STZTA92 MEDIUM POWER AMPLIFIER ADVANCE DATA ■ ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENT IS STZTA42 2 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -300 V V CEO Collector-Emitter Voltage (I B = 0) -300 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -0.1 A I CM Collector Peak Current -0.3 A P tot Total Dissipation at T c = 25 o C T stg Storage Temperature IC Tj Max. Operating Junction Temperature October 1995 2 W -65 to 150 o C 150 o C 1/4 STZTA92 THERMAL DATA R thj-amb • R thj-tab • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max o 62.5 8 o C/W C/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Test Conditions Min. Typ. Max. Unit -100 nA Collector Cut-off Current (I E = 0) V CB = -200 V Collector-Base Breakdown Voltage (IE = 0) I C = -100 µA -300 V I C = -1 mA -300 V -5 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -20 mA I B = -2 mA -0.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -20 mA I B = -2 mA -0.9 V DC Current Gain I C = -1 mA I C = -10 mA I C = -30 mA Transition Frequency I C = -10 mA V CE = -20 V f = 50 MHz 50 MHz Collector Emitter Capacitance V CE = -20 V f = 1 MHz 50 pF h FE ∗ fT C CEO ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 V CE = -10 V V CE = -10 V V CE = -10 V 25 40 40 STZTA92 SOT223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 3/4 STZTA92 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4