STMICROELECTRONICS BC161

BC161
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC161 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switching application up to 1A.
The complementary NPN type is the BC141.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CBO
Collector-Base Voltage (IE = 0)
Parameter
-60
V
V CEO
Collector-Emitter Voltage (I B = 0)
-60
V
V EBO
Emitter-Base Voltage (I C = 0)
-5
V
IC
Collector Current
-1
A
IB
Base Current
o
P t ot
Total Dissipation at T amb ≤ 45 C
o
at T case ≤ 45 C
T stg
St orage Temperature
Tj
Max. Operating Junction Temperature
November 1997
-0.1
A
0.65
3.7
W
W
-55 to 175
o
C
175
o
C
1/5
BC161
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
35
200
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
Parameter
Collector Cut-off
Current (V BE = 0)
Test Cond ition s
V CE = -60 V
V CE = -60 V
Min.
Typ .
T amb = 150 o C
Max.
Un it
-100
-100
nA
µA
V ( BR)CBO ∗ Collector-Base
Breakdown Voltage
(I E = 0)
I C = -100 µA
-60
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = -10 mA
-60
V
V (BR)EBO ∗ Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -100 µA
-5
V
V CE(sat )∗
I C = -100 mA
I C = -500 mA
I C = -1 A
IB = -10 mA
IB = -50 mA
IB = -100 mA
Collector-Emitter
Saturation Voltage
V BE(on) ∗
Base-Emitter O n
Voltage
I C = -1 A
VCE = -1 V
hFE∗
DC Current G ain
I C = -100 µA
for BC161
for BC161 Gr.
for BC161 Gr.
for BC161 Gr.
I C = -100 mA
for BC161
for BC161 Gr.
for BC161 Gr.
for BC161 Gr.
I C = -1 A
for BC161
for BC161 Gr.
for BC161 Gr.
for BC161 Gr.
V CE = -1 V
6
10
16
Transition F requency
I C = -50 mA
VCE = -10 V
C CBO
Collector Base
Capacitance
IE = 0
V CB = -20 V
C EBO
Emitter Base
Capacitance
IC = 0
V CB = -0.5 V
t on
Turn-on T ime
I C = -100 mA
t of f
Turn-off T ime
I C = -100 mA
fT
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/5
-1
V
V
V
-1
-1.7
V
110
46
80
120
6
10
16
V CE = -1 V
6
10
16
VCE = -1 V
-0.1
-0.35
-0.6
40
40
63
100
140
63
100
160
250
100
160
250
26
15
20
30
f = 1MHz
f = 1MHz
IB1 = -5 mA
IB1 = I B2 = -5 mA
50
MHz
15
30
pF
180
pF
500
ns
650
ns
BC161
Collector-emitter Saturation Voltage.
Base-emitter Voltage.
DC Current Gain.
Transition Frequency.
3/5
BC161
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
A
G
I
E
F
H
B
L
P008B
4/5
BC161
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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