STMICROELECTRONICS STP80NF03L-04

STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STB80NF03L-04/-1
STP80NF03L-04
30 V
30 V
<0.004 Ω
<0.004 Ω
80 A
80 A
TYPICAL RDS(on) = 0.0035Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW THRESHOLD DRIVE
3
3
12
1
I2PAK
TO-262
D2PAK
TO-263
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
manufacturing
reproducibility.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Ordering Information
SALES TYPE
STB80NF03L-04
STB80NF03L-04T4
STP80NF03L-04
STB80NF03L-04-1
MARKING
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
VDGR
VGS
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
ID(**)
Drain Current (continuous) at TC = 100°C
ID(**)
IDM(•)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
Peak Diode Recovery voltage slope
dv/dt (1)
EAS (2)
Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
February 2003
.
PACKAGE
D2PAK
D2PAK
TO-220
I2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
30
30
± 20
80
80
320
300
2
2
2.3
-60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
(1) ISD ≤80A, di/dt ≤240A/µs, VDD ≤ 24V, Tj ≤ TJMAX
(2) Starting T j = 25 oC, ID = 40A, VDD = 20V
1/11
STB80NF03L-04/-1/STP80NF03L-04
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
V(BR)DSS
VGS = 0
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
ID = 40 A
ID = 40 A
Min.
Typ.
1
V
0.0035
0.004
0.004
0.0055
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/11
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 15 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 15 A
Min.
50
S
5500
1670
290
pF
pF
pF
STB80NF03L-04/-1/STP80NF03L-04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 40 A
VDD = 15 V
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
30
270
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24V ID =80 A VGS=4.5V
85
23
40
110
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
td(off)
tf
Turn-off Delay Time
Fall Time
ID = 40 A
VDD = 15 V
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
110
95
ns
ns
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
ID = 80 A
Vclamp = 24 V
RG = 4.7Ω
VGS = 4.5 V
(Inductive Load, Figure 5)
125
75
125
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 80 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 80 A
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
75
0.15
4
Max.
Unit
80
320
A
A
1.5
V
ns
µC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/11
STB80NF03L-04/-1/STP80NF03L-04
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11
STB80NF03L-04/-1/STP80NF03L-04
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
5/11
STB80NF03L-04/-1/STP80NF03L-04
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STB80NF03L-04/-1/STP80NF03L-04
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP.
inch.
MAX.
MIN.
TYP.
TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
10.4
0.394
D1
E
8
10
E1
G
0.315
8.5
0.409
0.334
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
8°
0°
R
V2
0.4
0°
0.015
8°
7/11
STB80NF03L-04/-1/STP80NF03L-04
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
8/11
STB80NF03L-04/-1/STP80NF03L-04
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
4.40
TYP.
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
TYP.
1.27
MAX.
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
0.409
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
9/11
STB80NF03L-04/-1/STP80NF03L-04
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
* on sales type
10/11
1.574
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0.795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB80NF03L-04/-1/STP80NF03L-04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
 2002 STMicroelectronics - All Rights Reserved
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11/11