STMICROELECTRONICS STD5NB30

STD5NB30

N - CHANNEL 300V - 0.75 Ω - 5A - DPAK
PowerMESH MOSFET
TYPE
ST D5NB30
■
■
■
■
■
■
V DSS
R DS(on)
ID
300 V
< 0.9 Ω
5 A
TYPICAL RDS(on) = 0.75 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Value
Un it
Drain-source Voltage (VGS = 0)
Parameter
300
V
Drain- gate Voltage (R GS = 20 kΩ)
300
V
± 30
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
5
A
ID
Drain Current (continuous) at Tc = 100 o C
3
A
Drain Current (pulsed)
20
A
I DM (•)
P tot
dv/dt( 1)
Ts tg
Tj
o
T otal Dissipation at Tc = 25 C
55
W
Derating Factor
0.44
W /o C
Peak Diode Recovery voltage slope
5.5
V/ns
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
August 1999
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 5Α, δι/δτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STD5NB30
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
2.27
100
1.5
275
C/W
oC/W
o
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, ID = IAR , V DD = 50 V)
40
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Typ.
Max.
300
V GS = 0
I DSS
Min.
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
ID =2.5 A
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
3
Typ.
4
5
V
0.75
0.9
Ω
5
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/9
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
V GS = 0
Min.
Typ.
2
3.3
Max.
Unit
S
500
100
14
pF
pF
pF
STD5NB30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on)
tr
Turn-on delay Time
Rise Time
V DD = 150 V I D = 3 A
V GS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
13
8
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 250 V
17
7.5
6.5
25
nC
nC
nC
Typ.
Max.
Unit
I D =5 A V GS = 10 V
ns
ns
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
8
15
7
V DD = 240 V I D = 6 A
R G = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
Typ.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 6 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 5)
V GS = 0
Max.
Unit
5
20
A
A
1.6
V
190
ns
1.1
µC
11.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STD5NB30
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD5NB30
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STD5NB30
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD5NB30
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
7/9
STD5NB30
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
=
E
B2
3
B
DETAIL ”A”
L4
0068772-B
8/9
STD5NB30
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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