BC161 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC161 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching application up to 1A. The complementary NPN type is the BC141. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) Parameter -60 V V CEO Collector-Emitter Voltage (I B = 0) -60 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC Collector Current -1 A IB Base Current o P t ot Total Dissipation at T amb ≤ 45 C o at T case ≤ 45 C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 -0.1 A 0.65 3.7 W W -55 to 175 o C 175 o C 1/5 BC161 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 35 200 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Collector Cut-off Current (V BE = 0) Test Cond ition s V CE = -60 V V CE = -60 V Min. Typ . T amb = 150 o C Max. Un it -100 -100 nA µA V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = -100 µA -60 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -60 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = -100 µA -5 V V CE(sat )∗ I C = -100 mA I C = -500 mA I C = -1 A IB = -10 mA IB = -50 mA IB = -100 mA Collector-Emitter Saturation Voltage V BE(on) ∗ Base-Emitter O n Voltage I C = -1 A VCE = -1 V hFE∗ DC Current G ain I C = -100 µA for BC161 for BC161 Gr. for BC161 Gr. for BC161 Gr. I C = -100 mA for BC161 for BC161 Gr. for BC161 Gr. for BC161 Gr. I C = -1 A for BC161 for BC161 Gr. for BC161 Gr. for BC161 Gr. V CE = -1 V 6 10 16 Transition F requency I C = -50 mA VCE = -10 V C CBO Collector Base Capacitance IE = 0 V CB = -20 V C EBO Emitter Base Capacitance IC = 0 V CB = -0.5 V t on Turn-on T ime I C = -100 mA t of f Turn-off T ime I C = -100 mA fT ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 -1 V V V -1 -1.7 V 110 46 80 120 6 10 16 V CE = -1 V 6 10 16 VCE = -1 V -0.1 -0.35 -0.6 40 40 63 100 140 63 100 160 250 100 160 250 26 15 20 30 f = 1MHz f = 1MHz IB1 = -5 mA IB1 = I B2 = -5 mA 50 MHz 15 30 pF 180 pF 500 ns 650 ns BC161 Collector-emitter Saturation Voltage. Base-emitter Voltage. DC Current Gain. Transition Frequency. 3/5 BC161 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 BC161 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5