STMICROELECTRONICS STD2NC70Z

STD2NC70Z
STD2NC70Z-1
N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET
TYPE
STD2NC70Z
STD2NC70Z-1
■
■
■
■
■
VDSS
RDS(on)
ID
700V
700V
< 4.7Ω
< 4.7Ω
2.3 A
2.3 A
TYPICAL RDS(on) = 4.1Ω
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
3
3
1
2
1
DPAK
IPAK
(Add Suffix “T4” for Tape & Reel)
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch
applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
700
V
Drain-gate Voltage (RGS = 20 kΩ)
700
V
Gate- source Voltage
± 25
V
ID
Drain Current (continuos) at TC = 25°C
2.3
A
ID
Drain Current (continuos) at TC = 100°C
1.45
A
Drain Current (pulsed)
9.2
A
IDM (● )
PTOT
IGS
VESD(G-S)
dv/dt (1)
Tstg
Tj
Total Dissipation at TC = 25°C
55
W
Derating Factor
0.44
W/°C
Gate-source Current (DC)
±50
mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
1.5
KV
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
April 2001
3
V/ns
–65 to 150
°C
150
°C
(1)ISD ≤2.3A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX
1/10
STD2NC70Z/STD2NC70Z-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.27
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2.3
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
165
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp.
Coefficient
IDSS
IGSS
Test Conditions
ID = 250 µA, VGS = 0
Min.
Typ.
Max.
700
ID = 1 mA, VGS = 0
Unit
V
0.8
V/°C
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
µA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.25 A
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
Typ.
Max.
Unit
3
4
5
V
4.1
4.7
Ω
2.3
A
DYNAMIC
Symbol
gfs (1)
2/10
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.25A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
2
S
530
pF
50
pF
7
pF
STD2NC70Z/STD2NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
Typ.
Max.
Unit
VDD = 350 V, ID = 1.25 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
14
ns
11
ns
VDD = 560V, ID = 2.5A,
VGS = 10V
17
24
nC
4
nC
7
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 560V, ID = 2.5 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
16
ns
33
ns
40
ns
SOURCE DRAIN DIODE
Symbol
Max.
Unit
Source-drain Current
2.3
A
ISDM (2)
Source-drain Current (pulsed)
9.2
A
VSD (1)
Forward On Voltage
ISD = 2.3 A, VGS = 0
1.6
V
ISD = 2.5 A, di/dt = 100A/µs,
VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)
ISD
Parameter
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Test Conditions
Min.
Typ.
175
ns
0.6
µC
7.5
A
GATE-SOURCE ZENER DIODE
Symbol
BVGSO
Parameter
Test Conditions
Min.
Typ.
25
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
V
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C
Rz
Dynamic Resistance
ID = 50 mA, VGS = 0
90
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/10
STD2NC70Z/STD2NC70Z-1
Safe Operating Area
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/10
STD2NC70Z/STD2NC70Z-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD2NC70Z/STD2NC70Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD2NC70Z/STD2NC70Z-1
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
L4
V2
0.8
0.60
0
o
0.398
0.031
1.00
8
o
0.024
0
o
0.039
0o
P032P_B
7/10
STD2NC70Z/STD2NC70Z-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.094
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
8/10
STD2NC70Z/STD2NC70Z-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
MAX.
D
1.5
0.059 0.063
D1
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
0.059
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
W
40
15.7
16.3
1.574
0.618
0.641
* on sales type
9/10
STD2NC70Z/STD2NC70Z-1
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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