2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) 7 V Collector Current 1 A 0.8 5 W W IC P tot Total Dissipation at T amb ≤ 25 o C at T case ≤ 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature November 1997 140 V 80 V -65 to 200 o C 200 o C 1/4 2N3019 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 35 219 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 10 10 nA µA 10 nA I CBO Collector Cut-off Current (I E = 0) V CB = 90 V V CB = 90 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V Collector-Base Breakdown Voltage (IE = 0) I C = 100 µA 140 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 80 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA 7 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 150 mA I C = 500 mA V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 150 mA I B = 15 mA DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 1A I C = 150 mA T amb = -55 o C VCE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V (BR)CBO h FE ∗ IB = 15 mA IB = 50 mA Small Signal Current Gain I C = 1 mA fT Transition Frequency I C = 50 mA C CBO Collector Base Capacitance IE = 0 VCB = 10 V C EBO Emitter Base Capacitance IC = 0 V EB = 0.5 V NF Noise Figure I C = 0.1 mA f = 1KHz Feedback Time Constant I C = 10 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 50 90 100 50 15 0.2 0.5 V V 1.1 V 300 40 hfe ∗ r bb’ C b’c 2/4 T case = 150 o C V CE = 5 V f = 1KHz V CE = 10 V f = 20MHz f = 1MHz f = 1MHz V CE = 10 V R g = 1KΩ V CE = 10 V f = 4MHz 80 400 100 MHz 12 pF 60 pF 4 dB 400 ps 2N3019 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N3019 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4