. IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Features • Low Noise Figure: NFmin ≈ 1.1dB @ 2.0GHz VCE = 2.0V, I C=5mA • Input IIP3 Capability: ≈ + 10dBm @ 2.0GHz, VCE = 2.5V, IC=10mA • Low Operating Voltage VCE = 1.0 to 2.5V • Package: SOT353 Description The IBM43RF0100 is a Silicon-Germanium (SiGe) NPN transistor designed for high performance, low cost applications. Utilizing IBM’s SiGe process and packaging technologies, high gain, low noise and exceptional linearity at low power consumption are possible. Assembled in a miniature surface mount package, this product is designed for applications requiring high performance such as LNAs, VCOs, and other low noise transistor applications. Pin Diagram Pin Assignments Pin 1 Base Pin 2 Ground1 Pin 3 Emitter Pin 4 Collector Pin 5 Emitter 4 5 3 2 1 sgrf0100.06 06/09/00 1. Connection requires a low resistance path to signal ground. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 1 of 7 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Ordering Information Part Number Description IBM43RF0100 Supplied in Tape and Reel packaging IBM43RF0100EV19 1900MHz evaluation board for IBM43RF0100 IBM43RF0100EV09 900MHz evaluation board for IBM43RF0100 Absolute Maximum Ratings Symbol Parameter Rating Unit Notes 7 V 1 VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage 4.5 V 1 VEBO Emitter to Base Voltage 2.0 V 1 IC Collector Current 75 mA 1 TJ Operating Junction Temperature 140 °C 1 -65 to +150 °C 1 TSTG Storage Temperature 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operatio nal sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 2 of 7 sgrf0100.06 06/09/00 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor DC Electrical Characteristics (TA = +25°C) Symbol Min. Typ. Max. Beta 45 100 165 VA Early Voltage 30 65 VBE Base Emitter Voltage ICC =10µA 755 770 β Parameter Units Notes 1 V 785 mV BVCEO Collector Emitter Breakdown Voltage Base open. 3 3.3 V BV CES Collector Emitter Breakdown Voltage Base shorted. 7 10.5 V BV EBO Emitter Base Breakdown Voltage 3.2 4.0 V 2 BVCBO Collector Base Breakdown Voltage 7 10.5 V 2 BV SO Collector Substrate Breakdown Voltage 30 45.0 V 2 2 1. V CE=2.5V, IC = 5mA 2. IR=10µA AC Characteristics (VCE = 2.0V,ICC = 5mA, Symbol S 21 2 TA = +25°C) Parameter Min. Typ. 900 MHz 16.0 17.5 1900 MHz 11.0 12.5 Max. Units Small Signal Insertion Power Gain dB NF sgrf0100.06 06/09/00 900 MHz 0.9 1.7 1900 MHz 1.1 2.3 Noise Figure ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 3 of 7 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Typical Scattering Parameters (TA=25°C, VCE=2.0V, ICQ=5.0mA) S11 S21 S12 S22 Frequency (GHz) Mag Ang Mag Ang Mag Ang Mag Ang 0.100 0.805 -19.1 14.445 164.2 0.025 77.3 1.008 -15.2 0.200 0.765 -32.8 13.558 155.0 0.036 70.8 0.943 -24.2 0.300 0.725 -46.5 12.671 145.8 0.047 64.3 0.878 -33.2 0.400 0.685 -60.2 11.784 136.6 0.058 57.8 0.813 -42.2 0.500 0.650 -72.7 10.919 128.3 0.067 52.4 0.747 -50.0 1.000 0.522 -119.2 7.309 98.9 0.093 36.8 0.503 -77.4 1.500 0.472 -150.1 5.294 79.5 0.109 30.0 0.368 -95.2 2.000 0.457 -173.3 4.108 64.1 0.123 25.4 0.287 -109.7 2.500 0.461 167.7 3.369 50.5 0.139 21.2 0.233 -125.3 3.000 0.465 151.4 2.842 37.7 0.156 16.0 0.204 -141.0 3.500 0.477 137.4 2.451 25.7 0.176 10.9 0.169 -164.0 4.000 0.488 124.5 2.164 14.3 0.190 3.8 0.198 179.7 4.500 0.499 112.6 1.929 3.0 0.209 -2.8 0.215 157.8 5.000 0.507 101.2 1.740 -8.1 0.229 -9.3 0.259 141.3 Polar Plot of S21 and Smith Chart of S11 & S22 (TA=25°C, VCE=2.0V, ICQ=5.0mA) S11 HBT S22 HBT 0.300 GHz 5.000 