SO5401 SMALL SIGNAL PNP TRANSISTORS ■ ■ ■ Type Marking SO5401 P33 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CBO Collector-Base Voltage (IE = 0) -160 V V CEO Collector-Emitter Voltage (I B = 0) -150 V V EBO Emitter-Base Voltage (I C = 0) -5 V I CM Collector Peak Current -0.6 A P t ot Total Dissipation at T c = 25 oC 200 mW T stg Storage Temperature Tj Max. O perating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 SO5401 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 620 400 o C/W C/W • Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CBO Collector Cut-off Current (IE = 0) V CB = -120 V -50 nA I EBO Collector Cut-off Current (IC = 0) V EB = -3 V -50 nA V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) I C = -100 µA -160 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -1 mA -150 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 nA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -50 mA IB = -1 mA IB = -5 mA -0.2 -0.5 V V V BE(s at)∗ Collector-Base Saturation Voltage I C = -10 mA I C = -50 mA IB = -1 mA IB = -5 mA -1 -1 V V DC Current G ain I C = -1 mA I C = -10 mA I C = -50 mA 400 MHz 6 pF h FE∗ fT Transition F requency I C = -10 mA V CE = -10V f = 1 MHz C CB Collector Base Capacitance IE = 0 NF Noise Figure V CE = -5 V IC = -0.25 mA ∆f = 200 Hz R G = 1 KΩ h fe ∗ Small Signal Current Gain V CE = -5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 50 60 50 V CE = -5 V VCE = -5 V VCE = -5 V V CE = -10 V IC = -1 mA 240 100 f = 1 MHz 5 f = 1KHz f = 1KHz 40 dB 200 S05401 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 SO5401 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4