STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STD2NC70Z STD2NC70Z-1 ■ ■ ■ ■ ■ VDSS RDS(on) ID 700V 700V < 4.7Ω < 4.7Ω 2.3 A 2.3 A TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 3 1 2 1 DPAK IPAK (Add Suffix “T4” for Tape & Reel) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 2.3 A ID Drain Current (continuos) at TC = 100°C 1.45 A Drain Current (pulsed) 9.2 A IDM (● ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Total Dissipation at TC = 25°C 55 W Derating Factor 0.44 W/°C Gate-source Current (DC) ±50 mA Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1.5 KV Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area April 2001 3 V/ns –65 to 150 °C 150 °C (1)ISD ≤2.3A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX 1/10 STD2NC70Z/STD2NC70Z-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.3 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 165 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 700 ID = 1 mA, VGS = 0 Unit V 0.8 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.25 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 3 4 5 V 4.1 4.7 Ω 2.3 A DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 1.25A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 2 S 530 pF 50 pF 7 pF STD2NC70Z/STD2NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 350 V, ID = 1.25 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 14 ns 11 ns VDD = 560V, ID = 2.5A, VGS = 10V 17 24 nC 4 nC 7 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 2.5 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 16 ns 33 ns 40 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 2.3 A ISDM (2) Source-drain Current (pulsed) 9.2 A VSD (1) Forward On Voltage ISD = 2.3 A, VGS = 0 1.6 V ISD = 2.5 A, di/dt = 100A/µs, VDD = 27V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 175 ns 0.6 µC 7.5 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA, VGS = 0 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD2NC70Z/STD2NC70Z-1 Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/10 STD2NC70Z/STD2NC70Z-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STD2NC70Z/STD2NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD2NC70Z/STD2NC70Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 L4 V2 0.8 0.60 0 o 0.398 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/10 STD2NC70Z/STD2NC70Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 8/10 STD2NC70Z/STD2NC70Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. D 1.5 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 0.059 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R W 40 15.7 16.3 1.574 0.618 0.641 * on sales type 9/10 STD2NC70Z/STD2NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10