GHz S21 HBT 0.300 GHz 5.000 GHz 1 2 0.5 0.2 0 5 0.2 0.5 1 2 5 -0.2 -5 -2 -0.5 -1 -15 -10 -5 0 5 10 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 4 of 7 15 sgrf0100.06 06/09/00 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Typical Noise Parameters (TA=25°C, VCE=2.0V, ICQ=5.0mA) RN NF 50 Ohms (dB) Associated Gain (dB) 0.18 0.9 25.5 43 0.16 1.0 21 0.32 50 0.16 1.0 19 1.1 0.30 93 0.12 1.2 14 2.0 1.1 0.28 101 0.12 1.2 13 2.5 1.3 0.23 127 0.11 1.4 11 3.0 1.4 0.28 157 0.09 1.5 10 4.0 1.6 0.32 -160 0.09 1.7 8 Frequency (GHz) NFmin (dB) Gamma (mag) Gamma (ang) 0.5 0.8 0.35 32 0.8 0.9 0.34 1.0 0.9 1.8 sgrf0100.06 06/09/00 (normalized to 50 ohms) ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 5 of 7 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Recommended PCB Layout 0.8 1.0 1.25 0.5 1.7 All dimensions are millimeters. Recommended Reflow Soldering Footprint - All Leads Separated 0.55 4 3 solder lands solder resist 2.35 2 0.40 0.90 2.10 occupied area 0.50 5 1 solder paste 1.3 2.40 All dimensions are millimeters. ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 6 of 7 2.65 sgrf0100.06 06/09/00 IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor Revision Log Rev Contents of Modification 7/98 Initial release. 8/98 First revision. Refined layout without changing content. 9/98 Second revision. Added Recommended Reflow Soldering Footprint. 11/98 Third revision. Revised scattering and noise parameter data. 04/99 Fourth revision (04). Changed part number IBMSGRF0100 to IBM43RF0100. Distinguished between two evaluation boards in Ordering Information table. Revised low noise figure in Features list. 05/03/99 Fifth revision (05). Corrected VCC value in Features list. Distinguished between 900MHz and 1900MHz frequencies for two parameters in AC Characteristics on page 3. Added Associated Gain column to Typical Noise Parameters on page 5. Added Composition of leads note to Package Diagram: SOT 353 on page 10. 04/27/00 Updated Beta max limit and junction temperature rating. Removed application PCB information. International Business Machines Corporation, 1999 All Rights Reserved Printed in the United States of America July1999 IBM and the IBM logo are trademarks of International Business Machines Corporation in the United States and/or other countries. Other company, product and service names may be trademarks or service marks of others. All information contained in this document is subject to change without notice. The products described in this document are NOT intended for use in implantation or other life support applications where malfunction may result in injury or death to persons. The information containedin this document does not affect or change IBM's product specifications or warranties. Nothing in this document shall operate as an express or implied license or indemnity under the intellectual property rights of IBM or third parties. All information contained in this document was obtained in specific environments, and is presented as an illustration. The results obtained in other operating environments may vary. THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROVIDED ON AN "AS IS" BASIS. In no event will IBM be liable for damages arising directly or indirectly from any use of the information contained in this docu ment. IBM Microelectronics Division 1580 Route 52, Bldg. 504 Hopewell Junction, NY 12533-6351 The IBM home page can be found at http://www.ibm.com ls sgrf0100.06 06/09/00 ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 7 of 7