STB60NE06L-16 N - CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE V DSS R DS(on) ID STB60NE06L-16 60 V < 0.16 Ω 60 A ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (VGS = 0) Parameter 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 15 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 60 A ID Drain Current (continuous) at Tc = 100 C o 42 A Drain Current (pulsed) 240 A 150 W Derating Factor 1 W /o C Peak Diode Recovery voltage slope 1 V/ns I DM (•) P tot dv/dt Ts tg Tj o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area May 2000 -65 to 175 o C 175 o C ( 1) ISD ≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STB60NE06L-16 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 1 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) 400 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 60 Unit V T c = 125 oC V GS = ± 15 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 5 V V GS = 10 V I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 1 I D = 30 A ID = 30 A Typ. 1.6 2.5 V 0.014 0.012 0.016 0.014 Ω Ω 60 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =30 A V GS = 0 Min. Typ. Max. Unit 30 S 4150 590 150 pF pF pF STB60NE06L-16 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time V DD = 30 V I D = 30 A R G =4.7 W VGS = 5 V (see test circuit, figure 3) 50 155 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V 55 15 30 70 nC nC nC Typ. Max. Unit I D = 60 A V GS = 5 V ns ns SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. 45 220 280 V DD = 48 V I D = 20 A R G =4.7 Ω V GS = 5 V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A di/dt = 100 A/µs o Tj = 150 C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 60 240 A A 1.5 V 85 ns 300 nC 7 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STB60NE06L-16 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB60NE06L-16 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB60NE06L-16 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB60NE06L-16 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL”A” DETAIL ”A” A1 B2 E B G L2 L L3 P011P6/E 7/8 STB60NE06L-16 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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