STW10NB60 N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH MOSFET TYPE ST W10NB60 ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 1 2 3 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Value Un it Drain-source Voltage (VGS = 0) Parameter 600 V Drain- gate Voltage (R GS = 20 kΩ) 600 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 10 A ID Drain Current (continuous) at Tc = 100 C o 6.2 A Drain Current (pulsed) 40 A T otal Dissipation at Tc = 25 C 160 W Derating Factor 1.28 W /o C Peak Diode Recovery voltage slope 4.5 V/ns I DM (•) P tot dv/dt( 1 ) Ts tg Tj o Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area October 1998 -65 to 150 o C 150 o C ( 1) ISD ≤10A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 STW10NB60 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 0.78 30 0.1 300 C/W oC/W o C/W o C Max Value Unit AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 10 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) 850 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 600 Unit V T c = 100 oC V GS = ± 30 V 1 50 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID =4 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 3 Typ. 4 5 V 0.69 0.8 Ω 10 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 17 A V GS = 0 Min. Typ. 3 6.5 1480 210 25 Max. Unit S 1924 273 33 pF pF pF STW10NB60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on Time Rise Time V DD = 300 V I D = 4.5 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V R G = 4.7 Ω Min. I D =9 A V GS = 10 V V GS = 10 V Typ. Max. Unit 25 11 35 15 ns ns 40 10.5 17.5 56 nC nC nC Typ. Max. Unit 12 10 21 17 14 29 ns ns ns Typ. Max. Unit 10 40 A A 1.6 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 480 V I D = 9 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 10 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 600 ns 5.4 µC 18 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STW10NB60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW10NB60 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW10NB60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW10NB60 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 7/8 STW10NB60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8