SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz • ULTRA MINIATURE SOT323-4L PACKAGE (LEAD FREE) SOT323-4L (SC70) ORDER CODE SMA540BTR BRANDING TBD APPLICATIONS • WIDEBAND APPLICATIONS • CELLULAR AND CORDLESS TELEPHONES Bias, 4 C, 3 • HIGH FREQUENCY OSCILLATORS Bias DESCRIPTION The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. SMA540B is housed in ultra miniature SOT323-4L package(LEAD FREE), the relative dimensions are 1.15mmx1.8mm with 0.8mm thickness. B, 1 E, 2 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Vceo Collector emitter voltage 4.5 V Vebo Emitter base voltage 1.5 V Ic Collector current 40 mA Ib Base current 4 mA IBIAS BIAS Current 4 mA Ptot Total dissipation, Ts = 107 120 mW Top Operating temperature -40 to +85 oC Tstg Storage temperature -65 to +150 oC Tj Parameter oC Max. operating junction temperature 150 o C THERMAL RESISTANCE Rthjs January, 15 2003 Thermal Resistance Junction soldering point < 270 oC/W 1/4 SMA540B ELECTRICAL CHARACTERISTICS (TA=25 oC,ZL/S = 50Ω, tested in circuit shown in fig.1, unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Unit (1) Maximum stable gain Vd = 2V, Ic = 20mA f = 1.8GHz 19 dB 2 Insertion power gain Vd = 2V, Ic = 20mA f = 1.8GHz 17.5 dB F50Ω Noise Figure Vd = 2V, Ic = 5mA, Zs = 50Ω f = 1.8GHz 1.3 dB P-1dB Output Power at 1dB Compression Point Vd = 2V, Ic = 20mA, f = 1.8GHz 9 dBm OIP3 Ouput third order intercept point Vd = 2V, Ic = 20mA f = 1.8GHz 19 dBm CCB Collector-base capacitance Vcb = 2V, f = 1MHz 0.13 pF CR Current Ratio (Ic/IBias) IBias = 0.5mA, Vd = 2V 10 Gms |S21| Note(1): Gms = | S21 / S12 | PIN CONNECTION Pin No. 3 4 Top view 1 2 Description 1 BASE 2 EMITTER 3 COLLECTOR 4 BIAS SOT343 SOT343 Typical configuration (Fig. 1) VD ID RF Out RBias Bias-T IBias IC Bias, 4 C, 3 Bias B, 1 RF In N.C. Bias-T 2/4 E, 2 SMA540B PACKAGE DIMENSIONS SOT323-4L (SC-70 4 leads) 1.30 1.15-1.35 2.00-2.20 1.15 0.55-0.65 1.90-2.10 1.15-1.35 0.80-1.00 0.25-0.35 0.00-0.10 0.45 0.10-0.20 3/4 SMA540B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4