BSS63 SMALL SIGNAL PNP TRANSISTOR ■ ■ ■ ■ Type Marking BSS63 T3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (V BE = 0) -110 V V CEO Collector-Emitter Voltage (I B = 0) -100 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Collector Current Collector Peak Current o P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj March 1996 Max. Operating Junction Temperature -6 V -0.1 A -0.2 A 200 mW -65 to 150 o C 150 o C 1/4 BSS63 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max o 620 500 o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CBO Collector Cut-off Current (IE = 0) V CB = -90 V V CB = -90 V I EBO Emitter Cut-off Current (I C = 0) V EB = -5 V Min. Typ . T j = 150 o C Max. Un it -100 -50 nA µA -200 nA V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA -110 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -100 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -6 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -25 mA I C = -75 mA IB = -2.5 mA IB = -7.5 mA -0.25 -0.9 V V V BE(s at)∗ Emitter-Base Saturation Voltage I C = -25 mA IB = -2.5 mA -0.9 V DC Current G ain I C = -10 mA I C = -25 mA V CE = -1 V V CE = -1 V Transition F requency I C = -25 mA V CE = -5 V f = 100 MHz Collector Base Capacitance I E = 0 mA hFE∗ fT C CB ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 V CB = -10 V f = 1MHz 30 30 50 MHz 3 pF BSS63 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 BSS63 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4