STB95NF03 N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB95NF03 30 V <0.007 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ DC-DC & DC-AC CONVERTERS ■ SOLENOID AND RELAY DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 20 V ID(∗) Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 80 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 150 W 1 W/°C Peak Diode Recovery voltage slope 3.0 V/ns Single Pulse Avalanche Energy 720 mJ -55 to 175 °C IDM(•) Ptot Derating Factor dv/dt (1) EAS (2) Tstg Tj Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. (*) Current Limited by Package March 2003 (1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. (2) Starting T j = 25 oC, ID = 47.5A, VDD = 25V 1/9 STB95NF03 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS VGS = 0 Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit 4 V 0.0065 0.0070 Ω Typ. Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 45 A DYNAMIC Symbol 2/9 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 ID =45 A Min. 50 S 2450 880 170 pF pF pF STB95NF03 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Turn-on Time Rise Time VDD = 15 V RG = 4.7 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=95A VGS=10V Min. ID = 47.5 A VGS = 10 V Typ. Max. 20 195 Unit ns ns 59 18 21 70 nC nC nC Typ. Max. Unit SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 20 V RG = 4.7Ω, Min. ID = 47.5 A VGS = 10 V 35 35 ns ns SOURCE DRAIN DIODE(*) Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 95 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 95 A Tj = 150°C VDD = 20 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 60 120 4 Max. Unit 95 320 A A 1.3 V ns nC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•) Pulse width limited by Tjmax Safe Operating Area Thermal Impedance 3/9 STB95NF03 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB95NF03 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/9 STB95NF03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB95NF03 D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 E 8 10 E1 G 0.315 8.5 0.409 0.334 4.88 5.28 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.015 8° 7/9 STB95NF03 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 1.574 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 8/9 inch MIN. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB95NF03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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