STD16NE06 N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK STripFET POWER MOSFET TYPE STD16NE06 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V < 0.085 Ω 16 A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUG-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS Parameter Value Un it Drain-source Voltage (VGS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 16 A ID o Drain Current (continuous) at Tc = 100 C 11 A Drain Current (pulsed) 64 A 40 W 0.26 W /o C 7 V/ns I DM (•) P tot o T otal Dissipation at Tc = 25 C Derating Factor dv/dt Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area February 2000 -65 to 175 o C 175 o C ( 1) ISD ≤ 16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD16NE06 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 3.75 100 1.5 275 C/W oC/W o C/W o C Max Value Unit AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 16 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) 60 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 60 Unit V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 8 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 2 Typ. 3 4 V 0.07 0.085 Ω 16 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =8 A V GS = 0 Min. Typ. 5 9 900 125 35 Max. Unit S 1200 170 50 pF pF pF STD16NE06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 30 V I D = 10 A R G =4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions 20 45 30 60 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V 25 9.7 6.2 35 nC nC nC Typ. Max. Unit 8 25 38 11 34 50 ns ns ns Typ. Max. Unit 16 64 A A 1.5 V I D = 16 A Min. V GS = 10 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 48 V I D = 10 A R G =4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 16 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A di/dt = 100 A/µs o Tj = 150 C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 50 ns 115 nC 4.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STD16NE06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD16NE06 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD16NE06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD16NE06 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD16NE06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 8/9 STD16NE06 Information furnished is believed to be accurate and reliable. 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