC-70 4 leads)
1.30
1.15-1.35
2.00-2.20
1.15
0.55-0.65
1.90-2.10
1.15-1.35
0.80-1.00
0.25-0.35
0.00-0.10
0.45
0.10-0.20
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SMA540B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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