STMICROELECTRONICS 2N3019

2N3019
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS
DESCRIPTION
The 2N3019 is a silicon planar epitaxial NPN
transistors in Jedec TO-39 metal case, designed
for high-current, high frequency amplifier
application. It feature high gain and low saturation
voltage.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
7
V
Collector Current
1
A
0.8
5
W
W
IC
P tot
Total Dissipation at T amb ≤ 25 o C
at T case ≤ 25 o C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
November 1997
140
V
80
V
-65 to 200
o
C
200
o
C
1/4
2N3019
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
35
219
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
10
10
nA
µA
10
nA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 90 V
V CB = 90 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
Collector-Base
Breakdown Voltage
(IE = 0)
I C = 100 µA
140
V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
80
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
7
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 150 mA
I C = 500 mA
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 150 mA
I B = 15 mA
DC Current Gain
I C = 0.1 mA
I C = 10 mA
I C = 150 mA
I C = 500 mA
I C = 1A
I C = 150 mA
T amb = -55 o C
VCE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V CE = 10 V
V (BR)CBO
h FE ∗
IB = 15 mA
IB = 50 mA
Small Signal Current
Gain
I C = 1 mA
fT
Transition Frequency
I C = 50 mA
C CBO
Collector Base
Capacitance
IE = 0
VCB = 10 V
C EBO
Emitter Base
Capacitance
IC = 0
V EB = 0.5 V
NF
Noise Figure
I C = 0.1 mA
f = 1KHz
Feedback Time
Constant
I C = 10 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
50
90
100
50
15
0.2
0.5
V
V
1.1
V
300
40
hfe ∗
r bb’ C b’c
2/4
T case = 150 o C
V CE = 5 V
f = 1KHz
V CE = 10 V f = 20MHz
f = 1MHz
f = 1MHz
V CE = 10 V
R g = 1KΩ
V CE = 10 V
f = 4MHz
80
400
100
MHz
12
pF
60
pF
4
dB
400
ps
2N3019
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
G
A
I
E
F
H
B
L
P008B
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2N3019
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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